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合作作者[TOP 5]

访问统计


  总访问量
 6388
  访问来源
    内部： 0
    外部： 6388
    国内： 6125
    国外： 263

  年访问量
 1987
  访问来源
    内部： 0
    外部： 1987
    国内： 1962
    国外： 25

  月访问量
 1987
  访问来源
    内部： 0
    外部： 1987
    国内： 1962
    国外： 25

访问量

访问量

1. Full-duplex light communication with a monolithic multicomponent s.. [1763]
2. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1746]
3. AlGaN基宽禁带半导体光电材料与器件 [1219]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1147]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1035]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1010]
7. 氮化铝薄膜的硅热扩散掺杂研究(英文) [981]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [966]
9. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [945]
10. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [944]
11. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [932]
12. Effect of trimethyl-aluminum preflow on the structure and strain p.. [930]
13. 初始化生长条件对a-GaN中应变的影响 [906]
14. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [901]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [882]
16. 一种场发射显示器件中阳极屏的制备方法 (发明) [858]
17. GaN基MIS紫外探测器的电学及光电特性 [858]
18. Influence of thermal annealing duration of buffer layer on the cry.. [846]
19. Effect of buffer layer annealing temperature on the crystalline qu.. [837]
20. Improved field emission performance of carbon nanotube by introduc.. [793]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [792]
22. 一种制备倒梯形光刻胶截面的方法 (发明) [774]
23. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [768]
24. Influence of threading dislocations on GaN-based metal… [762]
25. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [762]
26. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [745]
27. Study of AlN films doped by Si thermal diffusion [737]
28. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [732]
29. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [719]
30. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [718]
31. Si衬底上InP纳米线的晶体结构和光学性质 [716]
32. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [700]
33. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [692]
34. 一种生长高铟组分铟镓砷的方法 (发明) [691]
35. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [674]
36. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [665]
37. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [655]
38. Influence of buffer layer thickness and epilayer's growth temperat.. [645]
39. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [616]
40. 量子随机数高斯噪声信号发生器 [584]
41. GaAs微尖阵列的制备与场发射性能 [569]
42. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [567]
43. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [501]
44. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [499]
45. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [287]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1211]
2. Full-duplex light communication with a monolithic multicomponent s.. [1181]
3. AlGaN基宽禁带半导体光电材料与器件 [502]
4. Improved field emission performance of carbon nanotube by introduc.. [268]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [262]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [238]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [231]
8. 氮化铝薄膜的硅热扩散掺杂研究(英文) [226]
9. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [221]
10. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [213]
11. AlN插入层对a-AlGaN的外延生长的影响(英文) [211]
12. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [202]
13. GaN基MIS紫外探测器的电学及光电特性 [200]
14. 初始化生长条件对a-GaN中应变的影响 [199]
15. Effect of trimethyl-aluminum preflow on the structure and strain p.. [199]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [189]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [180]
18. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [180]
19. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [179]
20. Effect of GaN buffer layers on deposition of AlN films by DC react.. [171]
21. Influence of threading dislocations on GaN-based metal… [168]
22. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [163]
23. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [163]
24. Influence of thermal annealing duration of buffer layer on the cry.. [161]
25. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [151]
26. 量子随机数高斯噪声信号发生器 [143]
27. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [134]
28. Si衬底上InP纳米线的晶体结构和光学性质 [125]
29. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [115]
30. 一种场发射显示器件中阳极屏的制备方法 (发明) [108]
31. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [107]
32. Study of AlN films doped by Si thermal diffusion [107]
33. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [97]
34. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [89]
35. GaAs微尖阵列的制备与场发射性能 [88]
36. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [81]
37. 一种制备倒梯形光刻胶截面的方法 (发明) [76]
38. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [70]
39. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [67]
40. 一种生长高铟组分铟镓砷的方法 (发明) [61]
41. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [58]
42. Influence of buffer layer thickness and epilayer's growth temperat.. [46]