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  总访问量
 7724
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    外部： 7724
    国内： 7424
    国外： 300

  年访问量
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    外部： 3323
    国内： 3261
    国外： 62

  月访问量
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访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2139]
2. Full-duplex light communication with a monolithic multicomponent s.. [2113]
3. AlGaN基宽禁带半导体光电材料与器件 [1282]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1182]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1098]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1062]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1014]
8. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1010]
9. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [995]
10. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [979]
11. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [971]
12. 初始化生长条件对a-GaN中应变的影响 [966]
13. Effect of trimethyl-aluminum preflow on the structure and strain p.. [962]
14. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [938]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [927]
16. GaN基MIS紫外探测器的电学及光电特性 [892]
17. 一种场发射显示器件中阳极屏的制备方法 (发明) [885]
18. Effect of buffer layer annealing temperature on the crystalline qu.. [880]
19. Improved field emission performance of carbon nanotube by introduc.. [857]
20. Influence of thermal annealing duration of buffer layer on the cry.. [853]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [795]
22. Influence of threading dislocations on GaN-based metal… [792]
23. 一种制备倒梯形光刻胶截面的方法 (发明) [775]
24. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [771]
25. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [769]
26. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [763]
27. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [761]
28. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [757]
29. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [748]
30. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [743]
31. Study of AlN films doped by Si thermal diffusion [740]
32. Si衬底上InP纳米线的晶体结构和光学性质 [716]
33. 一种生长高铟组分铟镓砷的方法 (发明) [713]
34. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [710]
35. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [693]
36. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [691]
37. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [656]
38. Influence of buffer layer thickness and epilayer's growth temperat.. [646]
39. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [643]
40. 量子随机数高斯噪声信号发生器 [639]
41. GaAs微尖阵列的制备与场发射性能 [583]
42. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [567]
43. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [501]
44. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [499]
45. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [293]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1602]
2. Full-duplex light communication with a monolithic multicomponent s.. [1531]
3. AlGaN基宽禁带半导体光电材料与器件 [561]
4. Improved field emission performance of carbon nanotube by introduc.. [332]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [313]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [290]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [279]
8. AlN插入层对a-AlGaN的外延生长的影响(英文) [274]
9. 初始化生长条件对a-GaN中应变的影响 [259]
10. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [255]
11. 氮化铝薄膜的硅热扩散掺杂研究(英文) [255]
12. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [250]
13. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [240]
14. GaN基MIS紫外探测器的电学及光电特性 [234]
15. Effect of buffer layer annealing temperature on the crystalline qu.. [232]
16. Effect of trimethyl-aluminum preflow on the structure and strain p.. [231]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [225]
18. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [208]
19. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [205]
20. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [199]
21. 量子随机数高斯噪声信号发生器 [198]
22. Influence of threading dislocations on GaN-based metal… [197]
23. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [195]
24. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [192]
25. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [186]
26. Effect of GaN buffer layers on deposition of AlN films by DC react.. [174]
27. Influence of thermal annealing duration of buffer layer on the cry.. [168]
28. 一种场发射显示器件中阳极屏的制备方法 (发明) [135]
29. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [133]
30. Si衬底上InP纳米线的晶体结构和光学性质 [125]
31. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [119]
32. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [114]
33. Study of AlN films doped by Si thermal diffusion [110]
34. GaAs微尖阵列的制备与场发射性能 [102]
35. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [98]
36. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [95]
37. 一种生长高铟组分铟镓砷的方法 (发明) [83]
38. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [82]
39. 一种制备倒梯形光刻胶截面的方法 (发明) [77]
40. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [68]
41. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [58]
42. Influence of buffer layer thickness and epilayer's growth temperat.. [47]