Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors

	Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors
其他题名	论文其他题名
	You K.; Jiang H.; Li D. B.; Sun X. J.; Song H.; Chen Y. R.; Li Z. M.; Miao G. Q.; Liu H. B.
	2012
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	100 期号:12
摘要	A gallium nitride (GaN)-based metal-insulator-semiconductor (MIS) ultraviolet photodetector (PD) was fabricated on a sapphire substrate. It was found that the responsive peak of the GaN-based MIS PD redshifted with increasing negative bias, which has not been reported before. Also, the shift of the responsive peak has been interpreted in terms of the tunneling procedure of the photo-generated holes assisted by defects in the interfaces between the GaN layers and the SiNx layers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3696025]
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/24695
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	You K.,Jiang H.,Li D. B.,et al. Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors[J]. Applied Physics Letters,2012,100(12).
APA	You K..,Jiang H..,Li D. B..,Sun X. J..,Song H..,...&Liu H. B..(2012).Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors.Applied Physics Letters,100(12).
MLA	You K.,et al."Shift of responsive peak in GaN-based metal-insulator-semiconductor photodetectors".Applied Physics Letters 100.12(2012).

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