Study of AlN films doped by Si thermal diffusion

	Study of AlN films doped by Si thermal diffusion
	Wang X.-J.; Song H.; Li D.-B.; Jiang H.; Li Z.-M.; Miao G.-Q.; Chen Y.-R.; Sun X.-J.
	2012
发表期刊	Faguang Xuebao/Chinese Journal of Luminescence
ISSN	10007032
卷号	33 期号:7 页码:768-773
摘要	This paper deals with the characteristics of aluminium nitride (AlN) films doped by silicon (Si) thermal diffusion. The films are analyzed by energy dispersive X-ray spectroscopy (EDS) and high-temperature dependent electrical conductivity. The results of EDS show that the Si element is successfully doped into the AlN films using SiNx as the diffusion source at the temperature of 1250C. The high-temperature current-voltage (I-V) measurements show that the electrical properties of the AlN films can be prominently improved by Si thermal diffusion, and at the measured temperature of 460C their electrical conductivities increase from 1.910-3 S·m-1 to 2.110-2 S·m-1 after the Si thermal diffusion. The high-temperature dependence of thermal conductivity suggests that the activation energies of VN3+ and Si are about 1.03 eV and 0.45 eV, respectively.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34601
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X.-J.,Song H.,Li D.-B.,et al. Study of AlN films doped by Si thermal diffusion[J]. Faguang Xuebao/Chinese Journal of Luminescence,2012,33(7):768-773.
APA	Wang X.-J..,Song H..,Li D.-B..,Jiang H..,Li Z.-M..,...&Sun X.-J..(2012).Study of AlN films doped by Si thermal diffusion.Faguang Xuebao/Chinese Journal of Luminescence,33(7),768-773.
MLA	Wang X.-J.,et al."Study of AlN films doped by Si thermal diffusion".Faguang Xuebao/Chinese Journal of Luminescence 33.7(2012):768-773.

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