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Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device 期刊论文
ACS Applied Materials and Interfaces, 2023, 卷号: 15, 期号: 26, 页码: 31954-31965
Authors:  Y. Chen, Z. Shi, S. Zhang, Y. Yue, H. Zang, J. Ben, K. Jiang, Y. Jia, X. Sun and D. Li
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AlScN/n-GaN Ferroelectric Memristors with Controllable ON/OFF ratios and Reversible Bipolar Resistive Switching Characteristics 期刊论文
, 2023, 页码: 1-1
Authors:  M. Liu;  S. Lu;  Y. Jia;  H. Zang;  K. Jiang;  X. Sun and D. Li
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The AlN lattice-polarity inversion in a high-temperature-annealed c-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphire 期刊论文
Nanoscale Advances, 2023, 卷号: 6, 期号: 2, 页码: 418-427
Authors:  K. Jiang;  J. Ben;  X. Sun;  Z. Shi;  X. Wang;  T. Fang;  S. Zhang;  S. Lv;  Y. Chen;  Y. Jia;  H. Zang;  M. Liu and D. Li
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Growth mechanism and electronic properties of stacking mismatch boundaries in wurtzite III-nitride material 期刊论文
Physical Review B, 2023, 卷号: 107, 期号: 16
Authors:  H. Zang, Z. Shi, J. Ben, K. Jiang, Y. Chen, S. Zhang, M. Liu, T. Wu, Y. Jia, X. Sun and D. Li
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Tunable piezoelectric and ferroelectric responses of Al1− x Sc x N: The role of atomic arrangement 期刊论文
Science China-Physics Mechanics & Astronomy, 2023, 卷号: 66, 期号: 7, 页码: 7
Authors:  H. Zang, Z. M. Shi, M. R. Liu, Y. P. Jia, K. Jiang, J. W. Ben, Y. Chen, S. P. Lv, X. J. Sun and D. B. Li
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The stacking fault annihilation in a-plane AlN during high-temperature annealing 期刊论文
CrystEngComm, 2023, 卷号: 25, 期号: 13, 页码: 1903-1909
Authors:  X. Sun, J. Sui, J. Ben, H. Zang, K. Jiang, S. Zhang, S. Lv, Z. Shi, T. Wu and D. Li
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Formation mechanism of trench defects in green InGaN/GaN multiple quantum wells 期刊论文
Journal of Applied Physics, 2023, 卷号: 133, 期号: 12
Authors:  Z. Shi, A. Tian, X. Sun, X. Li, H. Zang, X. Su, H. Lin, P. Xu, H. Yang, J. Liu and D. Li
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Nonradiative Dynamics Induced by Vacancies in Wide-Gap III-Nitrides: Ab Initio Time-Domain Analysis 期刊论文
Journal of Physical Chemistry Letters, 2023, 卷号: 14, 期号: 29, 页码: 6719-6725
Authors:  Y. Yang, Z. Shi, S. Zhang, X. Ma, J. Bai, D. Fan, H. Zang, X. Sun and D. Li
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The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation 期刊论文
Advanced Electronic Materials, 2022, 卷号: 8, 期号: 1, 页码: 11
Authors:  Y. Chen;  Z. M. Shi;  S. L. Zhang;  J. W. Ben;  K. Jiang;  H. Zang;  Y. P. Jia;  W. Lu;  D. B. Li and X. J. Sun
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Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation 期刊论文
Acs Applied Materials & Interfaces, 2022, 卷号: 14, 期号: 33, 页码: 37947-37957
Authors:  Y. Chen;  H. Zang;  S. L. Zhang;  Z. M. Shi;  J. W. Ben;  K. Jiang;  Y. P. Jia;  M. R. Liu;  D. B. Li and X. J. Sun
Adobe PDF(9063Kb)  |  Favorite  |  View/Download：166/49  |  Submit date：2023/06/14