The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors

doi:10.1002/pssa.201700358

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	The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors
	Chen, Y. R.; Zhang, Z. W.; Li, Z. M.; Jiang, H.; Miao, G. Q.; Song, H.
	2018
发表期刊	Physica Status Solidi a-Applications and Materials Science
ISSN	1862-6300
卷号	215 期号:2 页码:5
摘要	In this paper, comparison between back-illuminated p-i-n AlGaN-based ultraviolet photodetectors (UV-PDs) with and without an n-AlGaN inserted layer is carried out. The results show that the introduction of n-AlGaN interlayer significantly reduces the dark current of AlGaN-based UV-PDs. The mechanism involved is clarified and can be attributed to the role of n-AlGaN interlayer which depletes to isolate the leakage paths generated by dislocations of AlGaN material. Besides, it also greatly improves the spectral performances of the p-i-n AlGaN-based UV-PDs, which can be related to the additional built-in electric fields introduced by n-AlGaN inserted layer that contribute to separate and transport the photon-generated carriers.
关键词	AlGaN inserted layers p-i-n structures ultraviolet photodetectors suppression diodes Materials Science Physics
DOI	10.1002/pssa.201700358
收录类别	SCI ; EI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/61183
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Chen, Y. R.,Zhang, Z. W.,Li, Z. M.,et al. The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors[J]. Physica Status Solidi a-Applications and Materials Science,2018,215(2):5.
APA	Chen, Y. R.,Zhang, Z. W.,Li, Z. M.,Jiang, H.,Miao, G. Q.,&Song, H..(2018).The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors.Physica Status Solidi a-Applications and Materials Science,215(2),5.
MLA	Chen, Y. R.,et al."The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors".Physica Status Solidi a-Applications and Materials Science 215.2(2018):5.

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