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  总访问量
 21546
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    内部： 0
    外部： 21546
    国内： 20809
    国外： 737

  年访问量
 3858
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    内部： 0
    外部： 3858
    国内： 3781
    国外： 77

  月访问量
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    外部： 70
    国内： 65
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访问量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1972]
2. Full-duplex light communication with a monolithic multicomponent s.. [1959]
3. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [1635]
4. AlGaN基宽禁带半导体光电材料与器件 [1255]
5. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1168]
6. AlN插入层对a-AlGaN的外延生长的影响(英文) [1064]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [1035]
8. 氮化铝薄膜的硅热扩散掺杂研究(英文) [995]
9. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [991]
10. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [967]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [961]
12. Effect of trimethyl-aluminum preflow on the structure and strain p.. [949]
13. 初始化生长条件对a-GaN中应变的影响 [936]
14. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [936]
15. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [935]
16. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [903]
17. GaN基MIS紫外探测器的电学及光电特性 [876]
18. 一种场发射显示器件中阳极屏的制备方法 (发明) [872]
19. Effect of buffer layer annealing temperature on the crystalline qu.. [855]
20. Influence of thermal annealing duration of buffer layer on the cry.. [851]
21. Improved field emission performance of carbon nanotube by introduc.. [829]
22. Valence band offset of GaN/diamond heterojunction measured… [821]
23. Effect of GaN buffer layers on deposition of AlN films by DC react.. [792]
24. Influence of threading dislocations on GaN-based metal… [776]
25. 一种制备倒梯形光刻胶截面的方法 (发明) [774]
26. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [768]
27. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [762]
28. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [758]
29. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [745]
30. Determination of InN/Diamond Heterojunction Band Offset… [744]
31. Study of AlN films doped by Si thermal diffusion [738]
32. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [735]
33. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [731]
34. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [731]
35. Si衬底上InP纳米线的晶体结构和光学性质 [716]
36. 一种生长高铟组分铟镓砷的方法 (发明) [701]
37. 电泳和电镀法增强碳纳米管场发射特性的研究 [701]
38. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [697]
39. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [692]
40. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [676]
41. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [655]
42. Influence of buffer layer thickness and epilayer's growth temperat.. [645]
43. 量子随机数高斯噪声信号发生器 [611]
44. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [567]
45. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [499]
46. Fault diagnosis of satellite actuator based on bias-separated theo.. [493]
47. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [288]

下载量

1. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1435]
2. Full-duplex light communication with a monolithic multicomponent s.. [1377]
3. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [1167]
4. AlGaN基宽禁带半导体光电材料与器件 [538]
5. Improved field emission performance of carbon nanotube by introduc.. [304]
6. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [285]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [263]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [256]
9. AlN插入层对a-AlGaN的外延生长的影响(英文) [240]
10. 氮化铝薄膜的硅热扩散掺杂研究(英文) [240]
11. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [237]
12. 初始化生长条件对a-GaN中应变的影响 [229]
13. GaN基MIS紫外探测器的电学及光电特性 [218]
14. Effect of trimethyl-aluminum preflow on the structure and strain p.. [218]
15. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [215]
16. Effect of buffer layer annealing temperature on the crystalline qu.. [207]
17. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [205]
18. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [201]
19. Determination of InN/Diamond Heterojunction Band Offset… [195]
20. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [190]
21. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [186]
22. Influence of threading dislocations on GaN-based metal… [182]
23. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [179]
24. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [172]
25. Effect of GaN buffer layers on deposition of AlN films by DC react.. [171]
26. Valence band offset of GaN/diamond heterojunction measured… [170]
27. 量子随机数高斯噪声信号发生器 [170]
28. Influence of thermal annealing duration of buffer layer on the cry.. [166]
29. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [165]
30. 电泳和电镀法增强碳纳米管场发射特性的研究 [163]
31. Fault diagnosis of satellite actuator based on bias-separated theo.. [139]
32. Si衬底上InP纳米线的晶体结构和光学性质 [125]
33. 一种场发射显示器件中阳极屏的制备方法 (发明) [122]
34. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [120]
35. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [115]
36. Study of AlN films doped by Si thermal diffusion [108]
37. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [102]
38. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [97]
39. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [83]
40. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [81]
41. 一种制备倒梯形光刻胶截面的方法 (发明) [76]
42. 一种生长高铟组分铟镓砷的方法 (发明) [71]
43. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [67]
44. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [58]
45. Influence of buffer layer thickness and epilayer's growth temperat.. [46]