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  总访问量
 6970
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    内部： 0
    外部： 6970
    国内： 6689
    国外： 281

  年访问量
 2569
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    内部： 0
    外部： 2569
    国内： 2526
    国外： 43

  月访问量
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访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1950]
2. Full-duplex light communication with a monolithic multicomponent s.. [1941]
3. AlGaN基宽禁带半导体光电材料与器件 [1251]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1166]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1058]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1032]
7. 氮化铝薄膜的硅热扩散掺杂研究(英文) [994]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [987]
9. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [965]
10. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [959]
11. Effect of trimethyl-aluminum preflow on the structure and strain p.. [947]
12. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [935]
13. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [933]
14. 初始化生长条件对a-GaN中应变的影响 [932]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [899]
16. GaN基MIS紫外探测器的电学及光电特性 [874]
17. 一种场发射显示器件中阳极屏的制备方法 (发明) [870]
18. Effect of buffer layer annealing temperature on the crystalline qu.. [853]
19. Influence of thermal annealing duration of buffer layer on the cry.. [851]
20. Improved field emission performance of carbon nanotube by introduc.. [826]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [792]
22. Influence of threading dislocations on GaN-based metal… [776]
23. 一种制备倒梯形光刻胶截面的方法 (发明) [774]
24. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [768]
25. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [762]
26. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [756]
27. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [744]
28. Study of AlN films doped by Si thermal diffusion [738]
29. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [733]
30. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [729]
31. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [728]
32. Si衬底上InP纳米线的晶体结构和光学性质 [716]
33. 一种生长高铟组分铟镓砷的方法 (发明) [700]
34. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [693]
35. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [692]
36. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [675]
37. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [655]
38. Influence of buffer layer thickness and epilayer's growth temperat.. [645]
39. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [629]
40. 量子随机数高斯噪声信号发生器 [608]
41. GaAs微尖阵列的制备与场发射性能 [577]
42. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [567]
43. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [501]
44. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [499]
45. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [288]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1413]
2. Full-duplex light communication with a monolithic multicomponent s.. [1359]
3. AlGaN基宽禁带半导体光电材料与器件 [534]
4. Improved field emission performance of carbon nanotube by introduc.. [301]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [283]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [260]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [252]
8. 氮化铝薄膜的硅热扩散掺杂研究(英文) [239]
9. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [235]
10. AlN插入层对a-AlGaN的外延生长的影响(英文) [234]
11. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [226]
12. 初始化生长条件对a-GaN中应变的影响 [225]
13. GaN基MIS紫外探测器的电学及光电特性 [216]
14. Effect of trimethyl-aluminum preflow on the structure and strain p.. [216]
15. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [212]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [205]
17. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [205]
18. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [197]
19. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [189]
20. Influence of threading dislocations on GaN-based metal… [182]
21. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [182]
22. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [177]
23. Effect of GaN buffer layers on deposition of AlN films by DC react.. [171]
24. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [170]
25. 量子随机数高斯噪声信号发生器 [167]
26. Influence of thermal annealing duration of buffer layer on the cry.. [166]
27. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [162]
28. Si衬底上InP纳米线的晶体结构和光学性质 [125]
29. 一种场发射显示器件中阳极屏的制备方法 (发明) [120]
30. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [118]
31. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [115]
32. Study of AlN films doped by Si thermal diffusion [108]
33. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [100]
34. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [97]
35. GaAs微尖阵列的制备与场发射性能 [96]
36. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [82]
37. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [81]
38. 一种制备倒梯形光刻胶截面的方法 (发明) [76]
39. 一种生长高铟组分铟镓砷的方法 (发明) [70]
40. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [67]
41. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [58]
42. Influence of buffer layer thickness and epilayer's growth temperat.. [46]