A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes

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	A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes
	Y. R. Chen; Z. W. Zhang; G. Q. Miao; H. Jiang and H. Song
	2022
发表期刊	Materials Letters
ISSN	0167-577X
卷号	308 期号:4
摘要	In this work, a planar In0.53Ga0.47As/InP avalanche photodiode (APD) working in both front- and back-illumination modes is fabricated for a comparative study. The great differences in the electrical and spectral performances between the two operating approaches can be originated from the PIN junction in the InP cap layer with high electric field, which plays the role of short-wavelength photoelectric conversion before the InP multiplication layer punches through under front-illumination.
DOI	10.1016/j.matlet.2021.131144
URL	查看原文
收录类别	SCI
引用统计
文献类型	期刊论文
条目标识符	http://ir.ciomp.ac.cn/handle/181722/65104
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y. R. Chen,Z. W. Zhang,G. Q. Miao,et al. A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes[J]. Materials Letters,2022,308(4).
APA	Y. R. Chen,Z. W. Zhang,G. Q. Miao,&H. Jiang and H. Song.(2022).A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes.Materials Letters,308(4).
MLA	Y. R. Chen,et al."A comparative study of front- and back-illuminated planar InGaAs/InP avalanche photodiodes".Materials Letters 308.4(2022).