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Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H-SiC 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 857, 期号: 13
作者:  J. H. Yin;  D. H. Chen;  H. Yang;  Y. Liu;  D. N. Talwar;  T. L. He;  I. T. Ferguson;  K. Y. He;  L. Y. Wan and Z. C. Feng
浏览  |  Adobe PDF(5258Kb)  |  收藏  |  浏览/下载：185/65  |  提交时间：2022/06/13
A high-response ultraviolet photodetector by integrating GaN nanoparticles with graphene 期刊论文
Journal of Alloys and Compounds, 2021, 卷号: 868
作者:  Y. Chen;  Y. Wu;  J. Ben;  K. Jiang;  Y. Jia;  S. Zhang;  H. Zang;  Z. Shi;  B. Duan;  X. Sun and D. Li
浏览  |  Adobe PDF(8619Kb)  |  收藏  |  浏览/下载：157/57  |  提交时间：2022/06/13
Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 814, 页码: 6
作者:  X. K. Liu, H. Y. Wang, H. C. Chiu, Y. X. Chen, D. B. Li, C. R. Huang, H. L. Kao, H. C. Kuo and S. W. H. Chen
浏览  |  Adobe PDF(2230Kb)  |  收藏  |  浏览/下载：170/75  |  提交时间：2021/07/06
Performance improvement of amorphous Ga 2 O 3 ultraviolet photodetector by annealing under oxygen atmosphere 期刊论文
Journal of Alloys and Compounds, 2020, 卷号: 840, 页码: 7
作者:  C. Q. Zhou,K. W. Liu,X. Chen,J. H. Feng,J. L. Yang,Z. Z. Zhang,L. Liu,Y. Xia and D. Z. Shen
浏览  |  Adobe PDF(1727Kb)  |  收藏  |  浏览/下载：157/59  |  提交时间：2021/07/06
Vertical GaN-on-GaN PIN diodes fabricated on free-standing GaN wafer using an ammonothermal method 期刊论文
Journal of Alloys and Compounds, 2019, 卷号: 804, 页码: 435-440
作者:  S.W.H.Chen;  H.Y.Wang;  C.Hu;  Y.Chen;  H.Wang;  J.L.Wang;  W.He
浏览  |  Adobe PDF(1456Kb)  |  收藏  |  浏览/下载：178/52  |  提交时间：2020/08/24
Free standing gallium nitride (GaN),GaN-On-GaN,Power PIN diode,p-n diodes,Chemistry  
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.;  Miao, G. Q.;  Song, H.
浏览  |  Adobe PDF(1681Kb)  |  收藏  |  浏览/下载：553/146  |  提交时间：2019/09/17
Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering  
Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method 期刊论文
Journal of Alloys and Compounds, 2010, 卷号: 506, 期号: 2, 页码: 530-532
作者:  Liu X.;  Jiang H.;  Miao G. Q.;  Song H.;  Cao L. Z.;  Li Z. M.;  Li D. B.
Adobe PDF(257Kb)  |  收藏  |  浏览/下载：417/33  |  提交时间：2012/10/21
Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique 期刊论文
Journal of Alloys and Compounds, 2009, 卷号: 472, 期号: 1—2, 页码: 587-590
作者:  Zhang T. M.;  Miao G. Q.;  Jin Y. X.;  Yu S. Z.;  Jiang H.;  Li Z. M.;  Song H.
Adobe PDF(619Kb)  |  收藏  |  浏览/下载：548/96  |  提交时间：2012/10/21
Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD 期刊论文
Journal of Alloys and Compounds, 2008, 卷号: 466, 期号: 1—2, 页码: 507-511
作者:  Yu S. Z.;  Miao G. Q.;  Xie J. C.;  Jin Y. X.;  Zhang T. M.;  Song H.;  Jiang H.;  Li Z. M.
Adobe PDF(593Kb)  |  收藏  |  浏览/下载：762/147  |  提交时间：2012/10/21
Effect of buffer growth temperature on crystalline quality and optical property of In0.82Ga0.18As/InP grown by LP-MOCVD 期刊论文
Journal of Alloys and Compounds, 2008, 卷号: 458, 期号: 1—2, 页码: 363-365
作者:  Zhang T.;  Miao G. Q.;  Jin Y. X.;  Jiang H.;  Li Z. M.;  Song H.
Adobe PDF(429Kb)  |  收藏  |  浏览/下载：643/163  |  提交时间：2012/10/21