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  总访问量
 15056
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    外部： 15056
    国内： 14075
    国外： 981

  年访问量
 10655
  访问来源
    内部： 0
    外部： 10655
    国内： 9912
    国外： 743

  月访问量
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    内部： 0
    外部： 160
    国内： 148
    国外： 12

访问量

访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [3168]
2. Full-duplex light communication with a monolithic multicomponent s.. [2910]
3. AlGaN基宽禁带半导体光电材料与器件 [1359]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1200]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1125]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1090]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1041]
8. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [1039]
9. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1034]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [1012]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [1009]
12. Effect of trimethyl-aluminum preflow on the structure and strain p.. [996]
13. 初始化生长条件对a-GaN中应变的影响 [990]
14. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [986]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [957]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [923]
17. GaN基MIS紫外探测器的电学及光电特性 [905]
18. Influence of thermal annealing duration of buffer layer on the cry.. [892]
19. Improved field emission performance of carbon nanotube by introduc.. [891]
20. Influence of threading dislocations on GaN-based metal… [827]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [809]
22. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [775]
23. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [769]
24. Study of AlN films doped by Si thermal diffusion [765]
25. 量子随机数高斯噪声信号发生器 [756]
26. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [731]
27. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [730]
28. Si衬底上InP纳米线的晶体结构和光学性质 [728]
29. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [697]
30. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [683]
31. Influence of buffer layer thickness and epilayer's growth temperat.. [649]
32. GaAs微尖阵列的制备与场发射性能 [607]
33. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [505]
34. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [503]
35. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [414]
36. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [25]
37. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [11]
38. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [9]
39. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [8]
40. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [8]
41. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [8]
42. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [6]
43. Er3+掺杂AlScN薄膜发光及铁电性能的协同调控 [5]
44. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [5]
45. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [4]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2630]
2. Full-duplex light communication with a monolithic multicomponent s.. [2326]
3. AlGaN基宽禁带半导体光电材料与器件 [635]
4. Improved field emission performance of carbon nanotube by introduc.. [366]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [357]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [318]
7. 量子随机数高斯噪声信号发生器 [314]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [306]
9. AlN插入层对a-AlGaN的外延生长的影响(英文) [301]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [291]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [285]
12. 初始化生长条件对a-GaN中应变的影响 [283]
13. 氮化铝薄膜的硅热扩散掺杂研究(英文) [279]
14. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [277]
15. Effect of buffer layer annealing temperature on the crystalline qu.. [274]
16. Effect of trimethyl-aluminum preflow on the structure and strain p.. [265]
17. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [255]
18. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [255]
19. GaN基MIS紫外探测器的电学及光电特性 [247]
20. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [244]
21. Influence of threading dislocations on GaN-based metal… [232]
22. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [232]
23. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [220]
24. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [219]
25. Influence of thermal annealing duration of buffer layer on the cry.. [207]
26. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [204]
27. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [203]
28. Effect of GaN buffer layers on deposition of AlN films by DC react.. [188]
29. Si衬底上InP纳米线的晶体结构和光学性质 [137]
30. Study of AlN films doped by Si thermal diffusion [135]
31. GaAs微尖阵列的制备与场发射性能 [126]
32. Influence of buffer layer thickness and epilayer's growth temperat.. [50]
33. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [24]
34. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [11]
35. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [8]
36. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [7]
37. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [6]
38. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [5]
39. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [5]
40. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [4]
41. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [4]