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  总访问量
 7218
  访问来源
    内部： 0
    外部： 7218
    国内： 6930
    国外： 288

  年访问量
 2817
  访问来源
    内部： 0
    外部： 2817
    国内： 2767
    国外： 50

  月访问量
 223
  访问来源
    内部： 0
    外部： 223
    国内： 217
    国外： 6

访问量

访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2024]
2. Full-duplex light communication with a monolithic multicomponent s.. [2003]
3. AlGaN基宽禁带半导体光电材料与器件 [1259]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1173]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1076]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1043]
7. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1000]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [997]
9. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [977]
10. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [965]
11. Effect of trimethyl-aluminum preflow on the structure and strain p.. [955]
12. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [946]
13. 初始化生长条件对a-GaN中应变的影响 [945]
14. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [937]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [911]
16. GaN基MIS紫外探测器的电学及光电特性 [882]
17. 一种场发射显示器件中阳极屏的制备方法 (发明) [878]
18. Effect of buffer layer annealing temperature on the crystalline qu.. [867]
19. Influence of thermal annealing duration of buffer layer on the cry.. [852]
20. Improved field emission performance of carbon nanotube by introduc.. [838]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [792]
22. Influence of threading dislocations on GaN-based metal… [781]
23. 一种制备倒梯形光刻胶截面的方法 (发明) [774]
24. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [768]
25. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [763]
26. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [762]
27. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [751]
28. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [740]
29. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [740]
30. Study of AlN films doped by Si thermal diffusion [739]
31. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [736]
32. Si衬底上InP纳米线的晶体结构和光学性质 [716]
33. 一种生长高铟组分铟镓砷的方法 (发明) [705]
34. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [703]
35. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [692]
36. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [682]
37. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [655]
38. Influence of buffer layer thickness and epilayer's growth temperat.. [645]
39. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [637]
40. 量子随机数高斯噪声信号发生器 [617]
41. GaAs微尖阵列的制备与场发射性能 [583]
42. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [567]
43. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [501]
44. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [499]
45. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [288]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1487]
2. Full-duplex light communication with a monolithic multicomponent s.. [1421]
3. AlGaN基宽禁带半导体光电材料与器件 [542]
4. Improved field emission performance of carbon nanotube by introduc.. [313]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [295]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [271]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [262]
8. AlN插入层对a-AlGaN的外延生长的影响(英文) [252]
9. 氮化铝薄膜的硅热扩散掺杂研究(英文) [245]
10. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [241]
11. 初始化生长条件对a-GaN中应变的影响 [238]
12. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [234]
13. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [225]
14. GaN基MIS紫外探测器的电学及光电特性 [224]
15. Effect of trimethyl-aluminum preflow on the structure and strain p.. [224]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [219]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [209]
18. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [207]
19. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [196]
20. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [192]
21. Influence of threading dislocations on GaN-based metal… [186]
22. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [184]
23. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [177]
24. 量子随机数高斯噪声信号发生器 [176]
25. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [174]
26. Effect of GaN buffer layers on deposition of AlN films by DC react.. [171]
27. Influence of thermal annealing duration of buffer layer on the cry.. [167]
28. 一种场发射显示器件中阳极屏的制备方法 (发明) [128]
29. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [125]
30. Si衬底上InP纳米线的晶体结构和光学性质 [125]
31. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [115]
32. Study of AlN films doped by Si thermal diffusion [109]
33. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [107]
34. GaAs微尖阵列的制备与场发射性能 [102]
35. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [97]
36. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [89]
37. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [81]
38. 一种制备倒梯形光刻胶截面的方法 (发明) [76]
39. 一种生长高铟组分铟镓砷的方法 (发明) [75]
40. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [67]
41. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [58]
42. Influence of buffer layer thickness and epilayer's growth temperat.. [46]