Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN

	Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN
	Liu X. T.; Li D. B.; Sun X. J.; Li Z. M.; Song H.; Jiang H.; Chen Y. R.
	2014
发表期刊	Crystengcomm
ISSN	ISBN/1466-8033
卷号	16 期号:34 页码:8058-8063
摘要	We proposed a method, i.e., stress-induced in situ epitaxial lateral overgrowth (ELO), for growing high-quality GaN heteroepilayers, and demonstrated its feasibility using both theory and experiment. Theoretical analysis by finite element simulation indicated that at a proper lattice mismatch, GaN islands formed during initial growth, continued to grow up to a stable state and finally coalesced into a film. To evaluate the effectiveness of the theoretical analysis, GaN films were grown on AlN/sapphire and GaN/sapphire templates. The experimental results showed that the stress at the interface between AlN and GaN initially caused separate GaN islands to form; subsequently, new islands stopped growing, and the islands displayed lateral growth until they coalesced into a film; however, GaN grown on GaN/sapphire always showed layer-by-layer growth, from the initial stage through to the final stage of growth. Therefore, the experimental results are consistent with the theoretical analysis, and stress-induced in situ ELO is a promising method for growing high-quality GaN films on suitable lattice-mismatched substrates, which is effective not only for growing GaN, but also for other lattice-mismatched epitaxial growth.
收录类别	SCI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44393
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu X. T.,Li D. B.,Sun X. J.,et al. Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN[J]. Crystengcomm,2014,16(34):8058-8063.
APA	Liu X. T..,Li D. B..,Sun X. J..,Li Z. M..,Song H..,...&Chen Y. R..(2014).Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN.Crystengcomm,16(34),8058-8063.
MLA	Liu X. T.,et al."Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN".Crystengcomm 16.34(2014):8058-8063.

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