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    外部： 14236
    国内： 13322
    国外： 914

  年访问量
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    外部： 9835
    国内： 9159
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访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [3111]
2. Full-duplex light communication with a monolithic multicomponent s.. [2858]
3. AlGaN基宽禁带半导体光电材料与器件 [1346]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1198]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1120]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1087]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [1036]
8. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [1036]
9. 氮化铝薄膜的硅热扩散掺杂研究(英文) [1029]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [1010]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [1002]
12. Effect of trimethyl-aluminum preflow on the structure and strain p.. [993]
13. 初始化生长条件对a-GaN中应变的影响 [988]
14. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [974]
15. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [955]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [918]
17. GaN基MIS紫外探测器的电学及光电特性 [900]
18. Improved field emission performance of carbon nanotube by introduc.. [888]
19. Influence of thermal annealing duration of buffer layer on the cry.. [886]
20. Influence of threading dislocations on GaN-based metal… [821]
21. Effect of GaN buffer layers on deposition of AlN films by DC react.. [807]
22. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [771]
23. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [768]
24. Study of AlN films doped by Si thermal diffusion [760]
25. 量子随机数高斯噪声信号发生器 [754]
26. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [728]
27. Si衬底上InP纳米线的晶体结构和光学性质 [725]
28. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [720]
29. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [697]
30. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [680]
31. Influence of buffer layer thickness and epilayer's growth temperat.. [648]
32. GaAs微尖阵列的制备与场发射性能 [601]
33. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [505]
34. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [503]
35. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [408]
36. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [18]
37. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [10]
38. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [8]
39. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [8]
40. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [8]
41. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [7]
42. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [6]
43. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [5]
44. Er3+掺杂AlScN薄膜发光及铁电性能的协同调控 [4]
45. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [3]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [2573]
2. Full-duplex light communication with a monolithic multicomponent s.. [2274]
3. AlGaN基宽禁带半导体光电材料与器件 [622]
4. Improved field emission performance of carbon nanotube by introduc.. [363]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [354]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [315]
7. 量子随机数高斯噪声信号发生器 [312]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [301]
9. AlN插入层对a-AlGaN的外延生长的影响(英文) [296]
10. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [289]
11. 初始化生长条件对a-GaN中应变的影响 [281]
12. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [278]
13. 氮化铝薄膜的硅热扩散掺杂研究(英文) [274]
14. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [274]
15. Effect of buffer layer annealing temperature on the crystalline qu.. [269]
16. Effect of trimethyl-aluminum preflow on the structure and strain p.. [262]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [253]
18. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [243]
19. GaN基MIS紫外探测器的电学及光电特性 [242]
20. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [234]
21. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [228]
22. Influence of threading dislocations on GaN-based metal… [226]
23. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [217]
24. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [215]
25. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [202]
26. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [202]
27. Influence of thermal annealing duration of buffer layer on the cry.. [201]
28. Effect of GaN buffer layers on deposition of AlN films by DC react.. [186]
29. Si衬底上InP纳米线的晶体结构和光学性质 [134]
30. Study of AlN films doped by Si thermal diffusion [130]
31. GaAs微尖阵列的制备与场发射性能 [120]
32. Influence of buffer layer thickness and epilayer's growth temperat.. [49]
33. 侧壁修复提升237 nm AlGaN基Micro-LED光功率密度研究 [17]
34. Realization of Wafer-scale AlScN ferroelectric films and the Inves.. [10]
35. Design and Optimization for AlGaN-Based Deep Ultraviolet Fabry–Pe.. [8]
36. AlGaN/GaN-based SBDs grown on silicon substrates with trenched n+-.. [7]
37. Optoelectronic Artificial Synaptic Device Based on Graphene-AlGaN .. [5]
38. Polarization regulation in AlGaN solar-blind ultraviolet photodete.. [5]
39. Synergistic Regulation of Luminescent and Ferroelectric Properties.. [4]
40. Reducing specific contact resistivity of V/Al/Ti/Au n-electrode on.. [4]
41. 6-inch AlN epitaxial films with low dislocation densities via MOCV.. [3]