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The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation 期刊论文
Advanced Electronic Materials, 2022, 卷号: 8, 期号: 1, 页码: 11
Authors:  Y. Chen;  Z. M. Shi;  S. L. Zhang;  J. W. Ben;  K. Jiang;  H. Zang;  Y. P. Jia;  W. Lu;  D. B. Li and X. J. Sun
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Van der Waals Epitaxy of c-Oriented Wurtzite AlGaN on Polycrystalline Mo Substrates for Enhanced Heat Dissipation 期刊论文
Acs Applied Materials & Interfaces, 2022, 卷号: 14, 期号: 33, 页码: 37947-37957
Authors:  Y. Chen;  H. Zang;  S. L. Zhang;  Z. M. Shi;  J. W. Ben;  K. Jiang;  Y. P. Jia;  M. R. Liu;  D. B. Li and X. J. Sun
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Introducing voids around the interlayer of AlN by high temperature annealing 期刊论文
Chinese Physics B, 2022, 卷号: 31, 期号: 7, 页码: 6
Authors:  J. W. Ben;  J. L. Luo;  Z. C. Lin;  X. J. Sun;  X. K. Liu and X. H. Li
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Sodium birnessite@graphene hierarchical structures for ultrafast sodium ion storage 期刊论文
Journal of Electroanalytical Chemistry, 2022, 卷号: 906, 页码: 8
Authors:  J. W. Ben;  Y. P. Jia;  T. Wu;  X. K. Liu and X. H. Li
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Origination and evolution of point defects in AlN film annealed at high temperature 期刊论文
Journal of Luminescence, 2021, 卷号: 235
Authors:  C. Kai;  H. Zang;  J. Ben;  K. Jiang;  Z. Shi;  Y. Jia;  X. Cao;  W. Lu;  X. Sun and D. Li
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2D III-Nitride Materials: Properties, Growth, and Applications 期刊论文
Advanced Materials, 2021, 卷号: 33, 期号: 27
Authors:  J. Ben;  X. Liu;  C. Wang;  Y. Zhang;  Z. Shi;  Y. Jia;  S. Zhang;  H. Zhang;  W. Yu;  D. Li and X. Sun
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Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector 期刊论文
Carbon, 2021, 卷号: 175, 页码: 155-163
Authors:  Y. Chen;  K. Jiang;  H. Zang;  J. Ben;  S. Zhang;  Z. Shi;  Y. Jia;  W. Lu;  D. Li and X. Sun
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Three-dimensional metal semiconductor meta bipolar ultraviolet phototransistor based on GaN p-i-n epilayer 期刊论文
Applied Physics Letters, 2021, 卷号: 119, 期号: 16, 页码: 6
Authors:  K. Jiang;  X. J. Sun;  Y. X. Chen;  S. L. Zhang;  J. W. Ben;  Y. Chen;  Z. H. Zhang;  Y. P. Jia;  Z. M. Shi and D. B. Li
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Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes 期刊论文
Nanomaterials, 2021, 卷号: 11, 期号: 12, 页码: 13
Authors:  Y. Wang;  Z. H. Zhang;  L. Guo;  Y. X. Chen;  Y. H. Li;  Z. B. Qi;  J. W. Ben;  X. J. Sun and D. B. Li
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Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM 期刊论文
Journal of Physics D-Applied Physics, 2020, 卷号: 53, 期号: 23, 页码: 6
Authors:  C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li
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