Changchun Institute of Optics,Fine Mechanics and Physics,CAS
Deposition of AlN films on nitrided sapphire substrates by reactive DC magnetron sputtering | |
Wang X.-J.; Song H.; Li D.-B.; Jiang H.; Li Z.-M.; Miao G.-Q.; Sun X.-J.; Chen Y.-R.; Jia H. | |
2012 | |
发表期刊 | Faguang Xuebao/Chinese Journal of Luminescence |
ISSN | 10007032 |
卷号 | 33期号:2页码:227-232 |
摘要 | Aluminum nitride (AlN) films were prepared successfully on sapphire and nitrided sapphire substrates by reactive DC magnetron sputtering. The effect of nitridation of sapphire substrate on the growth of AlN films was studied. The films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and optical absorption spectrum. XRD patterns of A1N films exhibited a strong preferential c-axis orientation, and nitridation of sapphire substrate could improve the crystal quality of AlN films and also decrease the residual stress of films. But AFM results revealed that the grain size distribution of films deposited on nitrided sapphire substrates was not more homogenous than that of films deposited on sapphire substrates, and optical absorption results also showed nitridation of sapphire substrate nearly had no effect on the optical behavior of AlN films. |
收录类别 | EI |
文献类型 | 期刊论文 |
条目标识符 | http://ir.ciomp.ac.cn/handle/181722/34577 |
专题 | 中科院长春光机所知识产出 |
推荐引用方式 GB/T 7714 | Wang X.-J.,Song H.,Li D.-B.,et al. Deposition of AlN films on nitrided sapphire substrates by reactive DC magnetron sputtering[J]. Faguang Xuebao/Chinese Journal of Luminescence,2012,33(2):227-232. |
APA | Wang X.-J..,Song H..,Li D.-B..,Jiang H..,Li Z.-M..,...&Jia H..(2012).Deposition of AlN films on nitrided sapphire substrates by reactive DC magnetron sputtering.Faguang Xuebao/Chinese Journal of Luminescence,33(2),227-232. |
MLA | Wang X.-J.,et al."Deposition of AlN films on nitrided sapphire substrates by reactive DC magnetron sputtering".Faguang Xuebao/Chinese Journal of Luminescence 33.2(2012):227-232. |
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