Introducing voids around the interlayer of AlN by high temperature annealing

doi:10.1088/1674-1056/ac3d7f

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	Introducing voids around the interlayer of AlN by high temperature annealing
	J. W. Ben; J. L. Luo; Z. C. Lin; X. J. Sun; X. K. Liu and X. H. Li
	2022
发表期刊	Chinese Physics B
ISSN	1674-1056
卷号	31 期号:7 页码:6
摘要	Introducing voids into AlN layer at a certain height using a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure was designed and grown by metal-organic chemical vapor deposition. Then, the AlN template was annealed at 1700 degrees C for an hour to introduce the voids. It was found that voids were formed in the AlN layer after high-temperature annealing and they were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template decreased from 5.26 x 10(9) cm(-2) to 5.10 x 10(8) cm(-2). This work provides a possible method to introduce voids into AlN layer at a designated height, which will benefit the design of AlN-based devices.
DOI	10.1088/1674-1056/ac3d7f
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收录类别	sci ; ei
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/66770
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J. W. Ben,J. L. Luo,Z. C. Lin,et al. Introducing voids around the interlayer of AlN by high temperature annealing[J]. Chinese Physics B,2022,31(7):6.
APA	J. W. Ben,J. L. Luo,Z. C. Lin,X. J. Sun,&X. K. Liu and X. H. Li.(2022).Introducing voids around the interlayer of AlN by high temperature annealing.Chinese Physics B,31(7),6.
MLA	J. W. Ben,et al."Introducing voids around the interlayer of AlN by high temperature annealing".Chinese Physics B 31.7(2022):6.

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