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The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation 期刊论文
Advanced Electronic Materials, 2022, 卷号: 8, 期号: 1, 页码: 11
Authors:  Y. Chen;  Z. M. Shi;  S. L. Zhang;  J. W. Ben;  K. Jiang;  H. Zang;  Y. P. Jia;  W. Lu;  D. B. Li and X. J. Sun
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Growth of high-quality wafer-scale graphene on dielectric substrate for high-response ultraviolet photodetector 期刊论文
Carbon, 2021, 卷号: 175, 页码: 155-163
Authors:  Y. Chen;  K. Jiang;  H. Zang;  J. Ben;  S. Zhang;  Z. Shi;  Y. Jia;  W. Lu;  D. Li and X. Sun
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Origination and evolution of point defects in AlN film annealed at high temperature 期刊论文
Journal of Luminescence, 2021, 卷号: 235
Authors:  C. Kai;  H. Zang;  J. Ben;  K. Jiang;  Z. Shi;  Y. Jia;  X. Cao;  W. Lu;  X. Sun and D. Li
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2D III-Nitride Materials: Properties, Growth, and Applications 期刊论文
Advanced Materials, 2021, 卷号: 33, 期号: 27
Authors:  J. Ben;  X. Liu;  C. Wang;  Y. Zhang;  Z. Shi;  Y. Jia;  S. Zhang;  H. Zhang;  W. Yu;  D. Li and X. Sun
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Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy 期刊论文
Applied Physics Letters, 2020, 卷号: 117, 期号: 5, 页码: 5
Authors:  Y. Chen,H. Zang,K. Jiang,J. W. Ben,S. L. Zhang,Z. M. Shi,Y. P. Jia,W. Lu,X. J. Sun and D. B. Li
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In situ fabrication of Al surface plasmon nanoparticles by metal-organic chemical vapor deposition for enhanced performance of AlGaN deep ultraviolet detectors 期刊论文
Nanoscale Advances, 2020, 卷号: 2, 期号: 5, 页码: 1854-1858
Authors:  Y. Wu,X. J. Sun,Z. M. Shi,Y. P. Jia,K. Jiang,J. W. Ben,C. H. Kai,Y. Wang,W. Lu and D. B. Li
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Suppressing the luminescence of V cation -related point -defect in AlGaN grown by MOCVD on HVPE-AlN 期刊论文
Applied Surface Science, 2020, 卷号: 520, 页码: 9
Authors:  K. Jiang,X. J. Sun,J. W. Ben,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,T. Wu,W. Lu and D. B. Li
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Polarization-enhanced AlGaN solar-blind ultraviolet detectors 期刊论文
Photonics Research, 2020, 卷号: 8, 期号: 7, 页码: 1243-1252
Authors:  K. Jiang,X. J. Sun,Z. H. Zhang,J. W. Ben,J. M. Che,Z. M. Shi,Y. P. Jia,Y. Chen,S. L. Zhang,W. Lv and D. B. Li
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The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
Authors:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
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Characterization of carrier transport behavior of specific type dislocations in GaN by light assisted KPFM 期刊论文
Journal of Physics D-Applied Physics, 2020, 卷号: 53, 期号: 23, 页码: 6
Authors:  C. H. Kai,X. J. Sun,Y. P. Jia,K. Jiang,Z. M. Shi,J. W. Ben,Y. Wu,Y. Wang and D. B. Li
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