Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method

	Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
其他题名	论文其他题名
	Liu X.; Song H.; Miao G. Q.; Jiang H.; Cao L. Z.; Li D. B.; Sun X. J.; Chen Y. R.; Li Z. M.
	2011
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	509 期号:24 页码:6751-6755
摘要	In0.82Ga0.18As epilayers were grown by LP-MOCVD on InP substrates with the insertion of In0.82Ga0.18As buffer layers, which were annealed at various temperatures between 490 degrees C and 630 degrees C for 5 min in AsH3 ambient. The effect of buffer layer annealing temperatures on the crystalline quality of In0.82Ga0.18As epilayers was investigated by atomic force microscopy, scanning electron microscopy, double-crystal X-ray diffraction, and room-temperature Hall measurement. The characterization results showed that high quality In0.82Ga0.18As epilayers were obtained by optimizing the annealing temperatures of buffer layers. In particular, the In0.82Ga0.18As epilayer with buffer layer annealed at 530 degrees C showed the best crystalline quality. The changes of crystalline quality of In0.82Ga0.18As epilayers at high and low annealing temperature can be attributed to the recrystallization and reevaporation of the In0.82Ga0.18As buffer layers. (C) 2011 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/26074
专题	中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu X.,Song H.,Miao G. Q.,et al. Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method[J]. Journal of Alloys and Compounds,2011,509(24):6751-6755.
APA	Liu X..,Song H..,Miao G. Q..,Jiang H..,Cao L. Z..,...&Li Z. M..(2011).Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method.Journal of Alloys and Compounds,509(24),6751-6755.
MLA	Liu X.,et al."Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method".Journal of Alloys and Compounds 509.24(2011):6751-6755.

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