Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD

	Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD
其他题名	论文其他题名
	Zhang T.; Miao G. Q.; Jin Y. X.; Jiang H.; Li Z. M.; Song H.
	2008
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	458 期号:1—2 页码:363-365
摘要	In0.82Ga0.18As epilayers were grown by LP-MOCVD on InP (100) substrates with two-step growth method. It was analyzed that growth temperature of buffer layer exerted an influence on its crystalline quality and optical property, which were characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence. The experiments showed that the crystalline quality and the optical property of the In0.82Ga0.18As epilayers had close relation to the growth temperature of buffer layer and the. optimum buffer's growth temperature was about 450 degrees C. (c) 2007 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26449
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang T.,Miao G. Q.,Jin Y. X.,et al. Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD[J]. Journal of Alloys and Compounds,2008,458(1—2):363-365.
APA	Zhang T.,Miao G. Q.,Jin Y. X.,Jiang H.,Li Z. M.,&Song H..(2008).Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD.Journal of Alloys and Compounds,458(1—2),363-365.
MLA	Zhang T.,et al."Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD".Journal of Alloys and Compounds 458.1—2(2008):363-365.

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