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Room-temperature electrically pumped InGaN-based microdisk laser grown on Si
Feng, M. X.; He, J. L.; Sun, Q.; Gao, H. W.; Li, Z. C.; Zhou, Y.; Liu, J. P.; Zhang, S. M.; Li, D. Y.; Zhang, L. Q.; Sun, X. J.; Li, D. B.; Wang, H. B.; Ikeda, M.; Wang, R. X.; Yang, H.
2018
发表期刊Optics Express
ISSN1094-4087
卷号26期号:4页码:5043-5051
摘要Silicon photonics has been longing for an efficient on-chip light source that is electrically driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes can emit directional lasing beam through a closely coupled on-chip waveguide efficiently, and hence is particularly suitable for photonics integration. The realization of electrically pumped III-nitride microdisk laser grown on Si has been impeded by the conventional undercut structure, poor material quality, and a limited quality of GaN microdisk formed by dry etching. Here we report a successful fabrication of room-temperature electrically pumped InGaN-based microdisk lasers grown on Si. A dramatic narrowing of the electroluminescence spectral line-width and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. This is the first observation of electrically pumped lasing in InGaN-based microdisk lasers grown on Si at room temperature. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
关键词high-power gan diodes Optics
DOI10.1364/oe.26.005043
收录类别SCI ; EI
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/61142
专题中国科学院长春光学精密机械与物理研究所
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Feng, M. X.,He, J. L.,Sun, Q.,et al. Room-temperature electrically pumped InGaN-based microdisk laser grown on Si[J]. Optics Express,2018,26(4):5043-5051.
APA Feng, M. X..,He, J. L..,Sun, Q..,Gao, H. W..,Li, Z. C..,...&Yang, H..(2018).Room-temperature electrically pumped InGaN-based microdisk laser grown on Si.Optics Express,26(4),5043-5051.
MLA Feng, M. X.,et al."Room-temperature electrically pumped InGaN-based microdisk laser grown on Si".Optics Express 26.4(2018):5043-5051.
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