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Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field
Ben,Jianwei1,2; Sun,Xiaojuan1; Jia,Yuping1; Jiang,Ke1,2; Shi,Zhiming1; Wu,You1,2; Kai,Cuihong1,2; Wang,Yong1,2; Luo,Xuguang3; Feng,Zhe Chuan3; Li,Dabing1,2
2019-05-30
发表期刊Nanoscale Research Letters
ISSN1931-7573
卷号14期号:1
通讯作者Sun,Xiaojuan(sunxj@ciomp.ac.cn) ; Li,Dabing(lidb@ciomp.ac.cn)
摘要AbstractThe refractive index of AlN has a direct influence on AlGaN-based deep ultraviolet optoelectronic devices, such as the external quantum efficiency of light-emitting devices. Revealing the dependence of the refractive index of AlN on the threading dislocations is meaningful since high-density threading dislocations usually exist in AlN. In this paper, the effect of different dislocation densities on the refractive index of AlN is investigated. With the increase of dislocation densities from 4.24?×?108 to 3.48?×?109?cm??2, the refractive index of AlN decreases from 2.2508 to 2.2102 at 280?nm. Further study demonstrates that the nanoscale strain field around dislocations changes the propagation of light and thus decreases the refractive index of AlN. This study will be beneficial to the design of optoelectronic devices and thus realizing high-performance deep ultraviolet optoelectronic devices.
关键词Refractive index AlN Threading dislocation density Nanoscale strain field around dislocations
DOI10.1186/s11671-019-3018-7
语种英语
WOS记录号BMC:10.1186/s11671-019-3018-7
出版者Springer US
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/60258
专题中国科学院长春光学精密机械与物理研究所
通讯作者Sun,Xiaojuan; Li,Dabing
作者单位1.
2.
3.
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GB/T 7714
Ben,Jianwei,Sun,Xiaojuan,Jia,Yuping,et al. Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field[J]. Nanoscale Research Letters,2019,14(1).
APA Ben,Jianwei.,Sun,Xiaojuan.,Jia,Yuping.,Jiang,Ke.,Shi,Zhiming.,...&Li,Dabing.(2019).Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field.Nanoscale Research Letters,14(1).
MLA Ben,Jianwei,et al."Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field".Nanoscale Research Letters 14.1(2019).
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