Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique

	Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
其他题名	论文其他题名
	Zhang T. M.; Miao G. Q.; Jin Y. X.; Yu S. Z.; Jiang H.; Li Z. M.; Song H.
	2009
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	472 期号:1—2 页码:587-590
摘要	In0.8Ga0.2As was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on InP(100) substrate with two-step growth technique. Effect of buffer thickness on crystalline quality, surface morphology, electrical property and stress of ln(0.8)Ga(0.2)As epilayer was analyzed, and properties of the In0.8Ga0.2As epilayer were characterized by X-ray diffraction, scanning electron microscopy, Hall measurements and Raman scattering. The experiments showed that the properties of the In0.8Ga0.2As epilayer had close relation to the buffer thickness and the optimum buffer thickness was about 100 nm. (C) 2008 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26299
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Zhang T. M.,Miao G. Q.,Jin Y. X.,et al. Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique[J]. Journal of Alloys and Compounds,2009,472(1—2):587-590.
APA	Zhang T. M..,Miao G. Q..,Jin Y. X..,Yu S. Z..,Jiang H..,...&Song H..(2009).Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique.Journal of Alloys and Compounds,472(1—2),587-590.
MLA	Zhang T. M.,et al."Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique".Journal of Alloys and Compounds 472.1—2(2009):587-590.

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