中文版 | English

个人主页

关键词云

成果统计

合作作者[TOP 5]

访问统计


  总访问量
 6548
  访问来源
    内部： 3
    外部： 6545
    国内： 6086
    国外： 462

  年访问量
 2867
  访问来源
    内部： 0
    外部： 2867
    国内： 2753
    国外： 114

  月访问量
 570
  访问来源
    内部： 0
    外部： 570
    国内： 537
    国外： 33

访问量

访问量

1. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [1653]
2. Long lifetime pure organic phosphorescence based on water soluble .. [1405]
3. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [1388]
4. Enhancement of optical properties and donor-related emissions in Y.. [1384]
5. GaAs微尖上碳纳米管的制备 [1373]
6. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [1365]
7. 平板玻璃电真空显示器件的消气方法 (发明) [1324]
8. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1140]
9. Effect of buffer layer thickness and epilayer growth temperature o.. [1099]
10. 带有消气装置的平板玻璃电真空显示器件 (实用新型) [1093]
11. Influence of buffer layer thickness and epilayer's growth temperat.. [1086]
12. 空间遥感用近红外InGaAs焦平面组件_英文_ [1081]
13. Field emission from single diamond particle [1051]
14. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [1042]
15. AlN插入层对a-AlGaN的外延生长的影响(英文) [1024]
16. 气体微水监测方法及装置 (发明) [1022]
17. High performance back-illuminated MIS structure AlGaN solar-blind .. [1006]
18. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [988]
19. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [977]
20. 氮化铝薄膜的硅热扩散掺杂研究(英文) [975]
21. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [958]
22. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [938]
23. 碳纳米管场发射阴极的制备及其场发射特性 [933]
24. Effect of trimethyl-aluminum preflow on the structure and strain p.. [921]
25. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [916]
26. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [913]
27. 初始化生长条件对a-GaN中应变的影响 [899]
28. Enhanced Energy Transfer from ZnO Host to Eu3+ by Mg2+ Doping [895]
29. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [884]
30. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [868]
31. Influence of oxygen on photoluminescence of erbium-implanted silic.. [866]
32. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [861]
33. 一种场发射显示器件中阳极屏的制备方法 (发明) [854]
34. GaN基MIS紫外探测器的电学及光电特性 [847]
35. Influence of thermal annealing duration of buffer layer on the cry.. [833]
36. Growth and optical properties of catalyst-free InP nanowires on Si.. [832]
37. Visualization and investigation of Si-C covalent bonding of single.. [829]
38. Influence of buffer layer thickness and epilayer's growth temperat.. [822]
39. Effect of buffer layer annealing temperature on the crystalline qu.. [804]
40. Valence band offset of GaN/diamond heterojunction measured… [803]
41. Upconversion luminescence, intensity saturation effect, and therma.. [803]
42. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [795]
43. Effect of GaN buffer layers on deposition of AlN films by DC react.. [790]
44. Effect of buffer growth temperature on crystalline quality and opt.. [784]
45. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [776]
46. Effect of distribution of field enhancement factor on field emissi.. [774]
47. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [774]
48. Annealing effect on the bipolar resistive switching characteristic.. [773]
49. 一种制备倒梯形光刻胶截面的方法 (发明) [771]
50. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [766]
51. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [764]
52. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [760]
53. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [756]
54. Effect of interface barrier between carbon nanotube film and subst.. [755]
55. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [754]
56. 俄歇复合对同质结InGaAs探测器探测率的影响 [753]
57. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [750]
58. Influence of threading dislocations on GaN-based metal… [747]
59. Influence of threading dislocations on GaN-based metal-semiconduct.. [746]
60. Short-wavelength light beam in situ monitoring growth of InGaN/GaN.. [746]
61. Improved field emission performance of carbon nanotube by introduc.. [743]
62. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [742]
63. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [740]
64. 新形貌二氧化硅材料的制备及光学性质研究 [737]
65. Effect of buffer layer annealing temperature on the crystalline qu.. [731]
66. Study of AlN films doped by Si thermal diffusion [730]
67. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [726]
68. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [724]
69. 一种选域金刚石膜的制备方法 (发明) [723]
70. Investigation on growth related aspects of catalyst-free InP nanow.. [721]
71. Electrophoretic deposition and field emission properties of patter.. [720]
72. Electrophoresis deposition and field emission characteristics of p.. [714]
73. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [713]
74. Si衬底上InP纳米线的晶体结构和光学性质 [713]
75. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [712]
76. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [704]
77. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [703]
78. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [699]
79. 碳纳米管场发射自旋电子源的制备方法 (发明) [697]
80. Controllable synthesis, growth mechanism and optical properties of.. [693]
81. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [693]
82. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [692]
83. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [691]
84. Growth of diamond on silicon tips [691]
85. 一种生长高铟组分铟镓砷的方法 (发明) [687]
86. An aluminum nitride photoconductor for X-ray detection [685]
87. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [685]
88. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [679]
89. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [677]
90. 铟镓砷红外探测器 (实用新型) [676]
91. 低压化学气相淀积系统用可防止返油的水汽隔离油过滤器 (发明) [674]
92. A study of two-step growth and properties of In0.82Ga0.18As on InP [671]
93. 半导体材料外延的废气中所含砷微粒的回收设备 (发明) [667]
94. Effect of In content of the buffer layer on crystalline quality an.. [667]
95. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [667]
96. 真空镀膜系统中真空室观察窗的转动档板 (实用新型) [662]
97. 电泳和电镀法增强碳纳米管场发射特性的研究 [662]
98. Current-voltage and electron emission characteristics of diamond p.. [662]
99. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [657]
100. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [655]

下载量

1. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [1089]
2. Long lifetime pure organic phosphorescence based on water soluble .. [870]
3. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [838]
4. 空间遥感用近红外InGaAs焦平面组件_英文_ [779]
5. GaAs微尖上碳纳米管的制备 [766]
6. Enhancement of optical properties and donor-related emissions in Y.. [322]
7. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [283]
8. Upconversion luminescence, intensity saturation effect, and therma.. [249]
9. 碳纳米管场发射阴极的制备及其场发射特性 [240]
10. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [223]
11. 氮化铝薄膜的硅热扩散掺杂研究(英文) [220]
12. Improved field emission performance of carbon nanotube by introduc.. [219]
13. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [216]
14. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [214]
15. Effect of buffer growth temperature on crystalline quality and opt.. [206]
16. Growth and optical properties of catalyst-free InP nanowires on Si.. [204]
17. Annealing effect on the bipolar resistive switching characteristic.. [202]
18. AlN插入层对a-AlGaN的外延生长的影响(英文) [200]
19. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [199]
20. Influence of buffer layer thickness and epilayer's growth temperat.. [197]
21. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [197]
22. Influence of threading dislocations on GaN-based metal-semiconduct.. [196]
23. High performance back-illuminated MIS structure AlGaN solar-blind .. [195]
24. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [195]
25. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [192]
26. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [192]
27. 初始化生长条件对a-GaN中应变的影响 [192]
28. Effect of trimethyl-aluminum preflow on the structure and strain p.. [190]
29. GaN基MIS紫外探测器的电学及光电特性 [189]
30. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [189]
31. Electrophoretic deposition and field emission properties of patter.. [188]
32. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [186]
33. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [186]
34. Effect of interface barrier between carbon nanotube film and subst.. [180]
35. Influence of buffer layer thickness and epilayer's growth temperat.. [178]
36. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [178]
37. Investigation on growth related aspects of catalyst-free InP nanow.. [178]
38. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [177]
39. Effect of buffer layer thickness and epilayer growth temperature o.. [176]
40. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [175]
41. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [171]
42. Influence of the growth temperature of AlN nucleation layer on AlN.. [171]
43. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [170]
44. Effect of GaN buffer layers on deposition of AlN films by DC react.. [169]
45. Effect of buffer layer annealing temperature on the crystalline qu.. [166]
46. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [166]
47. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [166]
48. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [163]
49. Modeling of a dynamic dual-input dual-output fast steeringmirror s.. [163]
50. 新形貌二氧化硅材料的制备及光学性质研究 [159]
51. SiC/SiO_2核壳结构纳米线制备及光学性质研究 [159]
52. Reproducible bipolar resistive switching in entire nitride AlN/n-G.. [159]
53. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [158]
54. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [156]
55. Effect of buffer layer annealing temperature on the crystalline qu.. [156]
56. Current-voltage and electron emission characteristics of diamond p.. [156]
57. InGaAs近红外线列焦面阵的研制进展 [155]
58. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [155]
59. 俄歇复合对同质结InGaAs探测器探测率的影响 [154]
60. Field emission from single diamond particle [154]
61. Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nano.. [154]
62. Influence of threading dislocations on GaN-based metal… [153]
63. Targeted delivery system based on magnetic mesoporous silica nanoc.. [153]
64. Valence band offset of GaN/diamond heterojunction measured… [152]
65. Electrophoresis deposition and field emission characteristics of p.. [151]
66. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [150]
67. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [149]
68. Influence of thermal annealing duration of buffer layer on the cry.. [148]
69. n型硅微尖场发射电子能谱的模拟计算 [147]
70. Effect of In content of the buffer layer on crystalline quality an.. [146]
71. In_0_53_Ga_0_47_As红外探测器结构设计与器件性能研究 [145]
72. Visualization and investigation of Si-C covalent bonding of single.. [144]
73. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [144]
74. Controllable synthesis, growth mechanism and optical properties of.. [143]
75. A study of two-step growth and properties of In0.82Ga0.18As on InP [142]
76. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [142]
77. HFCVD法制备SiC材料及室温光致发光 [141]
78. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [141]
79. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [137]
80. Photoluminescence Studies of SiC/SiO2 Aloetic-Shaped Nanowires [136]
81. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [133]
82. In_(0.82)Ga_(0.18)As材料的低温电学性质研究 [131]
83. An aluminum nitride photoconductor for X-ray detection [129]
84. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [129]
85. Growth of diamond on silicon tips [127]
86. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [125]
87. Enhanced performance of dye/QDs cosensitized solar cells via Forst.. [125]
88. 电泳和电镀法增强碳纳米管场发射特性的研究 [124]
89. Less contribution of nonradiative recombination in ZnO nails compa.. [124]
90. Stress-induced in situ epitaxial lateral overgrowth of high-qualit.. [123]
91. Si衬底上InP纳米线的晶体结构和光学性质 [122]
92. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [122]
93. Influence of thermal annealing duration of buffer layer on the cry.. [120]
94. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [119]
95. 单颗粒CVD金刚石的场发射 [117]
96. In situ observation of two-step growth of AlN on sapphire using hi.. [115]
97. Strong ultraviolet and green photoluminescence from SiC/SiO2 core-.. [113]
98. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [112]
99. Na3TbSi3O9·3H2O: A new luminescent microporous terbium(III) .. [110]
100. SiC/SiO2 core-shell nanowires with different shapes: Synthesis and.. [107]