Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors

	Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors
其他题名	论文其他题名
	Li D. B.; Sun X. J.; Song H.; Li Z. M.; Chen Y. R.; Miao G. Q.; Jiang H.
	2011
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	98 期号:1
摘要	The influence of threading dislocations on the properties of GaN-based metal-semiconductor-metal (MSM) ultraviolet photodetectors was investigated. It was found that screw dislocations had a strong influence on the dark current of the photodetectors, while edge dislocations had the predominant effect on their responsivity. The dark current increased as the screw dislocation density increased due to their lowering of the Schottky barrier height. However, the responsivity of the photodetectors decreased with increasing edge dislocation density because of the dangling bonds along those edge dislocation lines which enhance the recombination of photogenerated electron-hole pairs. The results suggest that reducing both the screw and edge dislocation densities is an effective way to improve the photoelectric property of GaN-based MSM ultraviolet photodetectors. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3536480]
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26053
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li D. B.,Sun X. J.,Song H.,et al. Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors[J]. Applied Physics Letters,2011,98(1).
APA	Li D. B..,Sun X. J..,Song H..,Li Z. M..,Chen Y. R..,...&Jiang H..(2011).Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors.Applied Physics Letters,98(1).
MLA	Li D. B.,et al."Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors".Applied Physics Letters 98.1(2011).

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