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  总访问量
 8838
  访问来源
    内部： 0
    外部： 8838
    国内： 8436
    国外： 402

  年访问量
 4437
  访问来源
    内部： 0
    外部： 4437
    国内： 4273
    国外： 165

  月访问量
 229
  访问来源
    内部： 0
    外部： 229
    国内： 207
    国外： 22

访问量

访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2427]
2. Full-duplex light communication with a monolithic multicomponent s.. [2344]
3. AlGaN基宽禁带半导体光电材料与器件 [1297]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1187]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1109]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1080]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1025]
8. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [1025]
9. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1016]
10. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [991]
11. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [984]
12. Effect of trimethyl-aluminum preflow on the structure and strain p.. [979]
13. 初始化生长条件对a-GaN中应变的影响 [975]
14. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [957]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [946]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [901]
17. GaN基MIS紫外探测器的电学及光电特性 [894]
18. Improved field emission performance of carbon nanotube by introduc.. [874]
19. Influence of thermal annealing duration of buffer layer on the cry.. [866]
20. Influence of threading dislocations on GaN-based metal… [806]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [803]
22. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [767]
23. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [757]
24. Study of AlN films doped by Si thermal diffusion [747]
25. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [721]
26. Si衬底上InP纳米线的晶体结构和光学性质 [720]
27. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [703]
28. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [696]
29. 量子随机数高斯噪声信号发生器 [665]
30. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [660]
31. Influence of buffer layer thickness and epilayer's growth temperat.. [647]
32. GaAs微尖阵列的制备与场发射性能 [589]
33. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [504]
34. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [502]
35. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [344]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1889]
2. Full-duplex light communication with a monolithic multicomponent s.. [1761]
3. AlGaN基宽禁带半导体光电材料与器件 [575]
4. Improved field emission performance of carbon nanotube by introduc.. [349]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [343]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [308]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [290]
8. AlN插入层对a-AlGaN的外延生长的影响(英文) [285]
9. 初始化生长条件对a-GaN中应变的影响 [268]
10. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [267]
11. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [263]
12. 氮化铝薄膜的硅热扩散掺杂研究(英文) [261]
13. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [256]
14. Effect of buffer layer annealing temperature on the crystalline qu.. [252]
15. Effect of trimethyl-aluminum preflow on the structure and strain p.. [248]
16. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [244]
17. GaN基MIS紫外探测器的电学及光电特性 [236]
18. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [227]
19. 量子随机数高斯噪声信号发生器 [224]
20. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [217]
21. Influence of threading dislocations on GaN-based metal… [211]
22. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [210]
23. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [201]
24. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [201]
25. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [191]
26. Effect of GaN buffer layers on deposition of AlN films by DC react.. [182]
27. Influence of thermal annealing duration of buffer layer on the cry.. [181]
28. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [165]
29. Si衬底上InP纳米线的晶体结构和光学性质 [129]
30. Study of AlN films doped by Si thermal diffusion [117]
31. GaAs微尖阵列的制备与场发射性能 [108]
32. Influence of buffer layer thickness and epilayer's growth temperat.. [48]