Effect of AlN interlayer on a-plane AlGaN grown by MOCVD

	Effect of AlN interlayer on a-plane AlGaN grown by MOCVD
	Jia H.; Chen Y.-R.; Sun X.-J.; Li D.-B.; Song H.; Jiang H.; Miao G.-Q.; Li Z.-M.
	2012
发表期刊	Faguang Xuebao/Chinese Journal of Luminescence
ISSN	10007032
卷号	33 期号:5 页码:519-524
摘要	The effect of AlN interlayer on strain states and its effect on optical properties of a-AlGaN epilayers grown by using metal organic chemical vapor deposition (MOCVD) method are investigated. The strain is characterized by the frequency shift based on Raman spectroscopy measurement. The results show that residual strain in a-AlGaN grown on the AlN interlayer is relaxed due to AlN interlayer act as a stable and compliant substrate induced weakening of mechanical strength. Accordingly, the near band edge emission (NBE) peak shows red shift in room temperature photoluminescence measurement. In addition, the introduction of AlN interlayer lead to the red shift of NBE photo-luminescence peaks, which can be contribute to the strain determined by Raman spectra.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34595
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Jia H.,Chen Y.-R.,Sun X.-J.,et al. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD[J]. Faguang Xuebao/Chinese Journal of Luminescence,2012,33(5):519-524.
APA	Jia H..,Chen Y.-R..,Sun X.-J..,Li D.-B..,Song H..,...&Li Z.-M..(2012).Effect of AlN interlayer on a-plane AlGaN grown by MOCVD.Faguang Xuebao/Chinese Journal of Luminescence,33(5),519-524.
MLA	Jia H.,et al."Effect of AlN interlayer on a-plane AlGaN grown by MOCVD".Faguang Xuebao/Chinese Journal of Luminescence 33.5(2012):519-524.

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