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Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition
其他题名论文其他题名
Yu S. Z.; Miao G. Q.; Jin Y. X.; Zhang T. M.; Song H.; Jiang H.; Li Z. M.; Li D. B.; Sun X. J.
2009
发表期刊Journal of Alloys and Compounds
ISSN0925-8388
卷号479期号:1—2页码:832-834
摘要Catalyst-free InP nanowires were grown on Si (10 0) substrates by metal organic chemical vapor deposition. In this method, in situ deposited In droplets are seeds of the InP nanowires growth. In order to control the growth of epitaxial InP nanowires, a detailed investigation on the growth related aspects such as the In droplets deposition time, growth temperature, and V/III ratio has been made. The experimental results indicate that the diameter, shape, and length of the nanowires can be controlled by growth conditions. (c) 2009 Elsevier B.V. All rights reserved.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26322
专题中科院长春光机所知识产出
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Yu S. Z.,Miao G. Q.,Jin Y. X.,et al. Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition[J]. Journal of Alloys and Compounds,2009,479(1—2):832-834.
APA Yu S. Z..,Miao G. Q..,Jin Y. X..,Zhang T. M..,Song H..,...&Sun X. J..(2009).Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition.Journal of Alloys and Compounds,479(1—2),832-834.
MLA Yu S. Z.,et al."Investigation on growth related aspects of catalyst-free InP nanowires grown by metal organic chemical vapor deposition".Journal of Alloys and Compounds 479.1—2(2009):832-834.
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