关键词云

成果统计

合作作者[TOP 5]

访问统计


  总访问量
 1064

  访问来源
    内部: 0
    外部: 1064
    国内: 909
    国外: 155

  年访问量
 35

  访问来源
    内部: 0
    外部: 35
    国内: 16
    国外: 19

  月访问量
 13

  访问来源
    内部: 0
    外部: 13
    国内: 5
    国外: 8

访问量

访问量

1. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1002]
2. AlN插入层对a-AlGaN的外延生长的影响(英文) [939]
3. AlGaN基宽禁带半导体光电材料与器件 [919]
4. 氮化铝薄膜的硅热扩散掺杂研究(英文) [908]
5. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [885]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [861]
7. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [842]
8. Effect of trimethyl-aluminum preflow on the structure and strain p.. [830]
9. 初始化生长条件对a-GaN中应变的影响 [826]
10. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [814]
11. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [808]
12. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [808]
13. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [783]
14. 一种场发射显示器件中阳极屏的制备方法 (发明) [776]
15. GaN基MIS紫外探测器的电学及光电特性 [765]
16. Influence of thermal annealing duration of buffer layer on the cry.. [755]
17. Effect of GaN buffer layers on deposition of AlN films by DC react.. [730]
18. Effect of buffer layer annealing temperature on the crystalline qu.. [727]
19. 一种制备倒梯形光刻胶截面的方法 (发明) [707]
20. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [667]
21. Influence of threading dislocations on GaN-based metal… [663]
22. Improved field emission performance of carbon nanotube by introduc.. [659]
23. 宽探测波段的InGaAs红外探测器 (发明) [658]
24. 采用纳米粒子提高AlGaN基探测器性能的方法 (发明) [650]
25. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [649]
26. Study of AlN films doped by Si thermal diffusion [649]
27. 一种在硅衬底上生长非极性面AlN模板的方法 (发明) [646]
28. Si衬底上InP纳米线的晶体结构和光学性质 [636]
29. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [636]
30. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [626]
31. Full-duplex light communication with a monolithic multicomponent s.. [622]
32. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [620]
33. 一种生长高铟组分铟镓砷的方法 (发明) [598]
34. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [587]
35. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [582]
36. Influence of buffer layer thickness and epilayer's growth temperat.. [580]
37. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [563]
38. GaAs微尖阵列的制备与场发射性能 [520]
39. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [514]
40. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [473]
41. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [463]
42. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [434]
43. 量子随机数高斯噪声信号发生器 [431]
44. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [423]
45. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯(英文) [94]

下载量

1. AlGaN基宽禁带半导体光电材料与器件 [360]
2. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [211]
3. 氮化铝薄膜的硅热扩散掺杂研究(英文) [211]
4. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [203]
5. Improved field emission performance of carbon nanotube by introduc.. [198]
6. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [182]
7. 初始化生长条件对a-GaN中应变的影响 [181]
8. AlN插入层对a-AlGaN的外延生长的影响(英文) [179]
9. GaN基MIS紫外探测器的电学及光电特性 [174]
10. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [174]
11. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [172]
12. Full-duplex light communication with a monolithic multicomponent s.. [171]
13. Effect of GaN buffer layers on deposition of AlN films by DC react.. [164]
14. Effect of trimethyl-aluminum preflow on the structure and strain p.. [161]
15. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [155]
16. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [150]
17. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [144]
18. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [138]
19. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [137]
20. Effect of buffer layer annealing temperature on the crystalline qu.. [132]
21. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [132]
22. Influence of threading dislocations on GaN-based metal… [130]
23. Influence of thermal annealing duration of buffer layer on the cry.. [127]
24. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [122]
25. Si衬底上InP纳米线的晶体结构和光学性质 [117]
26. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [115]
27. 一种场发射显示器件中阳极屏的制备方法 (发明) [100]
28. 宽探测波段的InGaAs红外探测器 (发明) [96]
29. Study of AlN films doped by Si thermal diffusion [91]
30. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [89]
31. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [86]
32. 采用纳米粒子提高AlGaN基探测器性能的方法 (发明) [78]
33. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [76]
34. 一种制备倒梯形光刻胶截面的方法 (发明) [70]
35. GaAs微尖阵列的制备与场发射性能 [70]
36. 量子随机数高斯噪声信号发生器 [64]
37. 一种在硅衬底上生长非极性面AlN模板的方法 (发明) [60]
38. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [59]
39. 一种生长高铟组分铟镓砷的方法 (发明) [50]
40. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [49]
41. Influence of buffer layer thickness and epilayer's growth temperat.. [35]
42. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯(英文) [31]