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AlGaN基宽禁带半导体光电材料与器件
贲建伟; 孙晓娟; 蒋科; 陈洋; 石芝铭; 臧行; 张山丽; 黎大兵; 吕威
2020-11-15
Source Publication人工晶体学报
Volume49Issue:11Pages:2046-2067
AbstractAlGaN基材料是带隙可调的直接带隙宽禁带半导体材料,是制备紫外(UV)光电子器件的理想材料。经过数十年的研究,目前已经在异质衬底外延生长AlGaN基材料、高效掺杂等方面取得了巨大进展。以此为基础,AlGaN基紫外光电器件制备领域也得到长足发展。在本综述中,主要介绍了高质量AlGaN基材料的MOCVD外延生长方法、掺杂方法以及近年来在紫外发光、紫外探测器件方面取得的进展。
KeywordAlGaN基材料 外延生长 掺杂 紫外发光器件 紫外探测
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Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/63982
Collection中国科学院长春光学精密机械与物理研究所
Affiliation1.中国科学院长春光学精密机械与物理研究所
2.中国科学院大学材料与光电研究中心
3.长春工业大学
Recommended Citation
GB/T 7714
贲建伟,孙晓娟,蒋科,等. AlGaN基宽禁带半导体光电材料与器件[J]. 人工晶体学报,2020,49(11):2046-2067.
APA 贲建伟.,孙晓娟.,蒋科.,陈洋.,石芝铭.,...&吕威.(2020).AlGaN基宽禁带半导体光电材料与器件.人工晶体学报,49(11),2046-2067.
MLA 贲建伟,et al."AlGaN基宽禁带半导体光电材料与器件".人工晶体学报 49.11(2020):2046-2067.
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