Changchun Institute of Optics,Fine Mechanics and Physics,CAS
| AlScN/n-GaN Ferroelectric Memristors with Controllable ON/OFF ratios and Reversible Bipolar Resistive Switching Characteristics | |
| M. Liu; S. Lu; Y. Jia; H. Zang; K. Jiang; X. Sun and D. Li | |
| 2023 | |
| ISSN | 07413106 |
| 页码 | 1-1 |
| 摘要 | AlScN-based memristors show high potential of non-volatile storage and neuromorphic computing. Here, we report an AlScN/n-GaN heterostructure memristor with a large ON/OFF ratio over 105 attributed to the coexistence of heterointerface energy band modulation and trap-assisted conduction mechanisms. Unlike typical ferroelectric memristors, the device presents obvious reproducible bipolar resistive switching characteristics without polarization flipping due to the extra trap-assisted conductive path, which effectively reduces energy consumption. Remarkably, multi-level ON/OFF ratios and reversible bipolar resistive switching characteristics can be achieved by regulating the magnitude and direction of ferroelectric polarization, indicating that different operating modes can be achieved on a single device, which shows promise for improving device integration density and information security. These findings help elucidate the resistive switching mechanism and the effect of ferroelectric polarization on device properties, which pave the way for applications of power-efficient CMOS-compatible nitride memristors. IEEE |
| DOI | 10.1109/LED.2023.3347233 |
| URL | 查看原文 |
| 收录类别 | ei |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.ciomp.ac.cn/handle/181722/67702 |
| 专题 | 中国科学院长春光学精密机械与物理研究所 |
| 推荐引用方式 GB/T 7714 | M. Liu,S. Lu,Y. Jia,et al. AlScN/n-GaN Ferroelectric Memristors with Controllable ON/OFF ratios and Reversible Bipolar Resistive Switching Characteristics[J],2023:1-1. |
| APA | M. Liu,S. Lu,Y. Jia,H. Zang,K. Jiang,&X. Sun and D. Li.(2023).AlScN/n-GaN Ferroelectric Memristors with Controllable ON/OFF ratios and Reversible Bipolar Resistive Switching Characteristics.,1-1. |
| MLA | M. Liu,et al."AlScN/n-GaN Ferroelectric Memristors with Controllable ON/OFF ratios and Reversible Bipolar Resistive Switching Characteristics".(2023):1-1. |
| 条目包含的文件 | 下载所有文件 | |||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| AlScN_n-GaN Ferroele（1131KB） | 期刊论文 | 出版稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 | |
| 个性服务 |
| 推荐该条目 |
| 保存到收藏夹 |
| 查看访问统计 |
| 导出为Endnote文件 |
| 谷歌学术 |
| 谷歌学术中相似的文章 |
| [M. Liu]的文章 |
| [S. Lu]的文章 |
| [Y. Jia]的文章 |
| 百度学术 |
| 百度学术中相似的文章 |
| [M. Liu]的文章 |
| [S. Lu]的文章 |
| [Y. Jia]的文章 |
| 必应学术 |
| 必应学术中相似的文章 |
| [M. Liu]的文章 |
| [S. Lu]的文章 |
| [Y. Jia]的文章 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论