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  总访问量
 9517
  访问来源
    内部： 3
    外部： 9514
    国内： 9027
    国外： 490

  年访问量
 2391
  访问来源
    内部： 0
    外部： 2391
    国内： 2371
    国外： 20

  月访问量
 478
  访问来源
    内部： 0
    外部： 478
    国内： 468
    国外： 10

访问量

访问量

1. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [2055]
2. Long lifetime pure organic phosphorescence based on water soluble .. [1835]
3. GaAs微尖上碳纳米管的制备 [1784]
4. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [1760]
5. 空间遥感用近红外InGaAs焦平面组件_英文_ [1469]
6. Enhancement of optical properties and donor-related emissions in Y.. [1406]
7. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [1379]
8. 平板玻璃电真空显示器件的消气方法 (发明) [1336]
9. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1153]
10. Effect of buffer layer thickness and epilayer growth temperature o.. [1114]
11. 带有消气装置的平板玻璃电真空显示器件 (实用新型) [1106]
12. Influence of buffer layer thickness and epilayer's growth temperat.. [1097]
13. Field emission from single diamond particle [1072]
14. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [1062]
15. AlN插入层对a-AlGaN的外延生长的影响(英文) [1049]
16. High performance back-illuminated MIS structure AlGaN solar-blind .. [1045]
17. 气体微水监测方法及装置 (发明) [1032]
18. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1023]
19. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [1004]
20. 氮化铝薄膜的硅热扩散掺杂研究(英文) [987]
21. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [978]
22. 碳纳米管场发射阴极的制备及其场发射特性 [960]
23. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [950]
24. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [945]
25. Effect of trimethyl-aluminum preflow on the structure and strain p.. [941]
26. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [935]
27. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [919]
28. 初始化生长条件对a-GaN中应变的影响 [918]
29. Enhanced Energy Transfer from ZnO Host to Eu3+ by Mg2+ Doping [895]
30. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [890]
31. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [882]
32. GaN基MIS紫外探测器的电学及光电特性 [868]
33. 一种场发射显示器件中阳极屏的制备方法 (发明) [866]
34. Influence of oxygen on photoluminescence of erbium-implanted silic.. [866]
35. Visualization and investigation of Si-C covalent bonding of single.. [849]
36. Effect of buffer layer annealing temperature on the crystalline qu.. [848]
37. Influence of thermal annealing duration of buffer layer on the cry.. [847]
38. Influence of buffer layer thickness and epilayer's growth temperat.. [841]
39. Growth and optical properties of catalyst-free InP nanowires on Si.. [836]
40. Upconversion luminescence, intensity saturation effect, and therma.. [826]
41. Valence band offset of GaN/diamond heterojunction measured… [815]
42. Improved field emission performance of carbon nanotube by introduc.. [814]
43. Effect of buffer growth temperature on crystalline quality and opt.. [801]
44. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [799]
45. Annealing effect on the bipolar resistive switching characteristic.. [799]
46. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [798]
47. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [795]
48. Effect of GaN buffer layers on deposition of AlN films by DC react.. [792]
49. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [788]
50. Effect of distribution of field enhancement factor on field emissi.. [787]
51. Influence of threading dislocations on GaN-based metal-semiconduct.. [776]
52. 一种制备倒梯形光刻胶截面的方法 (发明) [774]
53. 俄歇复合对同质结InGaAs探测器探测率的影响 [770]
54. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [770]
55. Influence of threading dislocations on GaN-based metal… [768]
56. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [768]
57. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [768]
58. Effect of interface barrier between carbon nanotube film and subst.. [767]
59. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [763]
60. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [762]
61. 新形貌二氧化硅材料的制备及光学性质研究 [761]
62. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [755]
63. Effect of buffer layer annealing temperature on the crystalline qu.. [754]
64. Investigation on growth related aspects of catalyst-free InP nanow.. [753]
65. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [750]
66. Short-wavelength light beam in situ monitoring growth of InGaN/GaN.. [746]
67. Electrophoretic deposition and field emission properties of patter.. [742]
68. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [739]
69. Study of AlN films doped by Si thermal diffusion [738]
70. 一种选域金刚石膜的制备方法 (发明) [735]
71. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [728]
72. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [727]
73. Electrophoresis deposition and field emission characteristics of p.. [726]
74. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [726]
75. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [725]
76. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [724]
77. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [724]
78. Si衬底上InP纳米线的晶体结构和光学性质 [716]
79. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [712]
80. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [709]
81. 碳纳米管场发射自旋电子源的制备方法 (发明) [707]
82. Growth of diamond on silicon tips [707]
83. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [706]
84. Controllable synthesis, growth mechanism and optical properties of.. [706]
85. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [705]
86. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [699]
87. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [698]
88. 一种生长高铟组分铟镓砷的方法 (发明) [697]
89. An aluminum nitride photoconductor for X-ray detection [694]
90. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [689]
91. 低压化学气相淀积系统用可防止返油的水汽隔离油过滤器 (发明) [686]
92. 电泳和电镀法增强碳纳米管场发射特性的研究 [685]
93. A study of two-step growth and properties of In0.82Ga0.18As on InP [685]
94. 铟镓砷红外探测器 (实用新型) [677]
95. 半导体材料外延的废气中所含砷微粒的回收设备 (发明) [676]
96. Current-voltage and electron emission characteristics of diamond p.. [674]
97. 真空镀膜系统中真空室观察窗的转动档板 (实用新型) [672]
98. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [669]
99. Effect of In content of the buffer layer on crystalline quality an.. [669]
100. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [666]

下载量

1. Controlled preparation of superparamagnetic Fe3O4@SiO2@ZnO-Au core.. [1491]
2. Long lifetime pure organic phosphorescence based on water soluble .. [1300]
3. Polyol-mediated synthesis of well-dispersed -NaYF4 nanocubes [1210]
4. GaAs微尖上碳纳米管的制备 [1177]
5. 空间遥感用近红外InGaAs焦平面组件_英文_ [1167]
6. Enhancement of optical properties and donor-related emissions in Y.. [344]
7. Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl so.. [297]
8. Improved field emission performance of carbon nanotube by introduc.. [289]
9. Upconversion luminescence, intensity saturation effect, and therma.. [272]
10. 碳纳米管场发射阴极的制备及其场发射特性 [267]
11. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [251]
12. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [243]
13. High performance back-illuminated MIS structure AlGaN solar-blind .. [234]
14. 氮化铝薄膜的硅热扩散掺杂研究(英文) [232]
15. 碳化硅/二氧化硅核壳结构纳米线的制备及场发射特性研究 [230]
16. Annealing effect on the bipolar resistive switching characteristic.. [228]
17. Realization of a High-Performance GaN UV Detector by Nanoplasmonic.. [226]
18. Influence of threading dislocations on GaN-based metal-semiconduct.. [226]
19. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [226]
20. AlN插入层对a-AlGaN的外延生长的影响(英文) [225]
21. Effect of buffer growth temperature on crystalline quality and opt.. [223]
22. Influence of buffer layer thickness and epilayer's growth temperat.. [216]
23. Optimized design of three-dimensional multi-shell Fe3O4/SiO2/ZnO/Z.. [215]
24. Thermal CVD synthesis and photoluminescence of SiC/SiO2 core-shell.. [213]
25. 初始化生长条件对a-GaN中应变的影响 [211]
26. Electrophoretic deposition and field emission properties of patter.. [210]
27. Investigation on growth related aspects of catalyst-free InP nanow.. [210]
28. GaN基MIS紫外探测器的电学及光电特性 [210]
29. Effect of trimethyl-aluminum preflow on the structure and strain p.. [210]
30. Valence band offset of GaN/diamond heterojunction measured by X-ra.. [209]
31. The optimized growth of AlN templates for back-illuminated AlGaN-b.. [209]
32. Growth and optical properties of catalyst-free InP nanowires on Si.. [208]
33. Mechanism of donor-acceptor pair recombination in Mg-doped GaN epi.. [206]
34. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [205]
35. The Influence of n-AlGaN Inserted Layer on the Performance of Back.. [201]
36. Effect of buffer layer annealing temperature on the crystalline qu.. [200]
37. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [198]
38. Synthesis and Photoluminescence of Silica Nanowires Grown on Si Su.. [196]
39. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [194]
40. MOCVD生长InP/GaInAsP DBR结构及相关材料特性 [194]
41. Effect of interface barrier between carbon nanotube film and subst.. [192]
42. Effect of buffer layer thickness and epilayer growth temperature o.. [191]
43. Influence of the growth temperature of AlN nucleation layer on AlN.. [190]
44. Influence of buffer layer thickness and epilayer's growth temperat.. [189]
45. Effect of buffer layer annealing temperature on the crystalline qu.. [189]
46. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [188]
47. SiC/SiO_2核壳结构纳米线制备及光学性质研究 [187]
48. Reproducible bipolar resistive switching in entire nitride AlN/n-G.. [187]
49. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [183]
50. 新形貌二氧化硅材料的制备及光学性质研究 [183]
51. Enhanced spectral response of an AlGaN-based solar-blind ultraviol.. [182]
52. Shift of responsive peak in GaN-based metal-insulator-semiconducto.. [181]
53. Highly luminescent YVO4-Eu3+ nanocrystals coating on wirelike Y(OH.. [180]
54. Field emission from single diamond particle [175]
55. Influence of threading dislocations on GaN-based metal… [174]
56. Modeling of a dynamic dual-input dual-output fast steeringmirror s.. [174]
57. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [172]
58. 俄歇复合对同质结InGaAs探测器探测率的影响 [171]
59. Effect of GaN buffer layers on deposition of AlN films by DC react.. [171]
60. Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nano.. [171]
61. Current-voltage and electron emission characteristics of diamond p.. [168]
62. 非致冷In_(0.53)Ga_(0.47)As/InP红外探测器研究 [168]
63. Synthesis and characterization of aligned ZnO/MgO core-shell nanor.. [167]
64. InGaAs近红外线列焦面阵的研制进展 [166]
65. n型硅微尖场发射电子能谱的模拟计算 [165]
66. Valence band offset of GaN/diamond heterojunction measured… [164]
67. Visualization and investigation of Si-C covalent bonding of single.. [164]
68. Electrophoresis deposition and field emission characteristics of p.. [163]
69. Influence of thermal annealing duration of buffer layer on the cry.. [162]
70. HFCVD法制备SiC材料及室温光致发光 [162]
71. 模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源 [158]
72. Targeted delivery system based on magnetic mesoporous silica nanoc.. [158]
73. 电泳淀积图形化碳纳米管场发射阴极及其场发射特性研究 [157]
74. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [157]
75. A study of two-step growth and properties of In0.82Ga0.18As on InP [156]
76. Controllable synthesis, growth mechanism and optical properties of.. [156]
77. 生长温度对In_(0.53)Ga_(0.47)As/InP的LPMOCVD生长影响 [155]
78. In_0_53_Ga_0_47_As红外探测器结构设计与器件性能研究 [154]
79. MBE生长的垂直堆垛InAs量子点及HFET存储器件的应用 [154]
80. Dynamic modeling of input-output coupled piezoelectric fast steeri.. [151]
81. Effect of In content of the buffer layer on crystalline quality an.. [148]
82. 电泳和电镀法增强碳纳米管场发射特性的研究 [147]
83. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [146]
84. Photoluminescence Studies of SiC/SiO2 Aloetic-Shaped Nanowires [146]
85. Growth of diamond on silicon tips [143]
86. In_(0.82)Ga_(0.18)As材料的低温电学性质研究 [143]
87. An aluminum nitride photoconductor for X-ray detection [138]
88. Enhanced performance of dye/QDs cosensitized solar cells via Forst.. [138]
89. Less contribution of nonradiative recombination in ZnO nails compa.. [137]
90. Stress-induced in situ epitaxial lateral overgrowth of high-qualit.. [133]
91. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with .. [131]
92. 图形化的衬底电极改善碳纳米管的场发射特性 [130]
93. 单颗粒CVD金刚石的场发射 [128]
94. Influence of thermal annealing duration of buffer layer on the cry.. [128]
95. 以碳纳米管阵列为场致发射阴极的X射线源研究 [126]
96. Si衬底上InP纳米线的晶体结构和光学性质 [125]
97. Na3TbSi3O9·3H2O: A new luminescent microporous terbium(III) .. [125]
98. Enhanced efficiency and reduced roll-off in nondoped phosphorescen.. [125]
99. Improve the open-circuit voltage of ZnO solar cells with inserting.. [125]
100. A cell compatible fluorescent chemosensor for Hg2+ based on a nove.. [124]