CIOMP OpenIR

Browse/Search Results:  1-10 of 22 Help

Selected(0)Clear Items/Page:    Sort:
Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps 期刊论文
Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873
Authors:  K.Jiang;  X.J.Sun;  J.W.Ben;  Z.M.Shi;  Y.P.Jia;  Y.Wu;  C.H.Kai
View  |  Adobe PDF(5687Kb)  |  Favorite  |  View/Download:29/4  |  Submit date:2020/08/24
potential fluctuations,gan films,alxga1-xn,sapphire,quality,localization,relaxation,inversion  
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
Authors:  Z.M.Shi;  X.J.Sun;  Y.P.Jia;  X.K.Liu;  S.L.Zhang;  Z.B.Qi
View  |  Adobe PDF(778Kb)  |  Favorite  |  View/Download:31/7  |  Submit date:2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics  
Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 3, 页码: 8
Authors:  B.Tang;  J.Miao;  Y.C.Liu;  H.Wan;  N.Li;  S.J.Zhou;  C.Q.Gui
View  |  Adobe PDF(4957Kb)  |  Favorite  |  View/Download:30/3  |  Submit date:2020/08/24
flip-chip mini-LED,prism-structured sidewall,waveguide photons,light,extraction,emitting-diodes,gan,efficiency,performance,improvement,surface,Science & Technology - Other Topics,Materials Science  
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
Authors:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
View  |  Adobe PDF(1456Kb)  |  Favorite  |  View/Download:27/6  |  Submit date:2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Van der Waals Epitaxy: A new way for growth of III-nitrides 期刊论文
Science China-Technological Sciences, 2019, 卷号: 63, 期号: 3, 页码: 528-530
Authors:  Y.Chen;  Y.P.Jia;  Z.M.Shi;  X.J.Sun;  D.B.Li
View  |  Adobe PDF(443Kb)  |  Favorite  |  View/Download:28/3  |  Submit date:2020/08/24
gan,layer,aln,Engineering,Materials Science  
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
Authors:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
View  |  Adobe PDF(2881Kb)  |  Favorite  |  View/Download:33/2  |  Submit date:2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement  
Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch 期刊论文
Scientific Reports, 2019, 卷号: 9, 期号: 9
Authors:  H.P.Hu;  S.J.Zhou;  H.Wan;  X.T.Liu;  N.Li;  H.H.Xu
View  |  Adobe PDF(3195Kb)  |  Favorite  |  View/Download:22/4  |  Submit date:2020/08/24
light-emitting-diodes,gan,efficiency,stress,aln,Science & Technology - Other Topics  
Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 3, 页码: 8
Authors:  H.Wan;  B.Tang;  N.Li;  S.J.Zhou;  C.Q.Gui;  S.Liu
View  |  Adobe PDF(4909Kb)  |  Favorite  |  View/Download:32/4  |  Submit date:2020/08/24
GaN-based UV LED,wet chemical etching,prism-structured sidewall,crystal orientation,light extraction,efficiency,surface,plane,enhancement,extraction,layer,Science & Technology - Other Topics,Materials Science  
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition 期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
Authors:  Jiang, K.;  Sun, X. J.;  Ben, J. W.;  Jia, Y. P.;  Liu, H. N.;  Wang, Y.;  Wu, Y.;  Kai, C. H.;  Li, D. B.
View  |  Adobe PDF(4418Kb)  |  Favorite  |  View/Download:209/69  |  Submit date:2019/09/17
light-emitting-diodes  screw dislocations  threading dislocations  phase  epitaxy  gan  films  algan  core  edge  generation  Chemistry  Crystallography  
Room-temperature electrically pumped InGaN-based microdisk laser grown on Si 期刊论文
Optics Express, 2018, 卷号: 26, 期号: 4, 页码: 5043-5051
Authors:  Feng, M. X.;  He, J. L.;  Sun, Q.;  Gao, H. W.;  Li, Z. C.;  Zhou, Y.;  Liu, J. P.;  Zhang, S. M.;  Li, D. Y.;  Zhang, L. Q.;  Sun, X. J.;  Li, D. B.;  Wang, H. B.;  Ikeda, M.;  Wang, R. X.;  Yang, H.
View  |  Adobe PDF(2951Kb)  |  Favorite  |  View/Download:241/75  |  Submit date:2019/09/17
high-power  gan  diodes  Optics