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  总访问量
 3693
  访问来源
    内部： 3
    外部： 3690
    国内： 3342
    国外： 351

  年访问量
 12
  访问来源
    内部： 0
    外部： 12
    国内： 9
    国外： 3

  月访问量
 12
  访问来源
    内部： 0
    外部： 12
    国内： 9
    国外： 3

访问量

访问量

1. Enhancement of optical properties and donor-related emissions in Y.. [1270]
2. 平板玻璃电真空显示器件的消气方法 (发明) [1202]
3. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [1193]
4. 带有消气装置的平板玻璃电真空显示器件 (实用新型) [1061]
5. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [961]
6. Effect of buffer layer thickness and epilayer growth temperature o.. [956]
7. Influence of buffer layer thickness and epilayer's growth temperat.. [938]
8. AlN插入层对a-AlGaN的外延生长的影响(英文) [924]
9. Field emission from single diamond particle [898]
10. 氮化铝薄膜的硅热扩散掺杂研究(英文) [894]
11. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [893]
12. 气体微水监测方法及装置 (发明) [884]
13. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [873]
14. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [860]
15. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [853]
16. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [848]
17. High performance back-illuminated MIS structure AlGaN solar-blind .. [836]
18. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [835]
19. 初始化生长条件对a-GaN中应变的影响 [819]
20. Effect of trimethyl-aluminum preflow on the structure and strain p.. [819]
21. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [805]
22. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [800]
23. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [791]
24. Visualization and investigation of Si-C covalent bonding of single.. [785]
25. Influence of buffer layer thickness and epilayer's growth temperat.. [783]
26. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [774]
27. Growth and optical properties of catalyst-free InP nanowires on Si.. [769]
28. Enhanced Energy Transfer from ZnO Host to Eu3+ by Mg2+ Doping [764]
29. 一种场发射显示器件中阳极屏的制备方法 (发明) [762]
30. Upconversion luminescence, intensity saturation effect, and therma.. [762]
31. GaN基MIS紫外探测器的电学及光电特性 [758]
32. Effect of buffer growth temperature on crystalline quality and opt.. [756]
33. 碳纳米管场发射阴极的制备及其场发射特性 [749]
34. Influence of thermal annealing duration of buffer layer on the cry.. [744]
35. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [737]
36. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [736]
37. Effect of distribution of field enhancement factor on field emissi.. [734]
38. Influence of oxygen on photoluminescence of erbium-implanted silic.. [734]
39. Effect of GaN buffer layers on deposition of AlN films by DC react.. [718]
40. Effect of buffer layer annealing temperature on the crystalline qu.. [715]
41. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [714]
42. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [713]
43. Valence band offset of GaN/diamond heterojunction measured… [706]
44. Effect of interface barrier between carbon nanotube film and subst.. [705]
45. Short-wavelength light beam in situ monitoring growth of InGaN/GaN.. [705]
46. 一种制备倒梯形光刻胶截面的方法 (发明) [700]
47. 一种选域金刚石膜的制备方法 (发明) [693]
48. 新形貌二氧化硅材料的制备及光学性质研究 [691]
49. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [689]
50. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [688]
51. Influence of threading dislocations on GaN-based metal-semiconduct.. [683]
52. GaAs微尖上碳纳米管的制备 [682]
53. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [681]
54. 俄歇复合对同质结InGaAs探测器探测率的影响 [680]
55. Investigation on growth related aspects of catalyst-free InP nanow.. [679]
56. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [678]
57. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [677]
58. Annealing effect on the bipolar resistive switching characteristic.. [677]
59. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [672]
60. Effect of buffer layer annealing temperature on the crystalline qu.. [670]
61. Electrophoretic deposition and field emission properties of patter.. [669]
62. Electrophoresis deposition and field emission characteristics of p.. [669]
63. 碳纳米管场发射自旋电子源的制备方法 (发明) [661]
64. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [657]
65. Long lifetime pure organic phosphorescence based on water soluble .. [655]
66. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [654]
67. Controllable synthesis, growth mechanism and optical properties of.. [652]
68. Influence of threading dislocations on GaN-based metal… [650]
69. Improved field emission performance of carbon nanotube by introduc.. [648]
70. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [646]
71. An aluminum nitride photoconductor for X-ray detection [646]
72. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [646]
73. Growth of diamond on silicon tips [645]
74. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [640]
75. A study of two-step growth and properties of In0.82Ga0.18As on InP [638]
76. 铟镓砷红外探测器 (实用新型) [637]
77. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [636]
78. Study of AlN films doped by Si thermal diffusion [636]
79. 低压化学气相淀积系统用可防止返油的水汽隔离油过滤器 (发明) [635]
80. 半导体材料外延的废气中所含砷微粒的回收设备 (发明) [635]
81. 真空镀膜系统中真空室观察窗的转动档板 (实用新型) [634]
82. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [633]
83. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [632]
84. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [631]
85. Effect of In content of the buffer layer on crystalline quality an.. [630]
86. Si衬底上InP纳米线的晶体结构和光学性质 [629]
87. Aloetic-Shaped SiC Nanowires: Synthesis and Field Electron Emissio.. [629]
88. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [622]
89. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [620]
90. Zinc oxide nanotubes decorated with silver nanoparticles as an ult.. [619]
91. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [617]
92. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [616]
93. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [614]
94. Current-voltage and electron emission characteristics of diamond p.. [611]
95. Targeted delivery system based on magnetic mesoporous silica nanoc.. [610]
96. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [608]
97. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [607]
98. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [606]
99. Improved field emission characteristic of carbon nanotubes by an A.. [605]
100. Influence of thermal annealing duration of buffer layer on the cry.. [600]

下载量

1. Enhancement of optical properties and donor-related emissions in Y.. [304]
2. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [250]
3. Upconversion luminescence, intensity saturation effect, and therma.. [235]
4. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [232]
5. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [206]
6. 氮化铝薄膜的硅热扩散掺杂研究(英文) [203]
7. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [201]
8. Improved field emission performance of carbon nanotube by introduc.. [196]
9. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [195]
10. Effect of buffer growth temperature on crystalline quality and opt.. [194]
11. Growth and optical properties of catalyst-free InP nanowires on Si.. [184]
12. Influence of buffer layer thickness and epilayer's growth temperat.. [182]
13. 初始化生长条件对a-GaN中应变的影响 [181]
14. Annealing effect on the bipolar resistive switching characteristic.. [179]
15. Influence of threading dislocations on GaN-based metal-semiconduct.. [174]
16. AlN插入层对a-AlGaN的外延生长的影响(英文) [173]
17. GaN基MIS紫外探测器的电学及光电特性 [172]
18. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [172]
19. High performance back-illuminated MIS structure AlGaN solar-blind .. [172]
20. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [171]
21. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [168]
22. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [167]
23. Influence of buffer layer thickness and epilayer's growth temperat.. [166]
24. Electrophoretic deposition and field emission properties of patter.. [164]
25. Effect of GaN buffer layers on deposition of AlN films by DC react.. [163]
26. Effect of buffer layer thickness and epilayer growth temperature o.. [162]
27. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [162]
28. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [160]
29. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [159]
30. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [158]
31. Effect of trimethyl-aluminum preflow on the structure and strain p.. [158]
32. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [154]
33. Investigation on growth related aspects of catalyst-free InP nanow.. [154]
34. Effect of interface barrier between carbon nanotube film and subst.. [153]
35. 新形貌二氧化硅材料的制备及光学性质研究 [150]
36. Long lifetime pure organic phosphorescence based on water soluble .. [150]
37. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [150]
38. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [150]
39. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [149]
40. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [149]
41. 碳纳米管场发射阴极的制备及其场发射特性 [144]
42. Influence of the growth temperature of AlN nucleation layer on AlN.. [144]
43. Effect of buffer layer annealing temperature on the crystalline qu.. [142]
44. InGaAs近红外线列焦面阵的研制进展 [141]
45. Targeted delivery system based on magnetic mesoporous silica nanoc.. [140]
46. In_0_53_Ga_0_47_As红外探测器结构设计与器件性能研究 [139]
47. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [138]
48. Modeling of a dynamic dual-input dual-output fast steeringmirror s.. [138]
49. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [137]
50. SiC/SiO_2核壳结构纳米线制备及光学性质研究 [137]
51. Valence band offset of GaN/diamond heterojunction measured… [135]
52. Current-voltage and electron emission characteristics of diamond p.. [134]
53. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [134]
54. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [134]
55. Field emission from single diamond particle [133]
56. Effect of In content of the buffer layer on crystalline quality an.. [131]
57. Electrophoresis deposition and field emission characteristics of p.. [130]
58. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [130]
59. Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nano.. [128]
60. A study of two-step growth and properties of In0.82Ga0.18As on InP [127]
61. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [126]
62. 俄歇复合对同质结InGaAs探测器探测率的影响 [125]
63. In_(0.82)Ga_(0.18)As材料的低温电学性质研究 [125]
64. Effect of buffer layer annealing temperature on the crystalline qu.. [124]
65. Influence of threading dislocations on GaN-based metal… [123]
66. Reproducible bipolar resistive switching in entire nitride AlN/n-G.. [123]
67. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [123]
68. Influence of thermal annealing duration of buffer layer on the cry.. [122]
69. Visualization and investigation of Si-C covalent bonding of single.. [122]
70. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [121]
71. Controllable synthesis, growth mechanism and optical properties of.. [121]
72. Photoluminescence Studies of SiC/SiO2 Aloetic-Shaped Nanowires [119]
73. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [118]
74. An aluminum nitride photoconductor for X-ray detection [118]
75. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [117]
76. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [117]
77. Si衬底上InP纳米线的晶体结构和光学性质 [115]
78. GaAs微尖上碳纳米管的制备 [114]
79. Enhanced performance of dye/QDs cosensitized solar cells via Forst.. [113]
80. n型硅微尖场发射电子能谱的模拟计算 [112]
81. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [112]
82. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [109]
83. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [108]
84. Influence of thermal annealing duration of buffer layer on the cry.. [108]
85. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [108]
86. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [106]
87. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [106]
88. Less contribution of nonradiative recombination in ZnO nails compa.. [104]
89. Strong ultraviolet and green photoluminescence from SiC/SiO2 core-.. [102]
90. SiC/SiO2 core-shell nanowires with different shapes: Synthesis and.. [100]
91. In situ observation of two-step growth of AlN on sapphire using hi.. [100]
92. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [99]
93. Growth of diamond on silicon tips [99]
94. 一种场发射显示器件中阳极屏的制备方法 (发明) [98]
95. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [95]
96. Near-infrared InGaAs FPAs for space applications [94]
97. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [94]
98. Na3TbSi3O9·3H2O: A new luminescent microporous terbium(III) .. [93]
99. Stress-induced in situ epitaxial lateral overgrowth of high-qualit.. [93]
100. 单颗粒CVD金刚石的场发射 [87]