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Visits

1. AlN插入层对a-AlGaN的外延生长的影响(英文) [801]
2. 氮化铝薄膜的硅热扩散掺杂研究(英文) [782]
3. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [773]
4. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [749]
5. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [743]
6. Effect of trimethyl-aluminum preflow on the structure and strain p.. [725]
7. 初始化生长条件对a-GaN中应变的影响 [713]
8. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [708]
9. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [703]
10. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [694]
11. 一种场发射显示器件中阳极屏的制备方法 (发明) [673]
12. GaN基MIS紫外探测器的电学及光电特性 [659]
13. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [658]
14. Influence of thermal annealing duration of buffer layer on the cry.. [641]
15. Effect of GaN buffer layers on deposition of AlN films by DC react.. [616]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [611]
17. 一种制备倒梯形光刻胶截面的方法 (发明) [603]
18. Study of AlN films doped by Si thermal diffusion [568]
19. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [560]
20. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [559]
21. Influence of threading dislocations on GaN-based metal… [555]
22. 宽探测波段的InGaAs红外探测器 (发明) [553]
23. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [551]
24. 采用纳米粒子提高AlGaN基探测器性能的方法 (发明) [550]
25. 一种在硅衬底上生长非极性面AlN模板的方法 (发明) [544]
26. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [533]
27. Improved field emission performance of carbon nanotube by introduc.. [531]
28. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [524]
29. 一种生长高铟组分铟镓砷的方法 (发明) [512]
30. Influence of buffer layer thickness and epilayer's growth temperat.. [511]
31. Si衬底上InP纳米线的晶体结构和光学性质 [508]
32. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [504]
33. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [478]
34. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [467]
35. Full-duplex light communication with a monolithic multicomponent s.. [464]
36. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [446]
37. GaAs微尖阵列的制备与场发射性能 [444]
38. AlGaN基宽禁带半导体光电材料与器件 [424]
39. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [399]
40. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [396]
41. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [381]
42. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [347]
43. 量子随机数高斯噪声信号发生器 [305]
44. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [275]

Downloads

1. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [189]
2. 氮化铝薄膜的硅热扩散掺杂研究(英文) [186]
3. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [180]
4. GaN基MIS紫外探测器的电学及光电特性 [156]
5. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [156]
6. 初始化生长条件对a-GaN中应变的影响 [155]
7. AlN插入层对a-AlGaN的外延生长的影响(英文) [152]
8. Improved field emission performance of carbon nanotube by introduc.. [143]
9. AlGaN基宽禁带半导体光电材料与器件 [143]
10. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [142]
11. Effect of trimethyl-aluminum preflow on the structure and strain p.. [140]
12. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [138]
13. Effect of GaN buffer layers on deposition of AlN films by DC react.. [138]
14. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [129]
15. Full-duplex light communication with a monolithic multicomponent s.. [128]
16. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [127]
17. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [123]
18. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [116]
19. Influence of threading dislocations on GaN-based metal… [110]
20. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [109]
21. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [106]
22. Effect of buffer layer annealing temperature on the crystalline qu.. [105]
23. Influence of thermal annealing duration of buffer layer on the cry.. [104]
24. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [104]
25. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [93]
26. Si衬底上InP纳米线的晶体结构和光学性质 [92]
27. 一种场发射显示器件中阳极屏的制备方法 (发明) [83]
28. 宽探测波段的InGaAs红外探测器 (发明) [80]
29. Study of AlN films doped by Si thermal diffusion [78]
30. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [67]
31. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [65]
32. GaAs微尖阵列的制备与场发射性能 [65]
33. 一种制备倒梯形光刻胶截面的方法 (发明) [63]
34. 采用纳米粒子提高AlGaN基探测器性能的方法 (发明) [63]
35. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [51]
36. 一种生长高铟组分铟镓砷的方法 (发明) [47]
37. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [45]
38. 一种在硅衬底上生长非极性面AlN模板的方法 (发明) [45]
39. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [41]
40. 量子随机数高斯噪声信号发生器 [41]
41. Influence of buffer layer thickness and epilayer's growth temperat.. [33]