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Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device
Y. Chen, Z. Shi, S. Zhang, Y. Yue, H. Zang, J. Ben, K. Jiang, Y. Jia, X. Sun and D. Li
2023
Source PublicationACS Applied Materials and Interfaces
ISSN19448244
Volume15Issue:26Pages:31954-31965
AbstractFlexible III-nitride-based optoelectronic devices are crucial for the next-generation foldable/wearable lighting sterilization and sensor working in the ultraviolet (UV) region. However, the strong bonding effect at the epitaxial interface of III-nitride and bare sapphire substrate makes it difficult for epilayer separation and flexible applications. Although the emerging van der Waals epitaxy (vdWE) with graphene insertion layer offers a feasible route for weakening the interfacial adhesion, the intact centimeter-transferable III-nitride membrane still remains challenging. The spontaneous delamination occurs due to the too weak interfacial adhesion of pure vdW force, and on the contrary, the structural damage of graphene by high-temperature hydrogen etching during the III-nitride growth might also cause separation failure. Up to now, the efficient control of vdWE interfacial adhesion is still an on-going research hotspot. Herein, we demonstrate the interfacial adhesion control of III-nitride vdWE by utilizing graded high-temperature nitridation treatment of the graphene insertion layer, which generates defects and N doping in different levels. The corresponding epitaxial modes of pure-vdWE, quasi-vdWE, and mixed epitaxy are achieved according to the interfacial adhesion difference. It reveals that the quasi-vdWE enabled by small graphene defects and proper N doping triggers the low formation energy for AlN nucleation; meanwhile, the proper interfacial adhesion ensures the growth integrality and intact separation of III-nitride membrane in the centimeter scale. The UV resin-assisted bonding technique is proposed for the successful transfer of III-nitride onto a flexible substrate. The flexible photodetector is fabricated by using a graphene monolayer as the photocarrier transport channel, and it achieves a high device yield of 90%, retaining ∼60% of its initial performance after 250 bending cycles. This work offers the promising strategy for controlling vdWE interfacial adhesion, and the separable and transferable III-nitride membrane lays the foundation for advances of future UV foldable and wearable devices. © 2023 American Chemical Society.
DOI10.1021/acsami.3c04213
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Document Type期刊论文
Identifierhttp://ir.ciomp.ac.cn/handle/181722/67391
Collection中国科学院长春光学精密机械与物理研究所
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Y. Chen, Z. Shi, S. Zhang, Y. Yue, H. Zang, J. Ben, K. Jiang, Y. Jia, X. Sun and D. Li. Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device[J]. ACS Applied Materials and Interfaces,2023,15(26):31954-31965.
APA Y. Chen, Z. Shi, S. Zhang, Y. Yue, H. Zang, J. Ben, K. Jiang, Y. Jia, X. Sun and D. Li.(2023).Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device.ACS Applied Materials and Interfaces,15(26),31954-31965.
MLA Y. Chen, Z. Shi, S. Zhang, Y. Yue, H. Zang, J. Ben, K. Jiang, Y. Jia, X. Sun and D. Li."Centimeter-Transferable III-Nitride Membrane Enabled by Interfacial Adhesion Control for a Flexible Photosensitive Device".ACS Applied Materials and Interfaces 15.26(2023):31954-31965.
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