CIOMP OpenIR
Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes
H.Wan; B.Tang; N.Li; S.J.Zhou; C.Q.Gui; S.Liu
2019
发表期刊Nanomaterials
ISSN2079-4991
卷号9期号:3页码:8
摘要We demonstrated that the tetramethylammonium hydroxide (TMAH) solution possesses different etching abilities to the chip sidewalls with different orientations because the orientation of chip sidewall determines the exposed crystallographic plane of gallium nitride (GaN) and these crystallographic planes are with different chemical stability to the TMAH solution. After TMAH etching treatment, trigonal prisms were observed on sidewalls where m-plane GaN was exposed. For the investigated two types of light-emitting diodes (LEDs) with orthogonal arrangements, the LEDs with their larger sidewalls orientated along the [11-20] direction exhibited an additional 10% improvement in light output power after TMAH etching treatment compared to the LEDs with larger sidewalls orientated along the [1-100] direction.
关键词GaN-based UV LED,wet chemical etching,prism-structured sidewall,crystal orientation,light extraction,efficiency,surface,plane,enhancement,extraction,layer,Science & Technology - Other Topics,Materials Science
DOI10.3390/nano9030365
收录类别SCI
语种英语
引用统计
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/63029
专题中国科学院长春光学精密机械与物理研究所
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GB/T 7714
H.Wan,B.Tang,N.Li,et al. Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes[J]. Nanomaterials,2019,9(3):8.
APA H.Wan,B.Tang,N.Li,S.J.Zhou,C.Q.Gui,&S.Liu.(2019).Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes.Nanomaterials,9(3),8.
MLA H.Wan,et al."Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes".Nanomaterials 9.3(2019):8.
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