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    外部： 11370
    国内： 10723
    国外： 647

  年访问量
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    外部： 6969
    国内： 6560
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  月访问量
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访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2843]
2. Full-duplex light communication with a monolithic multicomponent s.. [2661]
3. AlGaN基宽禁带半导体光电材料与器件 [1332]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1192]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1114]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1084]
7. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [1033]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1032]
9. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1024]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [1007]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [998]
12. Effect of trimethyl-aluminum preflow on the structure and strain p.. [983]
13. 初始化生长条件对a-GaN中应变的影响 [981]
14. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [961]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [950]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [911]
17. GaN基MIS紫外探测器的电学及光电特性 [896]
18. Improved field emission performance of carbon nanotube by introduc.. [881]
19. Influence of thermal annealing duration of buffer layer on the cry.. [872]
20. Influence of threading dislocations on GaN-based metal… [811]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [805]
22. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [767]
23. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [764]
24. Study of AlN films doped by Si thermal diffusion [755]
25. 量子随机数高斯噪声信号发生器 [741]
26. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [723]
27. Si衬底上InP纳米线的晶体结构和光学性质 [722]
28. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [715]
29. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [696]
30. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [670]
31. Influence of buffer layer thickness and epilayer's growth temperat.. [647]
32. GaAs微尖阵列的制备与场发射性能 [595]
33. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [504]
34. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [502]
35. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [392]
36. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [7]
37. Er3+掺杂AlScN薄膜发光及铁电性能的协同调控 [3]
38. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [2]
39. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [2]
40. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [1]
41. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [1]
42. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [1]
43. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [1]
44. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [1]
45. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [1]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2305]
2. Full-duplex light communication with a monolithic multicomponent s.. [2078]
3. AlGaN基宽禁带半导体光电材料与器件 [610]
4. Improved field emission performance of carbon nanotube by introduc.. [356]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [351]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [312]
7. 量子随机数高斯噪声信号发生器 [300]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [297]
9. AlN插入层对a-AlGaN的外延生长的影响(英文) [290]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [286]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [274]
12. 初始化生长条件对a-GaN中应变的影响 [274]
13. 氮化铝薄膜的硅热扩散掺杂研究(英文) [269]
14. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [266]
15. Effect of buffer layer annealing temperature on the crystalline qu.. [262]
16. Effect of trimethyl-aluminum preflow on the structure and strain p.. [252]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [248]
18. GaN基MIS紫外探测器的电学及光电特性 [238]
19. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [231]
20. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [229]
21. Influence of threading dislocations on GaN-based metal… [216]
22. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [213]
23. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [212]
24. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [208]
25. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [201]
26. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [196]
27. Influence of thermal annealing duration of buffer layer on the cry.. [187]
28. Effect of GaN buffer layers on deposition of AlN films by DC react.. [184]
29. Si衬底上InP纳米线的晶体结构和光学性质 [131]
30. Study of AlN films doped by Si thermal diffusion [125]
31. GaAs微尖阵列的制备与场发射性能 [114]
32. Influence of buffer layer thickness and epilayer's growth temperat.. [48]
33. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [7]
34. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [2]
35. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [2]
36. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [1]
37. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [1]
38. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [1]
39. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [1]
40. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [1]
41. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [1]