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访问统计


  总访问量
 1300
  访问来源
    内部： 0
    外部： 1300
    国内： 1155
    国外： 145

  年访问量
 145
  访问来源
    内部： 0
    外部： 145
    国内： 141
    国外： 4

  月访问量
 36
  访问来源
    内部： 0
    外部： 36
    国内： 35
    国外： 1

访问量

访问量

1. AlGaN基宽禁带半导体光电材料与器件 [1290]
2. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1111]
3. AlN插入层对a-AlGaN的外延生长的影响(英文) [959]
4. 氮化铝薄膜的硅热扩散掺杂研究(英文) [933]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [921]
6. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [902]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [877]
8. Effect of trimethyl-aluminum preflow on the structure and strain p.. [875]
9. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [872]
10. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [870]
11. 初始化生长条件对a-GaN中应变的影响 [851]
12. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [836]
13. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [833]
14. Influence of thermal annealing duration of buffer layer on the cry.. [788]
15. GaN基MIS紫外探测器的电学及光电特性 [786]
16. 一种场发射显示器件中阳极屏的制备方法 (发明) [778]
17. Effect of buffer layer annealing temperature on the crystalline qu.. [771]
18. Effect of GaN buffer layers on deposition of AlN films by DC react.. [739]
19. 一种制备倒梯形光刻胶截面的方法 (发明) [719]
20. Improved field emission performance of carbon nanotube by introduc.. [685]
21. Influence of threading dislocations on GaN-based metal… [683]
22. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [673]
23. Si衬底上InP纳米线的晶体结构和光学性质 [668]
24. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [667]
25. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [666]
26. Study of AlN films doped by Si thermal diffusion [663]
27. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [656]
28. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [654]
29. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [650]
30. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [642]
31. Full-duplex light communication with a monolithic multicomponent s.. [641]
32. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [634]
33. Influence of buffer layer thickness and epilayer's growth temperat.. [612]
34. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [607]
35. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [598]
36. 一种生长高铟组分铟镓砷的方法 (发明) [590]
37. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [566]
38. GaAs微尖阵列的制备与场发射性能 [527]
39. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [521]
40. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [474]
41. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [471]
42. 量子随机数高斯噪声信号发生器 [448]
43. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [443]
44. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [437]
45. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [170]

下载量

1. AlGaN基宽禁带半导体光电材料与器件 [567]
2. 氮化铝薄膜的硅热扩散掺杂研究(英文) [222]
3. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [214]
4. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [212]
5. Improved field emission performance of carbon nanotube by introduc.. [205]
6. 初始化生长条件对a-GaN中应变的影响 [192]
7. AlN插入层对a-AlGaN的外延生长的影响(英文) [190]
8. GaN基MIS紫外探测器的电学及光电特性 [184]
9. Effect of trimethyl-aluminum preflow on the structure and strain p.. [183]
10. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [182]
11. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [181]
12. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [179]
13. Full-duplex light communication with a monolithic multicomponent s.. [175]
14. Effect of GaN buffer layers on deposition of AlN films by DC react.. [170]
15. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [164]
16. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [162]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [160]
18. Effect of buffer layer annealing temperature on the crystalline qu.. [151]
19. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [151]
20. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [148]
21. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [140]
22. Influence of thermal annealing duration of buffer layer on the cry.. [139]
23. Influence of threading dislocations on GaN-based metal… [137]
24. Si衬底上InP纳米线的晶体结构和光学性质 [134]
25. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [130]
26. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [111]
27. 一种场发射显示器件中阳极屏的制备方法 (发明) [98]
28. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [98]
29. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [96]
30. Study of AlN films doped by Si thermal diffusion [91]
31. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [81]
32. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [78]
33. 量子随机数高斯噪声信号发生器 [76]
34. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [72]
35. GaAs微尖阵列的制备与场发射性能 [72]
36. 一种制备倒梯形光刻胶截面的方法 (发明) [70]
37. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [60]
38. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [60]
39. 一种生长高铟组分铟镓砷的方法 (发明) [50]
40. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [48]
41. Influence of buffer layer thickness and epilayer's growth temperat.. [40]
42. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [33]