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Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method
其他题名论文其他题名
Liu X.; Jiang H.; Miao G. Q.; Song H.; Cao L. Z.; Li Z. M.; Li D. B.
2010
发表期刊Journal of Alloys and Compounds
ISSN0925-8388
卷号506期号:2页码:530-532
摘要InAs0.6P0.4 epilayers grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) on InP (100) substrates were investigated. A two-step growth method, in which low-temperature (450 degrees C) InAs0.6P0.4 buffer layers were introduced into the structure, was employed to relax the mismatch between the InAs0.6P0.4 and InP substrate. The effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4 epilayer was studied by X-ray diffraction, scanning electron microscopy, Hall measurements, and photoluminescence spectrum. The characterization results showed that the growth temperature is an important factor for obtaining good quality and property of InAs0.6P0.4 epilayers and 530 degrees C is the optimum epilayer's growth temperature in our experimental conditions. (c) 2010 Elsevier B.V. All rights reserved.
收录类别SCI ; EI
语种英语
文献类型期刊论文
条目标识符http://ir.ciomp.ac.cn/handle/181722/26156
专题中科院长春光机所知识产出
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GB/T 7714
Liu X.,Jiang H.,Miao G. Q.,et al. Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method[J]. Journal of Alloys and Compounds,2010,506(2):530-532.
APA Liu X..,Jiang H..,Miao G. Q..,Song H..,Cao L. Z..,...&Li D. B..(2010).Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method.Journal of Alloys and Compounds,506(2),530-532.
MLA Liu X.,et al."Effect of epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by two-step growth method".Journal of Alloys and Compounds 506.2(2010):530-532.
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