Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD

	Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD
其他题名	论文其他题名
	Zhang T. M.; Miao G. Q.; Jin Y. X.; Xie J. C.; Jiang H.; Li Z. M.; Song H.
	2007
发表期刊	Microelectronics Journal
ISSN	0026-2692
卷号	38 期号:3 页码:398-400
摘要	The In0.82Ga0.18As grown on InP (1 0 0) substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with two-step growth method was investigated. It was analyzed that the effect of In content of buffer layer on the crystalline quality and electrical property of the In0.82Ga0.18As eplialyers, which were characterized by X-ray diffraction, scanning electron microscopy, and Hall effect. The experiments show that the crystalline quality and the electrical property of the In0.82Ga0.18As eplialyers have close relation to the In content of buffer layer and will be optimum when the In content of buffer layer is same as that of the epilayer. (C) 2007 Elsevier Ltd. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26568
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang T. M.,Miao G. Q.,Jin Y. X.,et al. Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD[J]. Microelectronics Journal,2007,38(3):398-400.
APA	Zhang T. M..,Miao G. Q..,Jin Y. X..,Xie J. C..,Jiang H..,...&Song H..(2007).Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD.Microelectronics Journal,38(3),398-400.
MLA	Zhang T. M.,et al."Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD".Microelectronics Journal 38.3(2007):398-400.

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