Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nanowires

	Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nanowires
	Liu X.; Cao L.-z.; Song H.; Jiang H.
	2014
发表期刊	Optoelectronics Letters
ISSN	ISBN/16731905
卷号	10 期号:3 页码:168-171
摘要	4H-SiC/SiO2 nanowires are synthesized and the temperature-dependent photoluminescence (PL) properties of the nanowires are studied. Their structure and chemical composition are studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectra. At room temperature, an ultraviolet PL peak and a green PL band are observed. From the PL spectrum measured in the temperature range from 80 K to 300 K, the free excition emission, donor bound excition emission and their multiple-phonon replicas have been observed in ultraviolet region, and their origins have been identified. Moreover, it has been found that the temperature dependence of the free exciton peak position can be described by standard expression, and the thermal activation energy values extracted from the temperature dependence of the free exciton and bound exciton peak integral intensity are about 40 meV and 181 meV, respectively. 2014 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
收录类别	EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/44428
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu X.,Cao L.-z.,Song H.,et al. Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nanowires[J]. Optoelectronics Letters,2014,10(3):168-171.
APA	Liu X.,Cao L.-z.,Song H.,&Jiang H..(2014).Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nanowires.Optoelectronics Letters,10(3),168-171.
MLA	Liu X.,et al."Synthesis and photoluminescence properties of the 4H-SiC/SiO2 nanowires".Optoelectronics Letters 10.3(2014):168-171.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Liu-2014-Synthesis a（800KB）			开放获取	CC BY-ND	浏览下载