Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy

	Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy
其他题名	论文其他题名
	Shi K.; Liu X. L.; Li D. B.; Wang J.; Song H. P.; Xu X. Q.; Wei H. Y.; Jiao C. M.; Yang S. Y.; Song H.; Zhu Q. S.; Wang Z. G.
	2011
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	257 期号:18 页码:8110-8112
摘要	XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38 +/- 0.15 eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43 +/- 0.15 eV was obtained. (C) 2011 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26034
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Shi K.,Liu X. L.,Li D. B.,et al. Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy[J]. Applied Surface Science,2011,257(18):8110-8112.
APA	Shi K..,Liu X. L..,Li D. B..,Wang J..,Song H. P..,...&Wang Z. G..(2011).Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy.Applied Surface Science,257(18),8110-8112.
MLA	Shi K.,et al."Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy".Applied Surface Science 257.18(2011):8110-8112.