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| A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes 期刊论文 Materials Letters, 2022, 卷号: 308, 期号: 4 作者: Y. R. Chen; Z. W. Zhang; G. Q. Miao; H. Jiang and H. Song 浏览  |  Adobe PDF(2114Kb)  |  收藏  |  浏览/下载:130/45  |  提交时间:2022/06/13 |
| High performance inorganic filterless narrowband photodetectors 期刊论文 Materials Letters, 2022, 卷号: 328, 页码: 3 作者: X. Y. Fan; Y. R. Chen; Z. W. Zhang; G. Q. Miao; H. Jiang and H. Song 浏览  |  Adobe PDF(1956Kb)  |  收藏  |  浏览/下载:62/27  |  提交时间:2023/06/14 |
| The effect of zinc encapsulation on the Zn3P2-related p-type diffusion in semi-insulated InP substrates 期刊论文 Materials Letters, 2022, 卷号: 317, 页码: 4 作者: Y. R. Chen; Z. W. Zhang; G. Q. Miao; H. Jiang and H. Song 浏览  |  Adobe PDF(3718Kb)  |  收藏  |  浏览/下载:51/29  |  提交时间:2023/06/14 |
| Epitaxial growth of polarization-graded AlGaN-based solar-blind ultraviolet photodetectors on pre-grown AlN templates 期刊论文 Materials Letters, 2020, 卷号: 281, 页码: 4 作者: Y. R. Chen,Z. W. Zhang,G. Q. Miao,H. Jiang,Z. M. Li and H. Song 浏览  |  Adobe PDF(1790Kb)  |  收藏  |  浏览/下载:93/29  |  提交时间:2021/07/06 |
| Influence of the growth temperature of AlN nucleation layer on AlN template grown by high-temperature MOCVD 期刊论文 Materials Letters, 2014, 卷号: 114, 期号: 26-28 作者: Chen Y. R.; Song H.; Li D. B.; Sun X. J.; Jiang H.; Li Z. M.; Miao G. Q.; Zhang Z. W.; Zhou Y. Adobe PDF(1931Kb)  |  收藏  |  浏览/下载:389/108  |  提交时间:2015/04/24 |
| TEM dislocations characterization of InxGa1-xAs/InP (100) (x=0.82) on mismatched InP substrate 期刊论文 Materials Letters, 2013, 期号: 106 作者: Zhao L.; Sun J. G.; Guo Z. X.; Miao G. Q. Adobe PDF(1109Kb)  |  收藏  |  浏览/下载:383/100  |  提交时间:2014/05/14 |