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  总访问量
 14413
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    外部： 14413
    国内： 13490
    国外： 923

  年访问量
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    内部： 0
    外部： 10012
    国内： 9327
    国外： 685

  月访问量
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    国内： 1222
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访问量

访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [3125]
2. Full-duplex light communication with a monolithic multicomponent s.. [2869]
3. AlGaN基宽禁带半导体光电材料与器件 [1347]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1199]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1122]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1089]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1038]
8. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [1037]
9. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1031]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [1010]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [1004]
12. Effect of trimethyl-aluminum preflow on the structure and strain p.. [993]
13. 初始化生长条件对a-GaN中应变的影响 [988]
14. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [980]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [955]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [918]
17. GaN基MIS紫外探测器的电学及光电特性 [901]
18. Improved field emission performance of carbon nanotube by introduc.. [888]
19. Influence of thermal annealing duration of buffer layer on the cry.. [888]
20. Influence of threading dislocations on GaN-based metal… [823]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [808]
22. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [772]
23. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [768]
24. Study of AlN films doped by Si thermal diffusion [760]
25. 量子随机数高斯噪声信号发生器 [754]
26. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [729]
27. Si衬底上InP纳米线的晶体结构和光学性质 [725]
28. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [724]
29. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [697]
30. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [681]
31. Influence of buffer layer thickness and epilayer's growth temperat.. [648]
32. GaAs微尖阵列的制备与场发射性能 [603]
33. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [505]
34. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [503]
35. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [410]
36. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [19]
37. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [11]
38. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [9]
39. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [8]
40. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [8]
41. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [7]
42. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [6]
43. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [5]
44. Er3+掺杂AlScN薄膜发光及铁电性能的协同调控 [4]
45. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [4]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2587]
2. Full-duplex light communication with a monolithic multicomponent s.. [2285]
3. AlGaN基宽禁带半导体光电材料与器件 [623]
4. Improved field emission performance of carbon nanotube by introduc.. [363]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [355]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [317]
7. 量子随机数高斯噪声信号发生器 [312]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [303]
9. AlN插入层对a-AlGaN的外延生长的影响(英文) [298]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [289]
11. 初始化生长条件对a-GaN中应变的影响 [281]
12. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [280]
13. 氮化铝薄膜的硅热扩散掺杂研究(英文) [276]
14. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [275]
15. Effect of buffer layer annealing temperature on the crystalline qu.. [269]
16. Effect of trimethyl-aluminum preflow on the structure and strain p.. [262]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [253]
18. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [249]
19. GaN基MIS紫外探测器的电学及光电特性 [243]
20. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [238]
21. Influence of threading dislocations on GaN-based metal… [228]
22. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [228]
23. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [218]
24. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [216]
25. Influence of thermal annealing duration of buffer layer on the cry.. [203]
26. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [203]
27. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [202]
28. Effect of GaN buffer layers on deposition of AlN films by DC react.. [187]
29. Si衬底上InP纳米线的晶体结构和光学性质 [134]
30. Study of AlN films doped by Si thermal diffusion [130]
31. GaAs微尖阵列的制备与场发射性能 [122]
32. Influence of buffer layer thickness and epilayer's growth temperat.. [49]
33. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [18]
34. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [11]
35. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [8]
36. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [7]
37. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [5]
38. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [5]
39. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [5]
40. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [4]
41. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [4]