Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations

doi:10.1016/j.jallcom.2018.10.281

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	Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations
	Y.P.Chen; C.H.Zheng; L.Q.Hu; Y.R.Chen
	2019
发表期刊	Journal of Alloys and Compounds
ISSN	0925-8388
卷号	775 页码:1213-1220
摘要	It is a critical challenge to realize efficient GaN-based UV photodetectors (UV-PDs) due to the existence of high-density dislocations in the epilayers prepared by heteroepitaxy. In this paper, the method of in-situ modifying the screw dislocations in GaN-based materials with one-dimensional (1D) ZnO nanorods by screw dislocation-driven self-assembled solution growth is developed to engineer and improve the photoelectric performances of the back-illuminated metal-semiconductor-metal (MSM) structure p-GaN UV-PDs. The results show that the in-situ grown 1D ZnO nanorods on the dislocations plays the roles of passivating the dislocations to suppress the dark current, improving the spectral response intensity and extending the spectral response band of the MSM structure UV-PDs. The in-situ modification of 1D ZnO nanomaterials can be developed into a method to engineer and modify the defects viz. threading dislocations of the GaN-based semiconductors so as to achieve the purpose of regulating the performance of the related optoelectronic devices, which can be extended to other material systems of optoelectronic devices. (C) 2018 Elsevier B.V. All rights reserved.
关键词	GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement
DOI	10.1016/j.jallcom.2018.10.281
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收录类别	SCI
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/63441
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y.P.Chen,C.H.Zheng,L.Q.Hu,et al. Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations[J]. Journal of Alloys and Compounds,2019,775:1213-1220.
APA	Y.P.Chen,C.H.Zheng,L.Q.Hu,&Y.R.Chen.(2019).Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations.Journal of Alloys and Compounds,775,1213-1220.
MLA	Y.P.Chen,et al."Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations".Journal of Alloys and Compounds 775(2019):1213-1220.

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