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中国科学院长春光学精密机械与物理研究所
Changchun Institute of Optics,Fine Mechanics and Physics,CAS
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中科院长春光机所知识... [5]
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Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps
期刊论文
Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873
Authors:
K.Jiang
;
X.J.Sun
;
J.W.Ben
;
Z.M.Shi
;
Y.P.Jia
;
Y.Wu
;
C.H.Kai
View
  |  
Adobe PDF(5687Kb)
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View/Download:29/4
  |  
Submit date:2020/08/24
potential fluctuations,gan films,alxga1-xn,sapphire,quality,localization,relaxation,inversion
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles
期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
Authors:
Z.M.Shi
;
X.J.Sun
;
Y.P.Jia
;
X.K.Liu
;
S.L.Zhang
;
Z.B.Qi
View
  |  
Adobe PDF(778Kb)
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  |  
View/Download:31/7
  |  
Submit date:2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics
Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall
期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 3, 页码: 8
Authors:
B.Tang
;
J.Miao
;
Y.C.Liu
;
H.Wan
;
N.Li
;
S.J.Zhou
;
C.Q.Gui
View
  |  
Adobe PDF(4957Kb)
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  |  
View/Download:30/3
  |  
Submit date:2020/08/24
flip-chip mini-LED,prism-structured sidewall,waveguide photons,light,extraction,emitting-diodes,gan,efficiency,performance,improvement,surface,Science & Technology - Other Topics,Materials Science
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method
期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
Authors:
S.W.H.Chen
;
H.Y.Wang
;
C.Hu
;
Y.Chen
;
H.Wang
;
J.L.Wang
;
W.He
View
  |  
Adobe PDF(1456Kb)
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View/Download:27/6
  |  
Submit date:2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry
Van der Waals Epitaxy: A new way for growth of III-nitrides
期刊论文
Science China-Technological Sciences, 2019, 卷号: 63, 期号: 3, 页码: 528-530
Authors:
Y.Chen
;
Y.P.Jia
;
Z.M.Shi
;
X.J.Sun
;
D.B.Li
View
  |  
Adobe PDF(443Kb)
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View/Download:28/3
  |  
Submit date:2020/08/24
gan,layer,aln,Engineering,Materials Science
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations
期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
Authors:
Y.P.Chen
;
C.H.Zheng
;
L.Q.Hu
;
Y.R.Chen
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  |  
Adobe PDF(2881Kb)
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View/Download:33/2
  |  
Submit date:2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement
Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch
期刊论文
Scientific Reports, 2019, 卷号: 9, 期号: 9
Authors:
H.P.Hu
;
S.J.Zhou
;
H.Wan
;
X.T.Liu
;
N.Li
;
H.H.Xu
View
  |  
Adobe PDF(3195Kb)
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View/Download:22/4
  |  
Submit date:2020/08/24
light-emitting-diodes,gan,efficiency,stress,aln,Science & Technology - Other Topics
Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes
期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 3, 页码: 8
Authors:
H.Wan
;
B.Tang
;
N.Li
;
S.J.Zhou
;
C.Q.Gui
;
S.Liu
View
  |  
Adobe PDF(4909Kb)
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  |  
View/Download:32/4
  |  
Submit date:2020/08/24
GaN-based UV LED,wet chemical etching,prism-structured sidewall,crystal orientation,light extraction,efficiency,surface,plane,enhancement,extraction,layer,Science & Technology - Other Topics,Materials Science
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal-organic chemical vapor deposition
期刊论文
Crystengcomm, 2018, 卷号: 20, 期号: 19, 页码: 2720-2728
Authors:
Jiang, K.
;
Sun, X. J.
;
Ben, J. W.
;
Jia, Y. P.
;
Liu, H. N.
;
Wang, Y.
;
Wu, Y.
;
Kai, C. H.
;
Li, D. B.
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  |  
Adobe PDF(4418Kb)
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View/Download:209/69
  |  
Submit date:2019/09/17
light-emitting-diodes
screw dislocations
threading dislocations
phase
epitaxy
gan
films
algan
core
edge
generation
Chemistry
Crystallography
Room-temperature electrically pumped InGaN-based microdisk laser grown on Si
期刊论文
Optics Express, 2018, 卷号: 26, 期号: 4, 页码: 5043-5051
Authors:
Feng, M. X.
;
He, J. L.
;
Sun, Q.
;
Gao, H. W.
;
Li, Z. C.
;
Zhou, Y.
;
Liu, J. P.
;
Zhang, S. M.
;
Li, D. Y.
;
Zhang, L. Q.
;
Sun, X. J.
;
Li, D. B.
;
Wang, H. B.
;
Ikeda, M.
;
Wang, R. X.
;
Yang, H.
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Adobe PDF(2951Kb)
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View/Download:241/75
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Submit date:2019/09/17
high-power
gan
diodes
Optics