Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD

	Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
其他题名	论文其他题名
	Yu S. Z.; Miao G. Q.; Xie J. C.; Jin Y. X.; Zhang T. M.; Song H.; Jiang H.; Li Z. M.
	2008
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	466 期号:1—2 页码:507-511
摘要	InAs0.9Sb0.1 epilayers are grown on GaAs (001) substrates by metal organic chemical vapor deposition (MOCVD). In order to relax compressive strain caused by lattice mismatch between InAs0.9Sb0.1 and GaAs, we employ a two-step growth method in which low temperature (430 degrees C) InAs0.9Sb0.1 buffer layers with different thicknesses are introduced into the structure. Effect of the buffer layer thickness and the epdayer's growth temperature on crystalline quality of the epilayer is investigated, respectively. It is clear that there are strip pyramids paralleling with each other on most surface of the samples. The crystalline quality gets well obviously when the buffer layer thickness change from 0 to 50 nm, but it gets worse when the buffer layer thickness increases to 100 nm. It is also shown that the crystalline quality of the epilayer is improved obviously when the epilayer is grown at 500 degrees C, and it gets worse when the growth temperature decreases or increases. (C) 2007 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26448
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Yu S. Z.,Miao G. Q.,Xie J. C.,et al. Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD[J]. Journal of Alloys and Compounds,2008,466(1—2):507-511.
APA	Yu S. Z..,Miao G. Q..,Xie J. C..,Jin Y. X..,Zhang T. M..,...&Li Z. M..(2008).Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD.Journal of Alloys and Compounds,466(1—2),507-511.
MLA	Yu S. Z.,et al."Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD".Journal of Alloys and Compounds 466.1—2(2008):507-511.

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