A study of two-step growth and properties of In0.82Ga0.18As on InP

	A study of two-step growth and properties of In0.82Ga0.18As on InP
其他题名	论文其他题名
	Zhang T. M.; Miao G. G.; Jin Y. X.; Yu S. Z.; Jiang H.; Li Z. M.; Song H.
	2009
发表期刊	Materials Science in Semiconductor Processing
ISSN	1369-8001
卷号	12 期号:4—5 页码:156-160
摘要	In0.82Ga0.As-18 was grown by LP-MOCVD on InP substrates with the two-step growth technique. It was analyzed that epilayer's growth temperature affected on the crystalline quality, surface morphology, carrier concentration, and mobility of the In0.82Ga0.As-18, which was characterized by X-ray diffraction, scanning electron microscopy, and Hall measurements. The evaluation of stress in In0.82Ga0.As-18 was made from frequency shift of the GaAs-like LO phonon of the Raman spectrum. (C) 2009 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26300
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang T. M.,Miao G. G.,Jin Y. X.,et al. A study of two-step growth and properties of In0.82Ga0.18As on InP[J]. Materials Science in Semiconductor Processing,2009,12(4—5):156-160.
APA	Zhang T. M..,Miao G. G..,Jin Y. X..,Yu S. Z..,Jiang H..,...&Song H..(2009).A study of two-step growth and properties of In0.82Ga0.18As on InP.Materials Science in Semiconductor Processing,12(4—5),156-160.
MLA	Zhang T. M.,et al."A study of two-step growth and properties of In0.82Ga0.18As on InP".Materials Science in Semiconductor Processing 12.4—5(2009):156-160.

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