Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD

	Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
其他题名	论文其他题名
	Liu X.; Song H.; Miao G. Q.; Jiang H.; Cao L. Z.; Li D. B.; Sun X. J.; Chen Y. R.
	2011
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	257 期号:6 页码:1996-1999
摘要	In0.82Ga0.18As epilayers were grown on InP substrates using a two-step growth technique by LP-MOCVD. A homogeneous low-temperature (450 degrees C) In0.82Ga0.18As buffer layer was introduced to improve the crystalline quality of epilayers. The influence of low-temperature buffer layer deposition condition, such as thermal annealing duration, on the crystalline quality of the In0.82Ga0.18As epilayer was investigated. Double-crystal X-ray diffraction measurement, Hall measurement, and Raman scattering spectrum were used to evaluate the In0.82Ga0.18As epilayers. Atomic force microscope was used to study the surface morphology. It is found that the In0.82Ga0.18As epilayer, with buffer layer thermal annealing for 5 min, exhibits the best crystalline quality. The change of the surface morphology of the buffer layer after thermal annealing treatment was suggested to explain the phenomenon. (C) 2010 Elsevier B. V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26073
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu X.,Song H.,Miao G. Q.,et al. Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD[J]. Applied Surface Science,2011,257(6):1996-1999.
APA	Liu X..,Song H..,Miao G. Q..,Jiang H..,Cao L. Z..,...&Chen Y. R..(2011).Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD.Applied Surface Science,257(6),1996-1999.
MLA	Liu X.,et al."Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD".Applied Surface Science 257.6(2011):1996-1999.

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