Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface

	Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface
其他题名	论文其他题名
	Sun X. J.; Li D. B.; Jiang H.; Li Z. M.; Song H.; Chen Y. R.; Miao G. Q.
	2011
发表期刊	Applied Physics Letters
ISSN	0003-6951
卷号	98 期号:12
摘要	GaN metal-semiconductor-metal (MSM) ultraviolet detectors were investigated by depositing different density of SiO2 nanoparticles (SNPs) on the GaN. It was shown that the dark current of the detectors with SNPs was more than one order of magnitude lower than that without SNPs and the peak responsivity was enhanced after deposition of the SNPs. Atomic force microscopy observations indicated that the SNPs usually formed at the termination of screw and mixed dislocations, and further current-voltage measurements showed that the leakage of the Schottky contact for the GaN MSM detector decreased with deposited the SNPs. Moreover, the leakage obeyed the Frenkel-Poole emission model, which meant that the mechanism for improving the performance is the SNPs passivation of the dislocations followed by the reduction in the dark current. (C) 2011 American Institute of Physics. [doi:10.1063/1.3567943]
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26082
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Sun X. J.,Li D. B.,Jiang H.,et al. Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface[J]. Applied Physics Letters,2011,98(12).
APA	Sun X. J..,Li D. B..,Jiang H..,Li Z. M..,Song H..,...&Miao G. Q..(2011).Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface.Applied Physics Letters,98(12).
MLA	Sun X. J.,et al."Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface".Applied Physics Letters 98.12(2011).

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