Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles

doi:10.1007/s11433-019-1448-3

CIOMP OpenIR

	Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles
	Z.M.Shi; X.J.Sun; Y.P.Jia; X.K.Liu; S.L.Zhang; Z.B.Qi
	2019
发表期刊	Science China-Physics Mechanics & Astronomy
ISSN	1674-7348
卷号	62 期号:12 页码:7
摘要	The high density of defects induced by large strains in largely mismatched heteroepitaxy systems, such as AlN and GaN, because of the large lattice and thermal mismatch between substrates and epilayers is the bottleneck problem. Graphene-assisted van der Waals (vdW) heteroepitaxy offers a new opportunity to resolve this problem. However, it suffers from the difficulty of nucleation. Here we theoretically assess the effects of five 2D materials for vdW heteroepitaxy of AlN and GaN, including graphene, hBN, MoS2, gC(3)N, and gC(3)N(4), and provide physical insights using first-principle calculations. MoS2 and gC(3)N exhibit significant potential to overcome the shortcomings of graphene owing to their appropriate binding strengths and Al (or Ga) diffusion barriers. Moreover, the interface behavior between the epilayers and the substrates are carefully analyzed. Our findings are helpful not only for obtaining high-quality AlN and GaN films but also for developing new criterions to discover effective 2D materials for vdW heteroepitaxy.
关键词	van der Waals epitaxy,2D materials,first principles,light-emitting-diodes,phase epitaxy growth,algan/gan hemts,boron-nitride,gan,graphene,layer,nanosheets,crystals,semiconductor,Physics
DOI	10.1007/s11433-019-1448-3
URL	查看原文
收录类别	SCI ; EI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63076
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Z.M.Shi,X.J.Sun,Y.P.Jia,et al. Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles[J]. Science China-Physics Mechanics & Astronomy,2019,62(12):7.
APA	Z.M.Shi,X.J.Sun,Y.P.Jia,X.K.Liu,S.L.Zhang,&Z.B.Qi.(2019).Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles.Science China-Physics Mechanics & Astronomy,62(12),7.
MLA	Z.M.Shi,et al."Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles".Science China-Physics Mechanics & Astronomy 62.12(2019):7.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
Construction of van （778KB）	期刊论文	出版稿	开放获取	CC BY-NC-SA	浏览下载