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| The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation 期刊论文
Advanced Electronic Materials, 2022, 卷号: 8, 期号: 1, 页码: 11
Authors: Y. Chen; Z. M. Shi; S. L. Zhang; J. W. Ben; K. Jiang; H. Zang; Y. P. Jia; W. Lu; D. B. Li and X. J. Sun
 View |  Adobe PDF(1673Kb) |  Favorite | View/Download：37/3 | Submit date：2022/06/13 |
| A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
Authors: Y. Chen; Y. Wu; J. Ben; K. Jiang; Y. Jia; S. Zhang; H. Zang; Z. Shi; B. Duan; X. Sun and D. Li
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| Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector 期刊论文
Carbon, 2021, 卷号: 175, 页码: 155-163
Authors: Y. Chen; K. Jiang; H. Zang; J. Ben; S. Zhang; Z. Shi; Y. Jia; W. Lu; D. Li and X. Sun
View | Adobe PDF(2364Kb) | Favorite | View/Download：28/0 | Submit date：2022/06/13 |
| Three-dimensional metal-semiconductor-metal bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16
Authors: K. Jiang; X. Sun; Y. Chen; S. Zhang; J. Ben; Y. Chen; Z.-H. Zhang; Y. Jia; Z. Shi and D. Li
View | Adobe PDF(2688Kb) | Favorite | View/Download：20/0 | Submit date：2022/06/13 |
| Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode 期刊论文
Photonics Research, 2021, 卷号: 9, 期号: 10, 页码: 1907-1915
Authors: L. Guo; K. E. Jiang; X. Sun; Z. Zhang; J. Ben; Y. Jia; Y. Wang and D. Li
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| Origination and evolution of point defects in AlN film annealed at high temperature 期刊论文
Journal of Luminescence, 2021, 卷号: 235
Authors: C. Kai; H. Zang; J. Ben; K. Jiang; Z. Shi; Y. Jia; X. Cao; W. Lu; X. Sun and D. Li
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| Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides 期刊论文
Light: Science and Applications, 2021, 卷号: 10, 期号: 1
Authors: K. Jiang; X. Sun; Z. Shi; H. Zang; J. Ben; H.-X. Deng and D. Li
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| Cation Vacancy in Wide Bandgap III-Nitrides as Single-Photon Emitter: A First-Principles Investigation 期刊论文
Advanced Science, 2021, 卷号: 8, 期号: 18
Authors: H. Zang; X. Sun; K. Jiang; Y. Chen; S. Zhang; J. Ben; Y. Jia; T. Wu; Z. Shi and D. Li
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| 2D III-Nitride Materials: Properties, Growth, and Applications 期刊论文
Advanced Materials, 2021, 卷号: 33, 期号: 27
Authors: J. Ben; X. Liu; C. Wang; Y. Zhang; Z. Shi; Y. Jia; S. Zhang; H. Zhang; W. Yu; D. Li and X. Sun
View | Adobe PDF(9996Kb) | Favorite | View/Download：25/0 | Submit date：2022/06/13 |
| Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
Authors: Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
View | Adobe PDF(2009Kb) | Favorite | View/Download：39/3 | Submit date：2021/07/06 |
