The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates

doi:10.1016/j.matlet.2022.132125

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	The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates
	Y. R. Chen; Z. W. Zhang; G. Q. Miao; H. Jiang and H. Song
	2022
发表期刊	Materials Letters
ISSN	0167-577X
卷号	317 页码:4
摘要	The zinc diffusion technique has been developed as an efficient way to realize the p-type InP material for planar InP-based optoelectronic devices. Herein, Zn3P2-related zinc diffusion is carried out on semi-insulated InP substrates by rapid thermal annealing using a zinc film as the encapsulation. The effect of the zinc encapsulation on the p-type diffusion in InP has been investigated in detail. The effect includes both positive and negative aspects, and the related formation mechanism is also clarified.
DOI	10.1016/j.matlet.2022.132125
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收录类别	sci ; ei
语种	英语
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/66594
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. R. Chen,Z. W. Zhang,G. Q. Miao,et al. The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates[J]. Materials Letters,2022,317:4.
APA	Y. R. Chen,Z. W. Zhang,G. Q. Miao,&H. Jiang and H. Song.(2022).The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates.Materials Letters,317,4.
MLA	Y. R. Chen,et al."The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates".Materials Letters 317(2022):4.

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