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Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process 期刊论文
Physica Status Solidi a-Applications and Materials Science, 2022, 卷号: 219, 期号: 2, 页码: 6
Authors:  Y. R. Chen;  Z. W. Zhang;  G. Q. Miao;  H. Jiang and H. Song
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A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes 期刊论文
Materials Letters, 2022, 卷号: 308, 期号: 4
Authors:  Y. R. Chen;  Z. W. Zhang;  G. Q. Miao;  H. Jiang and H. Song
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AlGaN-based UV-C distributed Bragg reflector with a -cavity designed for an external cavity structure electron-beam-pumped VCSEL 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 820
Authors:  Y. R. Chen, Z. W. Zhang, G. Q. Miao, H. Jiang, Z. M. Li and H. Song
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Epitaxial growth of polarization-graded AlGaN-based solar-blind ultraviolet photodetectors on pre-grown AlN templates 期刊论文
Materials Letters, 2020, 卷号: 281, 页码: 4
Authors:  Y. R. Chen,Z. W. Zhang,G. Q. Miao,H. Jiang,Z. M. Li and H. Song
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High-accuracy measurement of the focal length and distortion of optical systems based on interferometry 期刊论文
Applied Optics, 2018, 卷号: 57, 期号: 18, 页码: 5217-5223
Authors:  Yang, G. Q.;  Miao, L.;  Zhang, X.;  Sun, C.;  Qiao, Y. F.
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talbot interferometry  Optics  
High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes 期刊论文
Journal of Materials Science-Materials in Electronics, 2018, 卷号: 29, 期号: 11, 页码: 9077-9082
Authors:  Han, W. Y.;  Zhang, Z. W.;  Li, Z. M.;  Chen, Y. R.;  Song, H.;  Miao, G. Q.;  Fan, F.;  Chen, H. F.;  Liu, Z.;  Jiang, H.
View  |  Adobe PDF(1849Kb)  |  Favorite  |  View/Download:283/85  |  Submit date:2019/09/17
p-i-n  photodetectors  template  films  Engineering  Materials Science  Physics  
The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD 期刊论文
Journal of Materials Chemistry C, 2018, 卷号: 6, 期号: 18, 页码: 4936-4942
Authors:  Chen, Y. R.;  Zhang, Z. W.;  Jiang, H.;  Li, Z. M.;  Miao, G. Q.;  Song, H.
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threading dislocations  nucleation layer  gan  temperature  sapphire  Materials Science  Physics  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
Authors:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
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Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering  
The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors 期刊论文
Physica Status Solidi a-Applications and Materials Science, 2018, 卷号: 215, 期号: 2, 页码: 5
Authors:  Chen, Y. R.;  Zhang, Z. W.;  Li, Z. M.;  Jiang, H.;  Miao, G. Q.;  Song, H.
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AlGaN  inserted layers  p-i-n structures  ultraviolet photodetectors  suppression  diodes  Materials Science  Physics  
Dependence of dark current and photoresponse on polarization charges for AlGaN-based heterojunction p-i-n photodetectors 期刊论文
Physica Status Solidi a-Applications and Materials Science, 2017, 卷号: 214, 期号: 6
Authors:  Chen, H. F.;  Y. R. Chen;  H. Song;  Z. M. Li;  H. Jiang;  D. B. Li;  G. Q. Miao;  X. J. Sun and Z. W. Zhang
View  |  Adobe PDF(1197Kb)  |  Favorite  |  View/Download:220/59  |  Submit date:2018/06/08