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  总访问量
 13803
  访问来源
    内部： 0
    外部： 13803
    国内： 13339
    国外： 464

  年访问量
 2207
  访问来源
    内部： 0
    外部： 2207
    国内： 2170
    国外： 37

  月访问量
 3
  访问来源
    内部： 0
    外部： 3
    国内： 1
    国外： 2

访问量

访问量

1. AlGaN基宽禁带半导体光电材料与器件 [1376]
2. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1164]
3. AlN插入层对a-AlGaN的外延生长的影响(英文) [983]
4. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [959]
5. 氮化铝薄膜的硅热扩散掺杂研究(英文) [956]
6. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [927]
7. Effect of trimethyl-aluminum preflow on the structure and strain p.. [903]
8. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [902]
9. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [899]
10. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [898]
11. 初始化生长条件对a-GaN中应变的影响 [877]
12. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [854]
13. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [853]
14. Influence of thermal annealing duration of buffer layer on the cry.. [806]
15. GaN基MIS紫外探测器的电学及光电特性 [800]
16. Valence band offset of GaN/diamond heterojunction measured… [798]
17. Effect of buffer layer annealing temperature on the crystalline qu.. [796]
18. 一种场发射显示器件中阳极屏的制备方法 (发明) [790]
19. Effect of GaN buffer layers on deposition of AlN films by DC react.. [764]
20. 一种制备倒梯形光刻胶截面的方法 (发明) [732]
21. Influence of threading dislocations on GaN-based metal… [715]
22. Improved field emission performance of carbon nanotube by introduc.. [709]
23. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [694]
24. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [685]
25. Si衬底上InP纳米线的晶体结构和光学性质 [682]
26. Study of AlN films doped by Si thermal diffusion [682]
27. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [675]
28. Full-duplex light communication with a monolithic multicomponent s.. [673]
29. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [672]
30. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [667]
31. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [663]
32. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [661]
33. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [652]
34. Influence of buffer layer thickness and epilayer's growth temperat.. [646]
35. Determination of InN/Diamond Heterojunction Band Offset… [636]
36. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [634]
37. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [613]
38. 一种生长高铟组分铟镓砷的方法 (发明) [591]
39. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [568]
40. 电泳和电镀法增强碳纳米管场发射特性的研究 [563]
41. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [539]
42. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [474]
43. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [458]
44. 量子随机数高斯噪声信号发生器 [453]
45. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [443]
46. Fault diagnosis of satellite actuator based on bias-separated theo.. [395]
47. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [219]

下载量

1. AlGaN基宽禁带半导体光电材料与器件 [585]
2. 氮化铝薄膜的硅热扩散掺杂研究(英文) [234]
3. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [224]
4. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [218]
5. Improved field emission performance of carbon nanotube by introduc.. [215]
6. 初始化生长条件对a-GaN中应变的影响 [206]
7. AlN插入层对a-AlGaN的外延生长的影响(英文) [204]
8. Effect of trimethyl-aluminum preflow on the structure and strain p.. [199]
9. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [194]
10. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [193]
11. GaN基MIS紫外探测器的电学及光电特性 [189]
12. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [185]
13. Effect of GaN buffer layers on deposition of AlN films by DC react.. [182]
14. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [177]
15. Full-duplex light communication with a monolithic multicomponent s.. [176]
16. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [175]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [169]
18. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [165]
19. Effect of buffer layer annealing temperature on the crystalline qu.. [160]
20. Valence band offset of GaN/diamond heterojunction measured… [156]
21. Influence of threading dislocations on GaN-based metal… [153]
22. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [148]
23. Influence of thermal annealing duration of buffer layer on the cry.. [144]
24. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [143]
25. Si衬底上InP纳米线的晶体结构和光学性质 [136]
26. Determination of InN/Diamond Heterojunction Band Offset… [135]
27. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [127]
28. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [120]
29. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [105]
30. Study of AlN films doped by Si thermal diffusion [99]
31. Fault diagnosis of satellite actuator based on bias-separated theo.. [99]
32. 一种场发射显示器件中阳极屏的制备方法 (发明) [98]
33. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [98]
34. 电泳和电镀法增强碳纳米管场发射特性的研究 [86]
35. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [82]
36. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [79]
37. 量子随机数高斯噪声信号发生器 [78]
38. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [72]
39. 一种制备倒梯形光刻胶截面的方法 (发明) [71]
40. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [60]
41. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [60]
42. Influence of buffer layer thickness and epilayer's growth temperat.. [55]
43. 一种生长高铟组分铟镓砷的方法 (发明) [51]
44. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [49]
45. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [43]