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The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation 期刊论文
Advanced Electronic Materials, 2022, 卷号: 8, 期号: 1, 页码: 11
Authors:  Y. Chen;  Z. M. Shi;  S. L. Zhang;  J. W. Ben;  K. Jiang;  H. Zang;  Y. P. Jia;  W. Lu;  D. B. Li and X. J. Sun
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A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
Authors:  Y. Chen;  Y. Wu;  J. Ben;  K. Jiang;  Y. Jia;  S. Zhang;  H. Zang;  Z. Shi;  B. Duan;  X. Sun and D. Li
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Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector 期刊论文
Carbon, 2021, 卷号: 175, 页码: 155-163
Authors:  Y. Chen;  K. Jiang;  H. Zang;  J. Ben;  S. Zhang;  Z. Shi;  Y. Jia;  W. Lu;  D. Li and X. Sun
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Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
Authors:  K. Jiang;  X. Sun;  Y. Chen;  S. Zhang;  J. Ben;  Y. Chen;  Z.-H. Zhang;  Y. Jia;  Z. Shi and D. Li
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Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode 期刊论文
Photonics Research, 2021, 卷号: 9, 期号: 10, 页码: 1907-1915
Authors:  L. Guo;  K. E. Jiang;  X. Sun;  Z. Zhang;  J. Ben;  Y. Jia;  Y. Wang and D. Li
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Origination and evolution of point defects in AlN film annealed at high temperature 期刊论文
Journal of Luminescence, 2021, 卷号: 235
Authors:  C. Kai;  H. Zang;  J. Ben;  K. Jiang;  Z. Shi;  Y. Jia;  X. Cao;  W. Lu;  X. Sun and D. Li
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Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides 期刊论文
Light: Science and Applications, 2021, 卷号: 10, 期号: 1
Authors:  K. Jiang;  X. Sun;  Z. Shi;  H. Zang;  J. Ben;  H.-X. Deng and D. Li
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Cation Vacancy in Wide Bandgap III-Nitrides as Single-Photon Emitter: A First-Principles Investigation 期刊论文
Advanced Science, 2021, 卷号: 8, 期号: 18
Authors:  H. Zang;  X. Sun;  K. Jiang;  Y. Chen;  S. Zhang;  J. Ben;  Y. Jia;  T. Wu;  Z. Shi and D. Li
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2D III-Nitride Materials: Properties, Growth, and Applications 期刊论文
Advanced Materials, 2021, 卷号: 33, 期号: 27
Authors:  J. Ben;  X. Liu;  C. Wang;  Y. Zhang;  Z. Shi;  Y. Jia;  S. Zhang;  H. Zhang;  W. Yu;  D. Li and X. Sun
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
Authors:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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