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  总访问量
 15490
  访问来源
    内部： 0
    外部： 15490
    国内： 14904
    国外： 586

  年访问量
 4351
  访问来源
    内部： 0
    外部： 4351
    国内： 4180
    国外： 171

  月访问量
 673
  访问来源
    内部： 0
    外部： 673
    国内： 656
    国外： 17

访问量

访问量

1. Full-duplex light communication with a monolithic multicomponent s.. [1213]
2. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1139]
3. AlGaN基宽禁带半导体光电材料与器件 [1126]
4. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [1118]
5. AlN插入层对a-AlGaN的外延生长的影响(英文) [1020]
6. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [982]
7. 氮化铝薄膜的硅热扩散掺杂研究(英文) [974]
8. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [952]
9. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [936]
10. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [922]
11. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [915]
12. Effect of trimethyl-aluminum preflow on the structure and strain p.. [912]
13. 初始化生长条件对a-GaN中应变的影响 [898]
14. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [881]
15. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [880]
16. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [862]
17. 一种场发射显示器件中阳极屏的制备方法 (发明) [854]
18. GaN基MIS紫外探测器的电学及光电特性 [844]
19. Influence of thermal annealing duration of buffer layer on the cry.. [830]
20. Effect of buffer layer annealing temperature on the crystalline qu.. [801]
21. Valence band offset of GaN/diamond heterojunction measured… [801]
22. Effect of GaN buffer layers on deposition of AlN films by DC react.. [790]
23. 一种制备倒梯形光刻胶截面的方法 (发明) [771]
24. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [764]
25. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [760]
26. Influence of threading dislocations on GaN-based metal… [744]
27. Improved field emission performance of carbon nanotube by introduc.. [741]
28. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [740]
29. Study of AlN films doped by Si thermal diffusion [729]
30. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [726]
31. Determination of InN/Diamond Heterojunction Band Offset… [714]
32. Si衬底上InP纳米线的晶体结构和光学性质 [712]
33. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [711]
34. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [707]
35. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [691]
36. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [690]
37. 一种生长高铟组分铟镓砷的方法 (发明) [687]
38. 电泳和电镀法增强碳纳米管场发射特性的研究 [657]
39. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [655]
40. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [652]
41. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [652]
42. Influence of buffer layer thickness and epilayer's growth temperat.. [645]
43. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [566]
44. 量子随机数高斯噪声信号发生器 [528]
45. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [498]
46. Fault diagnosis of satellite actuator based on bias-separated theo.. [459]
47. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [231]

下载量

1. Full-duplex light communication with a monolithic multicomponent s.. [631]
2. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [584]
3. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [454]
4. AlGaN基宽禁带半导体光电材料与器件 [415]
5. 氮化铝薄膜的硅热扩散掺杂研究(英文) [219]
6. Improved field emission performance of carbon nanotube by introduc.. [217]
7. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [217]
8. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [212]
9. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [210]
10. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [199]
11. AlN插入层对a-AlGaN的外延生长的影响(英文) [196]
12. 初始化生长条件对a-GaN中应变的影响 [191]
13. GaN基MIS紫外探测器的电学及光电特性 [186]
14. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [185]
15. Effect of trimethyl-aluminum preflow on the structure and strain p.. [181]
16. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [169]
17. Effect of GaN buffer layers on deposition of AlN films by DC react.. [169]
18. Determination of InN/Diamond Heterojunction Band Offset… [165]
19. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [160]
20. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [159]
21. Effect of buffer layer annealing temperature on the crystalline qu.. [153]
22. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [151]
23. Influence of threading dislocations on GaN-based metal… [150]
24. Valence band offset of GaN/diamond heterojunction measured… [150]
25. Influence of thermal annealing duration of buffer layer on the cry.. [145]
26. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [143]
27. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [142]
28. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [124]
29. Si衬底上InP纳米线的晶体结构和光学性质 [121]
30. 电泳和电镀法增强碳纳米管场发射特性的研究 [119]
31. Fault diagnosis of satellite actuator based on bias-separated theo.. [105]
32. 一种场发射显示器件中阳极屏的制备方法 (发明) [104]
33. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [102]
34. Study of AlN films doped by Si thermal diffusion [99]
35. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [93]
36. 量子随机数高斯噪声信号发生器 [87]
37. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [82]
38. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [79]
39. 一种制备倒梯形光刻胶截面的方法 (发明) [73]
40. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [64]
41. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [64]
42. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [63]
43. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [57]
44. 一种生长高铟组分铟镓砷的方法 (发明) [57]
45. Influence of buffer layer thickness and epilayer's growth temperat.. [46]