Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism

	Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism
	Chen Y. R.; Song H.; Jiang H.; Li Z. M.; Zhang Z. W.; Sun X. J.; Li D. B.; Miao G. Q.
	2014
发表期刊	Applied Physics Letters
ISSN	ISBN/0003-6951
卷号	105 期号:19 页码:5
摘要	Reproducible bipolar resistive switching characteristics are demonstrated in entire nitride AlN/n-GaN metal-insulator-semiconductor devices. The mechanism involved confirms to trap-controlled space charge limited current theory and can be attributed to the nitrogen vacancies of AlN serving as electron traps that form/rupture electron transport channel by trapping/detrapping electrons. This study will lead to the development of in-situ growth of group-III nitrides by metal-organic chemical vapor deposition as a candidate for next-generation nonvolatile memory device. Moreover, it will be benefit to structure monolithic integrated one-transistor-one-resistor memory with nitride high electron mobility transistors. (C) 2014 AIP Publishing LLC.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44332
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chen Y. R.,Song H.,Jiang H.,et al. Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism[J]. Applied Physics Letters,2014,105(19):5.
APA	Chen Y. R..,Song H..,Jiang H..,Li Z. M..,Zhang Z. W..,...&Miao G. Q..(2014).Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism.Applied Physics Letters,105(19),5.
MLA	Chen Y. R.,et al."Reproducible bipolar resistive switching in entire nitride AlN/n-GaN metal-insulator-semiconductor device and its mechanism".Applied Physics Letters 105.19(2014):5.

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