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    外部： 11902
    国内： 11193
    国外： 709

  年访问量
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    国内： 7030
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  月访问量
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访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2906]
2. Full-duplex light communication with a monolithic multicomponent s.. [2699]
3. AlGaN基宽禁带半导体光电材料与器件 [1334]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1195]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1116]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1085]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1034]
8. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [1034]
9. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1027]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [1007]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [1002]
12. Effect of trimethyl-aluminum preflow on the structure and strain p.. [987]
13. 初始化生长条件对a-GaN中应变的影响 [985]
14. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [963]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [952]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [912]
17. GaN基MIS紫外探测器的电学及光电特性 [898]
18. Improved field emission performance of carbon nanotube by introduc.. [883]
19. Influence of thermal annealing duration of buffer layer on the cry.. [873]
20. Influence of threading dislocations on GaN-based metal… [811]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [807]
22. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [767]
23. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [765]
24. Study of AlN films doped by Si thermal diffusion [758]
25. 量子随机数高斯噪声信号发生器 [746]
26. Si衬底上InP纳米线的晶体结构和光学性质 [725]
27. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [723]
28. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [716]
29. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [696]
30. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [673]
31. Influence of buffer layer thickness and epilayer's growth temperat.. [647]
32. GaAs微尖阵列的制备与场发射性能 [598]
33. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [504]
34. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [502]
35. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [398]
36. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [8]
37. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [5]
38. Er3+掺杂AlScN薄膜发光及铁电性能的协同调控 [4]
39. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [4]
40. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [3]
41. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [3]
42. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [3]
43. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [3]
44. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [2]
45. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [2]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2368]
2. Full-duplex light communication with a monolithic multicomponent s.. [2116]
3. AlGaN基宽禁带半导体光电材料与器件 [612]
4. Improved field emission performance of carbon nanotube by introduc.. [358]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [352]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [313]
7. 量子随机数高斯噪声信号发生器 [305]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [299]
9. AlN插入层对a-AlGaN的外延生长的影响(英文) [292]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [286]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [278]
12. 初始化生长条件对a-GaN中应变的影响 [278]
13. 氮化铝薄膜的硅热扩散掺杂研究(英文) [272]
14. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [269]
15. Effect of buffer layer annealing temperature on the crystalline qu.. [263]
16. Effect of trimethyl-aluminum preflow on the structure and strain p.. [256]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [250]
18. GaN基MIS紫外探测器的电学及光电特性 [240]
19. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [233]
20. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [230]
21. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [218]
22. Influence of threading dislocations on GaN-based metal… [216]
23. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [212]
24. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [209]
25. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [201]
26. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [199]
27. Influence of thermal annealing duration of buffer layer on the cry.. [188]
28. Effect of GaN buffer layers on deposition of AlN films by DC react.. [186]
29. Si衬底上InP纳米线的晶体结构和光学性质 [134]
30. Study of AlN films doped by Si thermal diffusion [128]
31. GaAs微尖阵列的制备与场发射性能 [117]
32. Influence of buffer layer thickness and epilayer's growth temperat.. [48]
33. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [7]
34. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [4]
35. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [3]
36. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [3]
37. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [2]
38. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [2]
39. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [2]
40. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [2]
41. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [2]