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Formation mechanism of trench defects in green InGaN/GaN multiple quantum wells 期刊论文
Journal of Applied Physics, 2023, 卷号: 133, 期号: 12
Authors:  Z. Shi, A. Tian, X. Sun, X. Li, H. Zang, X. Su, H. Lin, P. Xu, H. Yang, J. Liu and D. Li
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