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    外部： 15572
    国内： 14555
    国外： 1017

  年访问量
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    外部： 11171
    国内： 10392
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  月访问量
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访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [3200]
2. Full-duplex light communication with a monolithic multicomponent s.. [2938]
3. AlGaN基宽禁带半导体光电材料与器件 [1366]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1205]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1125]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1091]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1042]
8. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [1041]
9. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1034]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [1016]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [1009]
12. Effect of trimethyl-aluminum preflow on the structure and strain p.. [1000]
13. 初始化生长条件对a-GaN中应变的影响 [990]
14. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [989]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [959]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [925]
17. GaN基MIS紫外探测器的电学及光电特性 [905]
18. Improved field emission performance of carbon nanotube by introduc.. [894]
19. Influence of thermal annealing duration of buffer layer on the cry.. [894]
20. Influence of threading dislocations on GaN-based metal… [829]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [811]
22. 量子随机数高斯噪声信号发生器 [777]
23. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [775]
24. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [771]
25. Study of AlN films doped by Si thermal diffusion [769]
26. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [733]
27. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [731]
28. Si衬底上InP纳米线的晶体结构和光学性质 [729]
29. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [697]
30. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [687]
31. Influence of buffer layer thickness and epilayer's growth temperat.. [650]
32. GaAs微尖阵列的制备与场发射性能 [608]
33. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [505]
34. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [503]
35. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [418]
36. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [34]
37. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [14]
38. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [11]
39. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [11]
40. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [8]
41. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [8]
42. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [7]
43. Er3+掺杂AlScN薄膜发光及铁电性能的协同调控 [6]
44. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [6]
45. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [5]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2662]
2. Full-duplex light communication with a monolithic multicomponent s.. [2354]
3. AlGaN基宽禁带半导体光电材料与器件 [642]
4. Improved field emission performance of carbon nanotube by introduc.. [369]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [359]
6. 量子随机数高斯噪声信号发生器 [335]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [319]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [307]
9. AlN插入层对a-AlGaN的外延生长的影响(英文) [301]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [295]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [285]
12. 初始化生长条件对a-GaN中应变的影响 [283]
13. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [281]
14. 氮化铝薄膜的硅热扩散掺杂研究(英文) [279]
15. Effect of buffer layer annealing temperature on the crystalline qu.. [276]
16. Effect of trimethyl-aluminum preflow on the structure and strain p.. [269]
17. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [258]
18. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [257]
19. GaN基MIS紫外探测器的电学及光电特性 [247]
20. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [245]
21. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [236]
22. Influence of threading dislocations on GaN-based metal… [234]
23. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [222]
24. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [219]
25. Influence of thermal annealing duration of buffer layer on the cry.. [209]
26. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [209]
27. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [205]
28. Effect of GaN buffer layers on deposition of AlN films by DC react.. [190]
29. Study of AlN films doped by Si thermal diffusion [139]
30. Si衬底上InP纳米线的晶体结构和光学性质 [138]
31. GaAs微尖阵列的制备与场发射性能 [127]
32. Influence of buffer layer thickness and epilayer's growth temperat.. [51]
33. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [33]
34. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [14]
35. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [9]
36. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [8]
37. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [7]
38. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [7]
39. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [6]
40. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [5]
41. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [5]