Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation

doi:10.1021/acsami.2c10039

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	Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation
	Y. Chen; H. Zang; S. L. Zhang; Z. M. Shi; J. W. Ben; K. Jiang; Y. P. Jia; M. R. Liu; D. B. Li and X. J. Sun
	2022
Source Publication	Acs Applied Materials & Interfaces
ISSN	1944-8244
Volume	14 Issue:33 Pages:37947-37957
Abstract	The epitaxy of III-nitrides on metallic substrates is competitive due to the advantages of vertical carrier injection, enhanced heat dissipation, and flexible application in various III-nitride-based devices. However, the serious lattice mismatch, atom diffusion, and interface reaction under the rigorous growth conditions have caused enormous obstacles. Based on the thermal and chemical stability of the graphene layer, we propose the van der Waals epitaxy of c-oriented wurtzite AlGaN on the polycrystalline Mo substrate by high-temperature metal-organic chemical vapor deposition. The insertion of a graphene layer interrupts the chaotic epitaxial relationship between the polycrystalline metal and epilayers, resulting in the single-crystalline orientation along the wurtzite (0002) plane and residual stress release in AlGaN because of the weak van der Waals interaction. We also demonstrate that the epitaxy of AlGaN on Mo metal possesses enhanced heat dissipation ability, in which the epilayer temperature is controlled at only 28.7 degrees C by the heating of a similar to 54 degrees C hot plate. The heat dissipation enhancement for the present epitaxial structures provides a desirable strategy for the fabrication of efficient ultraviolet devices with excellent stability and lifetime.
DOI	10.1021/acsami.2c10039
URL	查看原文
Indexed By	sci ; ei
Language	英语
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Document Type	期刊论文
Identifier	http://ir.ciomp.ac.cn/handle/181722/67227
Collection	中国科学院长春光学精密机械与物理研究所
Recommended Citation GB/T 7714	Y. Chen,H. Zang,S. L. Zhang,et al. Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation[J]. Acs Applied Materials & Interfaces,2022,14(33):37947-37957.
APA	Y. Chen.,H. Zang.,S. L. Zhang.,Z. M. Shi.,J. W. Ben.,...&D. B. Li and X. J. Sun.(2022).Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation.Acs Applied Materials & Interfaces,14(33),37947-37957.
MLA	Y. Chen,et al."Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation".Acs Applied Materials & Interfaces 14.33(2022):37947-37957.

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中国科学院长春光学精密机械与物理研究所