Changchun Institute of Optics,Fine Mechanics and Physics,CAS
| The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation | |
| Y. Chen; Z. M. Shi; S. L. Zhang; J. W. Ben; K. Jiang; H. Zang; Y. P. Jia; W. Lu; D. B. Li and X. J. Sun | |
| 2022 | |
| Source Publication | Advanced Electronic Materials
 |
| ISSN | 2199-160X |
| Volume | 8Issue:1Pages:11 |
| Abstract | High-quality and polarity-controlled III-nitride is crucial for realizing high-performance and new types of device designs with rich functionalities, but there are still many difficulties for obtaining N-polar III-nitrides till now. In this work, the van der Waals epitaxy of high-quality N-polar gallium nitride (GaN) is reported by innovatively inserting a thin MoS2 layer. Due to the remission of thermal and lattice mismatch by the week van der Waals force in 2D MoS2 insert layer, the N-polar GaN exhibits high crystalline quality and reduced residual stress. The proposed atom deposition kinetics for the van der Waals epitaxy of the polarity-controlled aluminium nitride nucleation layer and GaN epilayer on the MoS2 lighten the great potentiality for the application of similar 2D materials. The ultraviolet photodetector based on N-polar GaN possesses over seven times' response higher than that of the Ga-polar one, which is both beneficial from the high crystalline quality and efficient polarization electric field control of the N-polar GaN. Present work provides a new strategy for the polarity control of high-quality III-nitrides by the van der Waals epitaxy with a novel 2D insert layer, which would be also extended in other optoelectronic and electronic devices. |
| DOI | 10.1002/aelm.202100759 |
| URL | 查看原文 |
| Indexed By | SCI |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.ciomp.ac.cn/handle/181722/65740 |
| Collection | 中国科学院长春光学精密机械与物理研究所 |
| Recommended Citation GB/T 7714 | Y. Chen,Z. M. Shi,S. L. Zhang,et al. The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation[J]. Advanced Electronic Materials,2022,8(1):11. |
| APA | Y. Chen.,Z. M. Shi.,S. L. Zhang.,J. W. Ben.,K. Jiang.,...&D. B. Li and X. J. Sun.(2022).The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation.Advanced Electronic Materials,8(1),11. |
| MLA | Y. Chen,et al."The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation".Advanced Electronic Materials 8.1(2022):11. |
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| The van der Waals Ep（1673KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | View Download | |
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