中文版 | English

个人主页

关键词云

成果统计

合作作者[TOP 5]

访问统计


  总访问量
 3990
  访问来源
    内部： 3
    外部： 3987
    国内： 3596
    国外： 394

  年访问量
 309
  访问来源
    内部： 0
    外部： 309
    国内： 263
    国外： 46

  月访问量
 139
  访问来源
    内部： 0
    外部： 139
    国内： 127
    国外： 12

访问量

访问量

1. Enhancement of optical properties and donor-related emissions in Y.. [1312]
2. 平板玻璃电真空显示器件的消气方法 (发明) [1264]
3. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [1230]
4. 带有消气装置的平板玻璃电真空显示器件 (实用新型) [1076]
5. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1039]
6. Effect of buffer layer thickness and epilayer growth temperature o.. [1029]
7. Influence of buffer layer thickness and epilayer's growth temperat.. [1009]
8. Field emission from single diamond particle [971]
9. AlN插入层对a-AlGaN的外延生长的影响(英文) [960]
10. 气体微水监测方法及装置 (发明) [950]
11. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [947]
12. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [934]
13. High performance back-illuminated MIS structure AlGaN solar-blind .. [919]
14. 氮化铝薄膜的硅热扩散掺杂研究(英文) [917]
15. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [902]
16. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [888]
17. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [882]
18. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [854]
19. Effect of trimethyl-aluminum preflow on the structure and strain p.. [846]
20. 初始化生长条件对a-GaN中应变的影响 [838]
21. Enhanced Energy Transfer from ZnO Host to Eu3+ by Mg2+ Doping [833]
22. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [828]
23. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [823]
24. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [820]
25. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [814]
26. Visualization and investigation of Si-C covalent bonding of single.. [808]
27. Influence of buffer layer thickness and epilayer's growth temperat.. [802]
28. Influence of oxygen on photoluminescence of erbium-implanted silic.. [800]
29. Growth and optical properties of catalyst-free InP nanowires on Si.. [799]
30. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [799]
31. 一种场发射显示器件中阳极屏的制备方法 (发明) [787]
32. 碳纳米管场发射阴极的制备及其场发射特性 [786]
33. GaN基MIS紫外探测器的电学及光电特性 [783]
34. Upconversion luminescence, intensity saturation effect, and therma.. [780]
35. Effect of buffer growth temperature on crystalline quality and opt.. [771]
36. Influence of thermal annealing duration of buffer layer on the cry.. [770]
37. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [760]
38. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [754]
39. Effect of distribution of field enhancement factor on field emissi.. [752]
40. Effect of buffer layer annealing temperature on the crystalline qu.. [747]
41. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [741]
42. Effect of GaN buffer layers on deposition of AlN films by DC react.. [741]
43. GaAs微尖上碳纳米管的制备 [741]
44. Valence band offset of GaN/diamond heterojunction measured… [738]
45. Effect of interface barrier between carbon nanotube film and subst.. [726]
46. Short-wavelength light beam in situ monitoring growth of InGaN/GaN.. [726]
47. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [720]
48. 一种制备倒梯形光刻胶截面的方法 (发明) [711]
49. 新形貌二氧化硅材料的制备及光学性质研究 [710]
50. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [709]
51. Annealing effect on the bipolar resistive switching characteristic.. [709]
52. 俄歇复合对同质结InGaAs探测器探测率的影响 [708]
53. Influence of threading dislocations on GaN-based metal-semiconduct.. [706]
54. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [706]
55. 一种选域金刚石膜的制备方法 (发明) [705]
56. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [703]
57. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [703]
58. Long lifetime pure organic phosphorescence based on water soluble .. [703]
59. Investigation on growth related aspects of catalyst-free InP nanow.. [697]
60. Electrophoretic deposition and field emission properties of patter.. [695]
61. Effect of buffer layer annealing temperature on the crystalline qu.. [694]
62. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [693]
63. Electrophoresis deposition and field emission characteristics of p.. [692]
64. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [685]
65. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [681]
66. Improved field emission performance of carbon nanotube by introduc.. [679]
67. 碳纳米管场发射自旋电子源的制备方法 (发明) [678]
68. Influence of threading dislocations on GaN-based metal… [675]
69. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [675]
70. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [674]
71. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [674]
72. Controllable synthesis, growth mechanism and optical properties of.. [673]
73. Study of AlN films doped by Si thermal diffusion [670]
74. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [668]
75. An aluminum nitride photoconductor for X-ray detection [665]
76. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [661]
77. Growth of diamond on silicon tips [661]
78. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [661]
79. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [659]
80. Si衬底上InP纳米线的晶体结构和光学性质 [659]
81. Effect of In content of the buffer layer on crystalline quality an.. [654]
82. A study of two-step growth and properties of In0.82Ga0.18As on InP [653]
83. 铟镓砷红外探测器 (实用新型) [652]
84. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [652]
85. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [650]
86. 半导体材料外延的废气中所含砷微粒的回收设备 (发明) [648]
87. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [647]
88. 真空镀膜系统中真空室观察窗的转动档板 (实用新型) [646]
89. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [645]
90. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [645]
91. 低压化学气相淀积系统用可防止返油的水汽隔离油过滤器 (发明) [644]
92. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [641]
93. Aloetic-Shaped SiC Nanowires: Synthesis and Field Electron Emissio.. [639]
94. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [637]
95. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [637]
96. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [637]
97. Current-voltage and electron emission characteristics of diamond p.. [635]
98. Targeted delivery system based on magnetic mesoporous silica nanoc.. [633]
99. Zinc oxide nanotubes decorated with silver nanoparticles as an ult.. [629]
100. Improved field emission characteristic of carbon nanotubes by an A.. [617]

下载量

1. Enhancement of optical properties and donor-related emissions in Y.. [308]
2. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [293]
3. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [263]
4. Upconversion luminescence, intensity saturation effect, and therma.. [241]
5. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [227]
6. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [214]
7. 氮化铝薄膜的硅热扩散掺杂研究(英文) [211]
8. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [207]
9. Improved field emission performance of carbon nanotube by introduc.. [202]
10. Effect of buffer growth temperature on crystalline quality and opt.. [198]
11. Annealing effect on the bipolar resistive switching characteristic.. [193]
12. Influence of buffer layer thickness and epilayer's growth temperat.. [189]
13. Growth and optical properties of catalyst-free InP nanowires on Si.. [188]
14. AlN插入层对a-AlGaN的外延生长的影响(英文) [187]
15. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [186]
16. Long lifetime pure organic phosphorescence based on water soluble .. [184]
17. Influence of threading dislocations on GaN-based metal-semiconduct.. [183]
18. 初始化生长条件对a-GaN中应变的影响 [183]
19. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [180]
20. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [178]
21. High performance back-illuminated MIS structure AlGaN solar-blind .. [178]
22. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [178]
23. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [177]
24. GaN基MIS紫外探测器的电学及光电特性 [176]
25. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [174]
26. Electrophoretic deposition and field emission properties of patter.. [173]
27. Effect of buffer layer thickness and epilayer growth temperature o.. [171]
28. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [170]
29. Influence of buffer layer thickness and epilayer's growth temperat.. [170]
30. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [169]
31. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [168]
32. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [167]
33. Effect of interface barrier between carbon nanotube film and subst.. [167]
34. Effect of GaN buffer layers on deposition of AlN films by DC react.. [166]
35. Effect of trimethyl-aluminum preflow on the structure and strain p.. [166]
36. Investigation on growth related aspects of catalyst-free InP nanow.. [163]
37. 碳纳米管场发射阴极的制备及其场发射特性 [161]
38. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [159]
39. 新形貌二氧化硅材料的制备及光学性质研究 [156]
40. GaAs微尖上碳纳米管的制备 [156]
41. Influence of the growth temperature of AlN nucleation layer on AlN.. [156]
42. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [154]
43. Effect of buffer layer annealing temperature on the crystalline qu.. [152]
44. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [150]
45. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [150]
46. Modeling of a dynamic dual-input dual-output fast steeringmirror s.. [150]
47. Targeted delivery system based on magnetic mesoporous silica nanoc.. [148]
48. SiC/SiO_2核壳结构纳米线制备及光学性质研究 [148]
49. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [144]
50. Current-voltage and electron emission characteristics of diamond p.. [144]
51. Valence band offset of GaN/diamond heterojunction measured… [143]
52. InGaAs近红外线列焦面阵的研制进展 [143]
53. Effect of buffer layer annealing temperature on the crystalline qu.. [142]
54. Electrophoresis deposition and field emission characteristics of p.. [142]
55. In_0_53_Ga_0_47_As红外探测器结构设计与器件性能研究 [140]
56. Field emission from single diamond particle [140]
57. Effect of In content of the buffer layer on crystalline quality an.. [140]
58. 俄歇复合对同质结InGaAs探测器探测率的影响 [139]
59. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [139]
60. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [138]
61. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [138]
62. Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nano.. [138]
63. Reproducible bipolar resistive switching in entire nitride AlN/n-G.. [136]
64. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [135]
65. Controllable synthesis, growth mechanism and optical properties of.. [135]
66. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [134]
67. Influence of threading dislocations on GaN-based metal… [133]
68. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [132]
69. A study of two-step growth and properties of In0.82Ga0.18As on InP [132]
70. Influence of thermal annealing duration of buffer layer on the cry.. [130]
71. Visualization and investigation of Si-C covalent bonding of single.. [130]
72. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [129]
73. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [128]
74. In_(0.82)Ga_(0.18)As材料的低温电学性质研究 [128]
75. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [126]
76. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [125]
77. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [124]
78. Photoluminescence Studies of SiC/SiO2 Aloetic-Shaped Nanowires [124]
79. An aluminum nitride photoconductor for X-ray detection [122]
80. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [121]
81. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [121]
82. Enhanced performance of dye/QDs cosensitized solar cells via Forst.. [121]
83. n型硅微尖场发射电子能谱的模拟计算 [119]
84. Si衬底上InP纳米线的晶体结构和光学性质 [119]
85. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [113]
86. Less contribution of nonradiative recombination in ZnO nails compa.. [112]
87. Influence of thermal annealing duration of buffer layer on the cry.. [110]
88. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [110]
89. Strong ultraviolet and green photoluminescence from SiC/SiO2 core-.. [110]
90. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [108]
91. Growth of diamond on silicon tips [105]
92. In situ observation of two-step growth of AlN on sapphire using hi.. [105]
93. 一种场发射显示器件中阳极屏的制备方法 (发明) [102]
94. SiC/SiO2 core-shell nanowires with different shapes: Synthesis and.. [102]
95. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [99]
96. Near-infrared InGaAs FPAs for space applications [98]
97. Na3TbSi3O9·3H2O: A new luminescent microporous terbium(III) .. [98]
98. Stress-induced in situ epitaxial lateral overgrowth of high-qualit.. [98]
99. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [97]
100. 单颗粒CVD金刚石的场发射 [96]