Effect of asymmetric schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector

	Effect of asymmetric schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector
	Li DB(黎大兵); Sun XJ(孙晓娟); Song H(宋航); Li ZM(李志明); Jiang H(蒋红); Chen YR(陈一仁); Mou GQ(缪国庆)
	2011-10-10
发表期刊	Applied physics letters
期号	26 页码:000000-1
收录类别	SCI ; EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/4053
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li DB,Sun XJ,Song H,et al. Effect of asymmetric schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector[J]. Applied physics letters,2011(26):000000-1.
APA	Li DB.,Sun XJ.,Song H.,Li ZM.,Jiang H.,...&Mou GQ.(2011).Effect of asymmetric schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector.Applied physics letters(26),000000-1.
MLA	Li DB,et al."Effect of asymmetric schottky barrier on GaN-based metal-semiconductor-metal ultraviolet detector".Applied physics letters .26(2011):000000-1.