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Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 3, 页码: 8
作者:  H.Wan;  B.Tang;  N.Li;  S.J.Zhou;  C.Q.Gui;  S.Liu
浏览  |  Adobe PDF(4909Kb)  |  收藏  |  浏览/下载：122/35  |  提交时间：2020/08/24
GaN-based UV LED,wet chemical etching,prism-structured sidewall,crystal orientation,light extraction,efficiency,surface,plane,enhancement,extraction,layer,Science & Technology - Other Topics,Materials Science  
Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps 期刊论文
Crystengcomm, 2019, 卷号: 21, 期号: 33, 页码: 4864-4873
作者:  K.Jiang;  X.J.Sun;  J.W.Ben;  Z.M.Shi;  Y.P.Jia;  Y.Wu;  C.H.Kai
浏览  |  Adobe PDF(5687Kb)  |  收藏  |  浏览/下载：202/51  |  提交时间：2020/08/24
potential fluctuations,gan films,alxga1-xn,sapphire,quality,localization,relaxation,inversion  
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles 期刊论文
Science China-Physics Mechanics & Astronomy, 2019, 卷号: 62, 期号: 12, 页码: 7
作者:  Z.M.Shi;  X.J.Sun;  Y.P.Jia;  X.K.Liu;  S.L.Zhang;  Z.B.Qi
浏览  |  Adobe PDF(778Kb)  |  收藏  |  浏览/下载：164/62  |  提交时间：2020/08/24
van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics  
Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall 期刊论文
Nanomaterials, 2019, 卷号: 9, 期号: 3, 页码: 8
作者:  B.Tang;  J.Miao;  Y.C.Liu;  H.Wan;  N.Li;  S.J.Zhou;  C.Q.Gui
浏览  |  Adobe PDF(4957Kb)  |  收藏  |  浏览/下载：170/49  |  提交时间：2020/08/24
flip-chip mini-LED,prism-structured sidewall,waveguide photons,light,extraction,emitting-diodes,gan,efficiency,performance,improvement,surface,Science & Technology - Other Topics,Materials Science  
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
浏览  |  Adobe PDF(1456Kb)  |  收藏  |  浏览/下载：147/43  |  提交时间：2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Van der Waals Epitaxy: A new way for growth of III-nitrides 期刊论文
Science China-Technological Sciences, 2019, 卷号: 63, 期号: 3, 页码: 528-530
作者:  Y.Chen;  Y.P.Jia;  Z.M.Shi;  X.J.Sun;  D.B.Li
浏览  |  Adobe PDF(443Kb)  |  收藏  |  浏览/下载：99/36  |  提交时间：2020/08/24
gan,layer,aln,Engineering,Materials Science  
Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220
作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen
浏览  |  Adobe PDF(2881Kb)  |  收藏  |  浏览/下载：157/60  |  提交时间：2020/08/24
GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement  
Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch 期刊论文
Scientific Reports, 2019, 卷号: 9, 期号: 9
作者:  H.P.Hu;  S.J.Zhou;  H.Wan;  X.T.Liu;  N.Li;  H.H.Xu
浏览  |  Adobe PDF(3195Kb)  |  收藏  |  浏览/下载：132/49  |  提交时间：2020/08/24
light-emitting-diodes,gan,efficiency,stress,aln,Science & Technology - Other Topics