关键词云

成果统计

合作作者[TOP 5]

访问统计


  总访问量
 1052

  访问来源
    内部: 0
    外部: 1052
    国内: 904
    国外: 148

  年访问量
 23

  访问来源
    内部: 0
    外部: 23
    国内: 11
    国外: 12

  月访问量
 1

  访问来源
    内部: 0
    外部: 1
    国内: 0
    国外: 1

访问量

访问量

1. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [987]
2. AlN插入层对a-AlGaN的外延生长的影响(英文) [929]
3. 氮化铝薄膜的硅热扩散掺杂研究(英文) [897]
4. AlGaN基宽禁带半导体光电材料与器件 [895]
5. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [876]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [856]
7. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [838]
8. Effect of trimethyl-aluminum preflow on the structure and strain p.. [826]
9. 初始化生长条件对a-GaN中应变的影响 [821]
10. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [807]
11. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [803]
12. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [797]
13. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [780]
14. 一种场发射显示器件中阳极屏的制备方法 (发明) [768]
15. GaN基MIS紫外探测器的电学及光电特性 [764]
16. Influence of thermal annealing duration of buffer layer on the cry.. [749]
17. Effect of GaN buffer layers on deposition of AlN films by DC react.. [724]
18. Effect of buffer layer annealing temperature on the crystalline qu.. [723]
19. 一种制备倒梯形光刻胶截面的方法 (发明) [702]
20. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [662]
21. Improved field emission performance of carbon nanotube by introduc.. [655]
22. Influence of threading dislocations on GaN-based metal… [654]
23. 宽探测波段的InGaAs红外探测器 (发明) [650]
24. 采用纳米粒子提高AlGaN基探测器性能的方法 (发明) [644]
25. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [643]
26. Study of AlN films doped by Si thermal diffusion [642]
27. 一种在硅衬底上生长非极性面AlN模板的方法 (发明) [638]
28. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [633]
29. Si衬底上InP纳米线的晶体结构和光学性质 [631]
30. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [617]
31. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [616]
32. Full-duplex light communication with a monolithic multicomponent s.. [614]
33. 一种生长高铟组分铟镓砷的方法 (发明) [591]
34. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [584]
35. Influence of buffer layer thickness and epilayer's growth temperat.. [576]
36. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [576]
37. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [557]
38. GaAs微尖阵列的制备与场发射性能 [512]
39. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [508]
40. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [464]
41. Porous Carbon Networks Derived From Graphitic Carbon Nitride for E.. [460]
42. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [434]
43. 量子随机数高斯噪声信号发生器 [428]
44. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [416]
45. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯(英文) [85]

下载量

1. AlGaN基宽禁带半导体光电材料与器件 [355]
2. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [207]
3. 氮化铝薄膜的硅热扩散掺杂研究(英文) [206]
4. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [202]
5. Improved field emission performance of carbon nanotube by introduc.. [197]
6. 初始化生长条件对a-GaN中应变的影响 [181]
7. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [177]
8. AlN插入层对a-AlGaN的外延生长的影响(英文) [175]
9. GaN基MIS紫外探测器的电学及光电特性 [173]
10. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [173]
11. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [170]
12. Full-duplex light communication with a monolithic multicomponent s.. [170]
13. Effect of GaN buffer layers on deposition of AlN films by DC react.. [164]
14. Effect of trimethyl-aluminum preflow on the structure and strain p.. [161]
15. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [153]
16. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [149]
17. PbCrO4yellow-pigment nanorods-An efficient and stable visible-ligh.. [142]
18. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [137]
19. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [136]
20. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [130]
21. Effect of buffer layer annealing temperature on the crystalline qu.. [128]
22. Influence of threading dislocations on GaN-based metal… [124]
23. Influence of thermal annealing duration of buffer layer on the cry.. [123]
24. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [120]
25. Si衬底上InP纳米线的晶体结构和光学性质 [115]
26. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [108]
27. 一种场发射显示器件中阳极屏的制备方法 (发明) [99]
28. 宽探测波段的InGaAs红外探测器 (发明) [95]
29. Study of AlN films doped by Si thermal diffusion [88]
30. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [86]
31. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [85]
32. 采用纳米粒子提高AlGaN基探测器性能的方法 (发明) [77]
33. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [75]
34. 一种制备倒梯形光刻胶截面的方法 (发明) [69]
35. GaAs微尖阵列的制备与场发射性能 [67]
36. 量子随机数高斯噪声信号发生器 [63]
37. 一种在硅衬底上生长非极性面AlN模板的方法 (发明) [59]
38. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [58]
39. 一种生长高铟组分铟镓砷的方法 (发明) [49]
40. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [48]
41. Influence of buffer layer thickness and epilayer's growth temperat.. [34]
42. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯(英文) [29]