Effect of GaN buffer layers on deposition of AlN films by DC reactive magnetron sputtering

	Effect of GaN buffer layers on deposition of AlN films by DC reactive magnetron sputtering
	Wang X.-J.; Song H.; Li D.-B.; Jiang H.; Li Z.-M.; Miao G.-Q.; Chen Y.-R.; Sun X.-J.
	2012
发表期刊	Faguang Xuebao/Chinese Journal of Luminescence
ISSN	10007032
卷号	33 期号:10 页码:1089-1094
摘要	AlN films were prepared by DC reactive magnetron sputtering, and the effects of deposition conditions and GaN buffer layers on their qualities were also investigated. The crystal structure and surface morphology of films were characterized by X-ray diffractometer (XRD) and scanning electron microscopy (SEM). The XRD results show that low pressure, short target-to-substrate distance and appropriate N2 partial pressure can facilitate the (002) preferential orientation AlN films. With the increase of deposition time the full width half maximum of (002) diffraction peak for the films deposited on 50-nm-thick GaN buffer layers decreases drastically, but it was nearly unchanged for AlN films deposited on 1-m-thick GaN films. The SEM measurements reveal that the grain size distribution of AlN film deposited on 1-m-thick GaN films is much uniformer than on 50-nm-thick GaN buffer layers in the early stages of deposition, and with the increase of deposition time their grain size distributions can nearly reach the same.
收录类别	EI
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/34576
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Wang X.-J.,Song H.,Li D.-B.,et al. Effect of GaN buffer layers on deposition of AlN films by DC reactive magnetron sputtering[J]. Faguang Xuebao/Chinese Journal of Luminescence,2012,33(10):1089-1094.
APA	Wang X.-J..,Song H..,Li D.-B..,Jiang H..,Li Z.-M..,...&Sun X.-J..(2012).Effect of GaN buffer layers on deposition of AlN films by DC reactive magnetron sputtering.Faguang Xuebao/Chinese Journal of Luminescence,33(10),1089-1094.
MLA	Wang X.-J.,et al."Effect of GaN buffer layers on deposition of AlN films by DC reactive magnetron sputtering".Faguang Xuebao/Chinese Journal of Luminescence 33.10(2012):1089-1094.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
bj01280079.caj（544KB）			开放获取	--	浏览下载