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  总访问量
 13055
  访问来源
    内部： 0
    外部： 13055
    国内： 12607
    国外： 448

  年访问量
 1459
  访问来源
    内部： 0
    外部： 1459
    国内： 1438
    国外： 21

  月访问量
 342
  访问来源
    内部： 0
    外部： 342
    国内： 333
    国外： 9

访问量

访问量

1. AlGaN基宽禁带半导体光电材料与器件 [1290]
2. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [1111]
3. AlN插入层对a-AlGaN的外延生长的影响(英文) [959]
4. 氮化铝薄膜的硅热扩散掺杂研究(英文) [933]
5. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [921]
6. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [902]
7. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [877]
8. Effect of trimethyl-aluminum preflow on the structure and strain p.. [875]
9. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [872]
10. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [870]
11. 初始化生长条件对a-GaN中应变的影响 [851]
12. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [836]
13. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [833]
14. Influence of thermal annealing duration of buffer layer on the cry.. [788]
15. GaN基MIS紫外探测器的电学及光电特性 [786]
16. 一种场发射显示器件中阳极屏的制备方法 (发明) [778]
17. Effect of buffer layer annealing temperature on the crystalline qu.. [771]
18. Valence band offset of GaN/diamond heterojunction measured… [770]
19. Effect of GaN buffer layers on deposition of AlN films by DC react.. [739]
20. 一种制备倒梯形光刻胶截面的方法 (发明) [719]
21. Improved field emission performance of carbon nanotube by introduc.. [685]
22. Influence of threading dislocations on GaN-based metal… [683]
23. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [673]
24. Si衬底上InP纳米线的晶体结构和光学性质 [668]
25. Carrier behavior in the vicinity of pit defects in GaN characteriz.. [667]
26. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [666]
27. Study of AlN films doped by Si thermal diffusion [663]
28. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [656]
29. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [654]
30. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [650]
31. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [642]
32. Full-duplex light communication with a monolithic multicomponent s.. [641]
33. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [634]
34. Determination of InN/Diamond Heterojunction Band Offset… [631]
35. Influence of buffer layer thickness and epilayer's growth temperat.. [612]
36. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [607]
37. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [598]
38. 一种生长高铟组分铟镓砷的方法 (发明) [590]
39. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [566]
40. 电泳和电镀法增强碳纳米管场发射特性的研究 [561]
41. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [532]
42. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [471]
43. 量子随机数高斯噪声信号发生器 [448]
44. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [443]
45. Influence of Dislocations on the Refractive Index of AlN by Nanosc.. [437]
46. Fault diagnosis of satellite actuator based on bias-separated theo.. [393]
47. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [170]

下载量

1. AlGaN基宽禁带半导体光电材料与器件 [567]
2. 氮化铝薄膜的硅热扩散掺杂研究(英文) [222]
3. GaN缓冲层对直流反应磁控溅射AlN薄膜的影响(英文) [214]
4. SiO_2纳米颗粒对a-AlGaN金属-半导体-金属结构紫外探测器的影响 [212]
5. Improved field emission performance of carbon nanotube by introduc.. [205]
6. 初始化生长条件对a-GaN中应变的影响 [192]
7. AlN插入层对a-AlGaN的外延生长的影响(英文) [190]
8. GaN基MIS紫外探测器的电学及光电特性 [184]
9. Effect of trimethyl-aluminum preflow on the structure and strain p.. [183]
10. Improved performance of GaN metal-semiconductor-metal ultraviolet .. [182]
11. 直流反应磁控溅射在氮化的蓝宝石衬底上制备AlN薄膜(英文) [181]
12. Roomerature continuous-wave electrically pumped InGaN/GaN quantum .. [179]
13. Full-duplex light communication with a monolithic multicomponent s.. [175]
14. Effect of GaN buffer layers on deposition of AlN films by DC react.. [170]
15. Effect of AlN interlayer on a-plane AlGaN grown by MOCVD [164]
16. Effect of asymmetric schottky barrier on GaN-based metal-semicondu.. [162]
17. 预通三甲基铝对AlN薄膜的结构与应变的影响(英文) [160]
18. Effect of buffer layer annealing temperature on the crystalline qu.. [151]
19. Deposition of AlN films on nitrided sapphire substrates by reactiv.. [151]
20. Valence band offset of GaN/diamond heterojunction measured… [147]
21. Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Las.. [140]
22. Influence of thermal annealing duration of buffer layer on the cry.. [139]
23. Influence of threading dislocations on GaN-based metal… [137]
24. Si衬底上InP纳米线的晶体结构和光学性质 [134]
25. Determination of InN/Diamond Heterojunction Band Offset… [131]
26. GaN-based MSM photovoltaic ultraviolet detector structure modeling.. [130]
27. 大失配、强极化第三代半导体材料体系生长动力学和载流子调控规律 [124]
28. 多层GaSb_QDs_GaAs生长中量子点的聚集及发光特性 [111]
29. 一种场发射显示器件中阳极屏的制备方法 (发明) [98]
30. 宽探测波段的ＩｎＧａＡｓ红外探测器 (发明) [98]
31. Fault diagnosis of satellite actuator based on bias-separated theo.. [98]
32. AlGaN表面相分离的同位微区荧光光谱和高空间分辨表面电势表征 [96]
33. Study of AlN films doped by Si thermal diffusion [91]
34. 电泳和电镀法增强碳纳米管场发射特性的研究 [85]
35. 正栅极结构的场发射器件中绝缘层的制作方法 (发明) [81]
36. 采用纳米粒子提高ＡｌＧａＮ基探测器性能的方法 (发明) [78]
37. 量子随机数高斯噪声信号发生器 [76]
38. 湿法腐蚀制备精细金属掩膜漏板的方法 (发明) [72]
39. 一种制备倒梯形光刻胶截面的方法 (发明) [70]
40. 一种三极结构碳纳米管场致发射显示器的集成驱动电路 (发明) [60]
41. 一种在硅衬底上生长非极性面ＡｌＮ模板的方法 (发明) [60]
42. 一种生长高铟组分铟镓砷的方法 (发明) [50]
43. 一种碳纳米管场发射平板背景光源的制备方法 (发明) [48]
44. Influence of buffer layer thickness and epilayer's growth temperat.. [40]
45. 高温退火Cu(111)衬底上生长高质量厘米尺寸单晶石墨烯（英文） [33]