Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

doi:10.3390/nano11123328

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	Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
	Y. Wang; Z. H. Zhang; L. Guo; Y. X. Chen; Y. H. Li; Z. B. Qi; J. W. Ben; X. J. Sun and D. B. Li
	2021
发表期刊	Nanomaterials
卷号	11 期号:12 页码:13
摘要	In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as the dielectric layers in p(+)-Al0.55Ga0.45N/AlGaN/n(+)-Al0.55Ga0.45N polarization tunnel junctions (PTJs) were modeled to promote carrier tunneling, suppress current crowding, avoid optical absorption, and further enhance the performance of LEDs. AlGaN with different Al contents in PTJs were optimized by APSYS software to investigate the effect of a polarization-induced electric field (E-p) on hole tunneling in the PTJ. The results indicated that Al0.7Ga0.3N as a dielectric layer can realize a higher hole concentration and a higher radiative recombination rate in Multiple Quantum Wells (MQWs) than Al0.4Ga0.6N as the dielectric layer. In addition, Al0.7Ga0.3N as the dielectric layer has relatively high resistance, which can increase lateral current spreading and enhance the uniformity of the top emitting light of LEDs. However, the relatively high resistance of Al0.7Ga0.3N as the dielectric layer resulted in an increase in the forward voltage, so much higher biased voltage was required to enhance the hole tunneling efficiency of PTJ. Through the adoption of PTJs with Al0.7Ga0.3N as the dielectric layers, enhanced internal quantum efficiency (IQE) and optical output power will be possible.
DOI	10.3390/nano11123328
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收录类别	sci
语种	英语
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/66455
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. Wang,Z. H. Zhang,L. Guo,et al. Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes[J]. Nanomaterials,2021,11(12):13.
APA	Y. Wang.,Z. H. Zhang.,L. Guo.,Y. X. Chen.,Y. H. Li.,...&X. J. Sun and D. B. Li.(2021).Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes.Nanomaterials,11(12),13.
MLA	Y. Wang,et al."Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes".Nanomaterials 11.12(2021):13.

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