Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process

doi:10.1002/pssa.202100577

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	Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process
	Y. R. Chen; Z. W. Zhang; G. Q. Miao; H. Jiang and H. Song
	2022
发表期刊	Physica Status Solidi a-Applications and Materials Science
ISSN	1862-6300
卷号	219 期号:2 页码:6
摘要	Herein, an alternative approach of selective-area zinc diffusion technique by single rapid thermal diffusion (RTD) using a Zn3P2/Zn/SiO2 multilayer structure is proposed to realize p-type doping in the InP cap so as to fabricate planar InGaAs/InP avalanche photodiodes (APDs). Through the optimization of selective-area zinc diffusion in the InP cap, a low dark current, high responsivity, fast transient response, and high reliability near-infrared back-illuminated planar InGaAs/InP APD is obtained, which demonstrates a simple and efficient method for the development of high-performance planar InGaAs/InP APD focal plane arrays.
DOI	10.1002/pssa.202100577
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收录类别	SCI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65507
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. R. Chen,Z. W. Zhang,G. Q. Miao,et al. Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process[J]. Physica Status Solidi a-Applications and Materials Science,2022,219(2):6.
APA	Y. R. Chen,Z. W. Zhang,G. Q. Miao,&H. Jiang and H. Song.(2022).Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process.Physica Status Solidi a-Applications and Materials Science,219(2),6.
MLA	Y. R. Chen,et al."Optimized Selective-Area p-Type Diffusion for the Back-Illuminated Planar InGaAs/InP Avalanche Photodiodes by a Single Diffusion Process".Physica Status Solidi a-Applications and Materials Science 219.2(2022):6.

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