Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD

	Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD
	Sun X. J.; Li D. B.; Song H.; Chen Y. R.; Jiang H.; Miao G. Q.; Li Z. M.
	2012
发表期刊	Nanoscale Research Letters
ISSN	1931-7573
卷号	7
摘要	In this paper, five-period InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) were grown by metal organic chemical vapor deposition with 405-nm light beam in situ monitoring system. Based on the signal of 405-nm in situ monitoring system, the related information of growth rate, indium composition and interfacial quality of each InGaN/GaN QW were obtained, and thus, the growth conditions and structural parameters were optimized to grow high-quality InGaN/GaN green LED structure. Finally, a green LED with a wavelength of 509 nm was fabricated under the optimal parameters, which was also proved by ex situ characterization such as high-resolution X-ray diffraction, photoluminescence, and electroluminescence. The results demonstrated that short-wavelength in situ monitoring system was a quick and non-destroyed tool to provide the growth information on InGaN/GaN, which would accelerate the research and development of GaN-based green LEDs.
收录类别	SCI ; EI
语种	英语
WOS记录号	BMC:10.1186/1556-276X-7-282
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34343
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun X. J.,Li D. B.,Song H.,et al. Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD[J]. Nanoscale Research Letters,2012,7.
APA	Sun X. J..,Li D. B..,Song H..,Chen Y. R..,Jiang H..,...&Li Z. M..(2012).Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD.Nanoscale Research Letters,7.
MLA	Sun X. J.,et al."Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD".Nanoscale Research Letters 7(2012).